SEARCH TERMS
Suggested Terms

Want to better focus your search?
Upgrade to a account to unlock 5 additional filters (including Entity Type), search inside of entities, and more!
Which are the top organizations worldwide?
Top organizations by Linknovate score
Petrochina
236.2 score | records 922
Chongqing University
157.4 score | records 346
Xi'an Jiaotong University
155.1 score | records 457
Where are the main hubs located?
What are the most relevant records?
Top records by Linknovate score

An object of the invention is a contacting arrangement of solid oxide cells, each solid oxide cell comprising at least two flow field plates (121) to arrange gas flows in the cell, and an active electrode structure (130), which comprises an anode side (100), a cathode side (102), and an electrolyte element (104) between the anode side and the cathode side. The contacting arrangement comprises gasket structure (128) to perform sealing functions in the solid oxide cell and a contact structure (132) locating between the flow field plates (121) and the active electrode structure (130), said contact structure being at least partly a gas permeable structure being adapted according to structures of the flow field plates (121) and according to structure of the active electrode structure (130).

Claims which contain your search:

1. Contacting arrangement of solid oxide cells, each solid oxide cell comprising at least two flow field plates (121) to arrange gas flows in the cell, and an active electrode structure (130), which comprises an anode side (100), a cathode side (102), and an electrolyte element (104) between the anode side and the cathode side, characterized in that the contacting arrangement comprises gasket structure (128) to perform sealing functions in the solid oxide cell and a contact structure (132) locating between the flow field plates (121) and the active electrode structure (130), said contact structure being at least partly a gas permeable structure being adapted according to structures of the flow field plates (121) and according to structure of the active electrode structure (130).

2. Contacting arrangement of solid oxide cells according to claim 1, characterized in that the contact structure (132) being adaptively gas permeable by at least one of form of the holes (134), size of the holes (134), distance between the holes (134), porosity of the structure (132) and tortuosity of the structure (132).

4. Contacting arrangement of solid oxide cells according to claim 1, characterized in that thickness of the contact structure (132) is being optimized according to at least one of heat transfer characteristics, electrical characteristics of the contacting arrangement and gas distribution characteristics.

7. Contacting method of solid oxide cells, in which method is arranged gas flows in the cell, characterized in that in the method: - is performed sealing functions in the solid oxide cell, and is established a contact structure between the gas flows in the cell and an active electrode structure, - and said contact structure (132) is at least partly adapted by a gas permeable structure according to the gas flows in the cell and according to structure of the active electrode structure (130).

8. Contacting method of solid oxide cells according to claim 7, characterized in that in the method is utilized a gas permeable structure of the contact structure (132) adaptively on the basis of at least one of form of the holes (134), size of the holes (134), distance between the holes (134), porosity of the structure (132) and tortuosity of the structure (132).

10. Contacting method of solid oxide cells according to claim 7, characterized in that in the method is optimized thickness of the contact structure (132) according to at least one of heat transfer characteristics, electrical characteristics of the contacting arrangement and gas distribution characteristics.

...

Patent
Primetals Technologies Austria GmbH | Date: 2017-03-01

The invention relates to a method for monitoring a pressurized gas-based cleaning process in a hose filter installation (2), in which method, during a cleaning process, a throughflow (Q) of a pressurized-gas flow during a predefinable time period (T) is determined, a throughflow characteristic (V) is determined using the determined throughflow (Q) of the pressurized-gas flow, and the pressurized gas-based cleaning process is monitored using the throughflow characteristic (V), wherein the throughflow characteristic (V) is a pressurized-gas quantity that has flowed in the predefinable time period (T). The invention also relates to a monitoring system (40) for a hose filter installation (2), having at least one throughflow sensor (44) for determining a throughflow (Q) of a pressurized-gas flow, and a control unit (42) for controlling a pressurized gas-based cleaning process, wherein the throughflow sensor (44) is a volume flow sensor or a mass flow sensor, and the control unit (42) is set up for carrying out the method according to one of the preceding claims.

...
Linknovate helps you find your next partner or supplier
"Linknovate brought us in just 2 weeks a supplier we searched for 3 months"
Thomas Lackner, Director of Open Innovation
Upload content to Linknovate to showcase your work
Join hundreds of start-ups, universities, research labs and corporations that use Linknovate to market their capabilities and connect with new clients and partners.
How does the expertise of two organizations compare?
Organizations compared on records for related keywords
What’s the commercial readiness level of this field?
Evolution of record type per year
What kind of sources are most common?
Weight of records per source
Name Score Publications Conferences Grants Patents Trademarks News Webs
242.7 10 10 10 10 10 10 10
236.2 10 10 10 10 10 10 10
157.4 10 10 10 10 10 10 10
155.1 10 10 10 10 10 10 10
148.9 10 10 10 10 10 10 10
121.8 10 10 10 10 10 10 10
121.6 10 10 10 10 10 10 10
119.2 10 10 10 10 10 10 10
117.8 10 10 10 10 10 10 10
114.2 10 10 10 10 10 10 10
95.4 10 10 10 10 10 10 10
87.7 10 10 10 10 10 10 10
86.6 10 10 10 10 10 10 10
78.2 10 10 10 10 10 10 10
76.3 10 10 10 10 10 10 10
72.1 10 10 10 10 10 10 10
67.5 10 10 10 10 10 10 10
66.8 10 10 10 10 10 10 10
66.3 10 10 10 10 10 10 10
61.7 10 10 10 10 10 10 10
61.7 10 10 10 10 10 10 10
60.6 10 10 10 10 10 10 10
60.0 10 10 10 10 10 10 10
59.5 10 10 10 10 10 10 10
56.0 10 10 10 10 10 10 10
55.9 10 10 10 10 10 10 10
53.2 10 10 10 10 10 10 10
52.9 10 10 10 10 10 10 10
50.8 10 10 10 10 10 10 10
48.9 10 10 10 10 10 10 10
48.7 10 10 10 10 10 10 10
48.7 10 10 10 10 10 10 10
47.2 10 10 10 10 10 10 10
46.3 10 10 10 10 10 10 10
45.2 10 10 10 10 10 10 10
44.7 10 10 10 10 10 10 10
43.6 10 10 10 10 10 10 10
42.4 10 10 10 10 10 10 10
39.7 10 10 10 10 10 10 10
39.5 10 10 10 10 10 10 10
39.3 10 10 10 10 10 10 10
38.2 10 10 10 10 10 10 10
38.1 10 10 10 10 10 10 10
37.9 10 10 10 10 10 10 10
37.0 10 10 10 10 10 10 10
33.7 10 10 10 10 10 10 10
33.6 10 10 10 10 10 10 10
33.3 10 10 10 10 10 10 10
33.2 10 10 10 10 10 10 10
31.9 10 10 10 10 10 10 10
31.8 10 10 10 10 10 10 10
31.2 10 10 10 10 10 10 10
30.7 10 10 10 10 10 10 10
30.2 10 10 10 10 10 10 10
29.8 10 10 10 10 10 10 10
29.4 10 10 10 10 10 10 10
29.3 10 10 10 10 10 10 10
29.1 10 10 10 10 10 10 10
28.5 10 10 10 10 10 10 10
28.4 10 10 10 10 10 10 10
Nanjing University of Technology
27.9 48 6 - 10 10 10 10
Pennsylvania State University
27.3 72 37 5 10 10 10 10
Tokyo Electric Power Company
26.8 38 1 - 10 10 10 10
Hanoi University of Science and Technology
26.4 25 2 - 10 10 10 10
Taiyuan University of Technology
26.1 54 9 - 10 10 10 10
Jiangsu University
25.6 90 16 - 10 10 10 10
Harbin Engineering University
25.5 70 35 - 10 10 10 10
Kyushu University
25.5 78 24 - 10 10 10 10
Samsung
25.5 28 4 - 10 10 10 10
National University of Defense Technology
25.4 54 3 - 10 10 10 10
Russian Academy of Sciences
25.3 143 20 - 10 10 10 10
Tongji University
24.6 71 17 - 10 10 10 10
Tohoku University
24.2 72 7 - 10 10 10 10
Inha University
24.2 62 5 - 10 10 10 10
Georgia Institute of Technology
24.0 51 16 2 10 10 10 10
University of Agriculture at Faisalabad
23.7 38 - - 10 10 10 10
Honeywell
23.4 1 7 - 10 10 10 10
University of Technology Malaysia
23.4 57 21 - 10 10 10 10
Toshiba Corporation
23.3 25 5 - 10 10 10 10
Wuhan University
23.2 111 19 - 10 10 10 10
Yonsei University
23.1 73 12 - 10 10 10 10
Texas A&M University
22.8 64 52 - 10 10 10 10
University of Texas at Austin
22.4 70 37 4 10 10 10 10
Nanjing University
22.2 49 4 - 10 10 10 10
Tokyo Institute of Technology
21.9 55 12 - 10 10 10 10
Massachusetts Institute of Technology
21.8 60 10 2 10 10 10 10
Wuhan University of Technology
21.4 41 17 - 10 10 10 10
Northeast Petroleum University
21.3 77 37 - 10 10 10 10
University of Tokyo
21.3 71 17 - 10 10 10 10
Beijing University of Chemical Technology
21.1 48 7 - 10 10 10 10
Central South University
21.0 61 17 - 10 10 10 10
Hunan University
20.9 42 8 - 10 10 10 10
University of Michigan
20.4 51 15 2 10 10 10 10
Amirkabir University of Technology
20.3 54 7 - 10 10 10 10
Gwangju Institute of Science and Technology
20.3 24 8 - 10 10 10 10
Pusan National University
20.1 54 6 - 10 10 10 10
University of Electronic Science and Technology of China
19.9 34 17 - 10 10 10 10
University of Seoul
19.9 35 4 - 10 10 10 10
Philips
19.9 3 1 - 10 10 10 10
BeaconMedaes LLC
19.8 - - - 10 10 10 10

An object of the invention is a contacting arrangement of solid oxide cells, each solid oxide cell comprising at least two flow field plates (121) to arrange gas flows in the cell, and an active electrode structure (130), which comprises an anode side (100), a cathode side (102), and an electrolyte element (104) between the anode side and the cathode side. The contacting arrangement comprises gasket structure (128) to perform sealing functions in the solid oxide cell and a contact structure (132) locating between the flow field plates (121) and the active electrode structure (130), said contact structure being at least partly a gas permeable structure being adapted according to structures of the flow field plates (121) and according to structure of the active electrode structure (130).

Claims which contain your search:

1. Contacting arrangement of solid oxide cells, each solid oxide cell comprising at least two flow field plates (121) to arrange gas flows in the cell, and an active electrode structure (130), which comprises an anode side (100), a cathode side (102), and an electrolyte element (104) between the anode side and the cathode side, characterized in that the contacting arrangement comprises gasket structure (128) to perform sealing functions in the solid oxide cell and a contact structure (132) locating between the flow field plates (121) and the active electrode structure (130), said contact structure being at least partly a gas permeable structure being adapted according to structures of the flow field plates (121) and according to structure of the active electrode structure (130).

2. Contacting arrangement of solid oxide cells according to claim 1, characterized in that the contact structure (132) being adaptively gas permeable by at least one of form of the holes (134), size of the holes (134), distance between the holes (134), porosity of the structure (132) and tortuosity of the structure (132).

4. Contacting arrangement of solid oxide cells according to claim 1, characterized in that thickness of the contact structure (132) is being optimized according to at least one of heat transfer characteristics, electrical characteristics of the contacting arrangement and gas distribution characteristics.

7. Contacting method of solid oxide cells, in which method is arranged gas flows in the cell, characterized in that in the method: - is performed sealing functions in the solid oxide cell, and is established a contact structure between the gas flows in the cell and an active electrode structure, - and said contact structure (132) is at least partly adapted by a gas permeable structure according to the gas flows in the cell and according to structure of the active electrode structure (130).

8. Contacting method of solid oxide cells according to claim 7, characterized in that in the method is utilized a gas permeable structure of the contact structure (132) adaptively on the basis of at least one of form of the holes (134), size of the holes (134), distance between the holes (134), porosity of the structure (132) and tortuosity of the structure (132).

10. Contacting method of solid oxide cells according to claim 7, characterized in that in the method is optimized thickness of the contact structure (132) according to at least one of heat transfer characteristics, electrical characteristics of the contacting arrangement and gas distribution characteristics.


Patent
Primetals Technologies Austria GmbH | Date: 2017-03-01

The invention relates to a method for monitoring a pressurized gas-based cleaning process in a hose filter installation (2), in which method, during a cleaning process, a throughflow (Q) of a pressurized-gas flow during a predefinable time period (T) is determined, a throughflow characteristic (V) is determined using the determined throughflow (Q) of the pressurized-gas flow, and the pressurized gas-based cleaning process is monitored using the throughflow characteristic (V), wherein the throughflow characteristic (V) is a pressurized-gas quantity that has flowed in the predefinable time period (T). The invention also relates to a monitoring system (40) for a hose filter installation (2), having at least one throughflow sensor (44) for determining a throughflow (Q) of a pressurized-gas flow, and a control unit (42) for controlling a pressurized gas-based cleaning process, wherein the throughflow sensor (44) is a volume flow sensor or a mass flow sensor, and the control unit (42) is set up for carrying out the method according to one of the preceding claims.


Patent
Cymer Inc | Date: 2017-04-24

A gas discharge light source includes a gas discharge system that includes one or more gas discharge chambers. Each of the gas discharge chambers in the gas discharge system is filled with a respective gas mixture. For each gas discharge chamber, a pulsed energy is supplied to the respective gas mixture by activating its associated energy source to thereby produce a pulsed amplified light beam from the gas discharge chamber. One or more properties of the gas discharge system are determined. A gas maintenance scheme is selected from among a plurality of possible schemes based on the determined one or more properties of the gas discharge system. The selected gas maintenance scheme is applied to the gas discharge system. A gas maintenance scheme includes one or more parameters related to adding one or more supplemental gas mixtures to the gas discharge chambers of the gas discharge system.

Claims which contain your search:

1. A method of operating a gas discharge light source comprising a gas discharge system that includes one or more gas discharge chambers, each gas discharge chamber housing an energy source, the method comprising: filling each of the gas discharge chambers in the gas discharge system with a respective gas mixture; for each gas discharge chamber, supplying a pulsed energy to the respective gas mixture by activating its energy source to thereby produce a pulsed amplified light beam from the gas discharge chamber; monitoring one or more operating characteristics of the gas discharge light source; determining whether any of the one or more monitored operating characteristics will be out of an acceptable range at a future time; and if it is determined that any of the one or more monitored operating characteristics would be out of an acceptable range at the future time, then selecting a restore gas maintenance scheme and applying the selected restore gas maintenance scheme to the gas discharge system by increasing a relative amount of a component gas in the gas mixture of at least one of the gas discharge chambers.

2. The method of claim 1, wherein the component gas includes a buffer gas.

3. The method of claim 1, wherein increasing a relative amount of the component gas in the gas mixture of at least one of the gas discharge chambers comprises applying a restore gas injection scheme to the at least one gas discharge chamber.

4. The method of claim 3, wherein applying the restore injection scheme comprises one or more of: increasing a temporal frequency at which an injection of the component gas is performed, and pumping more component gas into the gas mixture of the at least one gas discharge chamber than was pumped before it was determined that any of the one or more monitored operating characteristics will be out of an acceptable range.

5. The method of claim 1, wherein monitoring one or more operating characteristics of the gas discharge light source comprises monitoring one or more of: a pulsed energy that is supplied to the gas mixture of at least one of the gas discharge chambers; and an energy of the pulsed amplified light beam output from at least one of the gas discharge chambers.

6. The method of claim 5, wherein monitoring one or more operating characteristics comprises measuring one or more of the following characteristics of the gas discharge light source: a change in the pulsed energy supplied to the gas mixture of at least one of the gas discharge chambers over time; and a change in the energy of the pulsed amplified light beam output from at least one of the gas discharge chambers over time.

7. The method of claim 1, wherein: monitoring one or more operating characteristics of the gas discharge light source comprises calculating values of the operating characteristics, and determining whether any of the one or more monitored operating characteristics will be out of the acceptable range at a future time comprises determining whether any of the calculated values of the operating characteristics will be out of the acceptable range at a future time.

8. The method of claim 7, wherein calculating values of the operating characteristics comprises calculating average values of the operating characteristics.

9. The method of claim 1, wherein increasing a relative amount of the component gas in the gas mixture of at least one of the gas discharge chambers comprises applying a refill scheme to the at least one gas discharge chamber, the refill scheme comprising: purging the gas mixture from the at least one gas discharge chamber and filling the at least one gas discharge chamber with a fresh gas mixture that includes the component gas.

10. The method of claim 1, wherein determining whether any of the one or more monitored operating characteristics will be out of the acceptable range at a future time comprises determining whether any of the one or more monitored operating characteristics is likely to be out of the acceptable range at a future time.

11. The method of claim 1, wherein determining whether any of the one or more monitored operating characteristics will be out of the acceptable range at a future time comprises: determining a rate of change of each of the one or more monitored operating characteristics; and determining whether the rate of change for each of the one or more monitored operating characteristics indicates whether that monitored operating characteristic is likely to be out of the acceptable range at the future time.

12. The method of claim 1, further comprising determining whether any of the one or more monitored operating characteristics will be out of another acceptable range at a future time, and if it is determined that any of the one or more monitored operating characteristics will be out of the other acceptable range at a future time, then applying a refill scheme to at least one gas discharge chamber, the refill scheme comprising: purging the gas mixture from the at least one of the gas discharge chambers, and filling the purged gas discharge chamber with fresh gas mixture that includes the component gas.

13. The method of claim 1, wherein the one or more operating characteristics of the gas discharge light source are monitored while the pulsed amplified light beam is produced.

14. The method of claim 1, wherein the gas discharge system comprises a first gas discharge chamber housing a first energy source and a second gas discharge chamber housing a second energy source.

15. The method of claim 14, wherein filling each of the gas discharge chambers with a respective gas mixture comprises filling the first gas discharge chamber with a first gas mixture and filling the second gas discharge chamber with a second gas mixture.

16. The method of claim 14, wherein applying the selected restore gas maintenance scheme to the gas discharge system comprises increasing a relative amount of a component gas in a first gas mixture of the first gas discharge chamber and increasing a relative amount of a component gas in a second gas mixture of the second gas discharge chamber.

17. The method of claim 1, wherein filling a gas discharge chamber with the respective gas mixture comprises filling the gas discharge chamber with a mixture of a gain medium and a buffer gas.

18. The method of claim 17, wherein filling a gas discharge chamber with the mixture of the gain medium and the buffer gas comprises filling the gas discharge chamber with a gain medium that includes a noble gas and a halogen, and a buffer gas that includes an inert gas.

19. The method of claim 18, wherein the inert gas includes helium or neon and the component gas includes the inert gas.

20. A gas discharge light source comprising: a gas discharge system that includes one or more gas discharge chambers, each gas discharge chamber housing an energy source and containing a gas mixture that includes a gain medium; and a gas maintenance system comprising:a gas supply system;a monitoring system; anda control system coupled to the gas supply system and to the monitoring system, and configured to: wherein the restore gas maintenance scheme increases a relative amount of a component gas in the gas mixture of at least one of the gas discharge chambers.

21. The light source of claim 20, wherein the component gas includes a buffer gas and the gas mixture contained within the gas discharge chamber also includes a buffer gas.

22. The light source of claim 21, wherein: the gain medium includes a noble gas and a halogen; the buffer gas includes an inert gas; and the inert gas of the component gas includes an inert gas.

23. The light source of claim 20, wherein the gas discharge system includes a master oscillator having a master oscillator gas discharge chamber providing a seed light beam, and a power amplifier having a power amplifier gas discharge chamber that receives the seed light beam, wherein the one or more gas discharge chambers include the master oscillator gas discharge chamber and the power amplifier gas discharge chamber.

24. The light source of claim 20, wherein the gas supply system includes one or more gas sources and a valve system fluidly connected to both the one or more gas sources and the one or more gas discharge chambers.

25. The light source of claim 24, wherein the one or more gas sources include: a tri-mix gas source including three gases, wherein the three gases include one or more of: halogen fluorine, a noble gas, and a rare gas; and a bi-mix gas source including two gases, wherein the two gases include one or more of a noble gas and another gas and lack any fluorine.


A system for metering gas includes a housing configured to allow a flow of the gas between an input port and an output port. Further, the system includes a flow manager disposed in the housing and configured to modify at least one physical characteristic of the flow of the gas in the housing. Furthermore, the system includes a flow sensor disposed in the housing and configured to generate an electrical signal in response to flow characteristics of the gas in the housing. Moreover, the system also includes a processor configured to determine at least one flow parameter of the gas based on an amplitude characteristic of the electrical signal, a temporal characteristic of the electrical signal, or both the amplitude characteristic and the temporal characteristic of the electrical signal. A method for metering the gas is also presented.

Claims which contain your search:

1. A system for metering gas, comprising: a housing comprising an input port and an output port, wherein the housing is configured to allow a flow of the gas between the input port and the output port; a flow manager disposed in the housing and configured to modify at least one physical characteristic of the flow of the gas in the housing; a flow sensor disposed in the housing and configured to generate an electrical signal in response to a flow characteristic of the gas in the housing; and a processor operatively coupled to the flow manager and the flow sensor and configured to determine at least one flow parameter of the gas based on an amplitude characteristic of the electrical signal, a temporal characteristic of the electrical signal, or both the amplitude characteristic and the temporal characteristic of the electrical signal.

8. The system of claim 1, wherein the at least one flow parameter comprises a mass flow rate of the gas, an accumulated volume of the gas, a volumetric flow rate of the gas, a cumulative gas volume per a determined time unit, or combinations thereof.

9. The system of claim 1, wherein in a first flow regime, the processor is configured to determine the at least one flow parameter based on the amplitude characteristic of the electrical signal, and in a second flow regime, the processor is configured to determine the at least one flow parameter based on the temporal characteristic of the electrical signal.

10. The system of claim 9, wherein the first flow regime comprises a range of flow rates of the gas in the housing that impedes application of disturbances to the flow of the gas.

11. The system of claim 9, wherein the second flow regime comprises a range of flow rates of the gas in the housing that allows disturbances to be imparted to the flow of the gas.

12. The system of claim 9, wherein the processor is further configured to determine a calibration function based on a third flow regime, wherein the third flow regime comprises an overlap region of the first flow regime and the second flow regime, and wherein, in the first flow regime, the calibration function is indicative of a relationship at least between a volumetric flow rate of the gas and a mass flow rate of the gas.

13. The system of claim 1, further comprising a third flow disrupter disposed in the housing and configured to impart disturbances to the flow of the gas in the housing.

14. The system of claim 1, further comprising a gas analyzer disposed in the housing and configured to determine one or more non-flow rate characteristics of the gas, wherein the one or more non-flow rate characteristics of the gas comprise a gas density, a gas temperature, a gas pressure, a gas mixture, an energy content of the gas, or combinations thereof.

15. The system of claim 14, wherein the gas analyzer comprises a fourth flow disrupter configured to aid in the determination of the one or more non-flow rate characteristics of the gas.

19. A method for metering gas, comprising: modifying at least one physical characteristic of a flow of the gas in a housing; generating an electrical signal in response to a flow characteristic of the gas in the housing; and determining at least one flow parameter of the gas based on an amplitude characteristic of the electrical signal, a temporal characteristic of the electrical signal, or both the amplitude characteristic and the temporal characteristic of the electrical signal.

20. The method of claim 19, further comprising determining non-flow rate characteristics of the gas, a tampering of a system, a gas leakage from the system, and one or more environmental conditions.

22. The method of claim 19, further comprising: determining, in a first flow regime, the at least one flow parameter based on the amplitude characteristic of the electrical signal; and determining, in a second flow regime, the at least one flow parameter based on the temporal characteristic of the electrical signal.

23. The method of claim 22, further comprising determining a calibration function based on a third flow regime, wherein the third flow regime comprises an overlap region of the first flow regime and the second flow regime, and wherein the calibration function is indicative of a relationship at least between a volumetric flow rate of the gas and a mass flow rate of the gas in the first flow regime.


Patent
Electro Scientific Industries Inc. | Date: 2016-08-10

Employing laser scanning directions (20) that are oblique to and against a predominant gas flow direction (25) equalize the quality and waviness characteristics of orthogonal scribe lines (26) made by the laser scans. Positioning and sequence of multiple scan passes to form a feature wider than the width of a scribe line (26) can be controlled to enhance quality and waviness characteristics of the edges of the feature.

Claims which contain your search:

1. A method for enhancing an edge characteristic of a laser-induced material effect resulting from transverse laser scans across a workpiece, comprising: relatively orienting a laser processing field and the workpiece at a processing station of a laser processing system; establishing, from a gas supply, a gas input flow in a gas input direction across at least a portion of a major surface of the workpiece, wherein gas in the gas input flow has a positive gas input velocity in the gas input direction; establishing, from a vacuum source, a gas outtake flow in a gas outtake direction across at least the portion of the major surface of the workpiece, wherein the gas input flow and the gas outtake flow establish a predominant gas flow direction across at least the portion of the major surface of the workpiece, and wherein the gas input flow and the gas outtake flow cooperate to provide cumulative gas flow characteristics across at least the portion of the major surface of the workpiece; while maintaining the gas input flow and the gas outtake flow, scanning a laser beam in a first laser scan direction of relative movement of a laser beam processing axis of the laser beam with respect to the workpiece, wherein the laser beam impinges the workpiece along the first laser scan direction affecting the material along the first laser scan direction that is obliquely oriented opposite to the predominant gas flow direction; and while maintaining the gas input flow and the gas outtake flow, scanning the same laser beam or a different laser beam in a second laser scan direction of relative movement of a respective laser beam processing axis with respect to the workpiece, wherein the laser beam impinges the workpiece along the second laser scan direction affecting the material along the second laser scan direction that is obliquely oriented opposite to the predominant gas flow direction, wherein the second laser scan direction is transverse to the first laser scan direction.

3. The method of claim 1, wherein the first scan direction is at a 1355.125 angle with respect to the predominant gas flow direction.

4. The method of claim 3, wherein the second scan direction is at a 2255.125 angle with respect to the predominant gas flow direction.

5. The method of claim 1, wherein the predominant gas flow direction remains generally the same during scans along the first laser scan direction and the second laser scan direction.

9. The method of claim 1, wherein the cumulative gas flow along the predominant gas flow direction is continuous during and between the step of scanning a laser beam in a first laser scan direction of relative movement and the step of scanning the same laser beam or a different laser beam in a second laser scan direction.

10. The method of claim 1, wherein the laser beam processing axis moves within a scan field, wherein the scan field includes a laser processing field that is smaller than or equal in area to the scan field, wherein the cumulative gas flow along the predominant gas flow direction is maximized with respect to flow dynamics encompassing the processing field, and wherein a velocity of scanning the laser beam in the first scan direction is maximized with respect to a parameter recipe that achieves desirable quality of the laser induced effect.

13. The method of claim 1, wherein the laser beam processing axis moves within a scan field, wherein the scan field includes a laser processing field that is smaller than or equal in area to the scan field, wherein the processing field has a major axis dimension of a major axis that bisects the processing field, wherein the gas input direction is generally perpendicular to the major axis of the processing field, wherein a gas flow volume traveling along the gas input direction has a flow width dimension that is perpendicular to the gas input direction, and wherein the flow width dimension is greater than the major axis dimension.

15. The method of claim 1, wherein the laser beam processing axis moves within a scan field, wherein the step of scanning a laser beam in a first laser scan direction of relative movement and the step of scanning the same laser beam or a different laser beam in a second laser scan direction are each performed over multiple neighboring scan fields over the workpiece while maintaining the predominant gas flow direction of the gas input flow and the gas outtake flow.

16. The method of claim 1, wherein laser beam impingement of the workpiece creates one or more localized adverse gas characteristics that could interfere with the capability of the laser beam to impinge the workpiece accurately with respect to a directed position of the laser beam processing axis along the first laser scan direction and could cause fluctuation of the edge characteristic of the laser-induced material effect, and wherein the first ands second laser scan directions with respect to the predominant gas flow direction inhibit the one or more localized adverse gas characteristics.

18. The method of claim 1, wherein the workpiece includes one or more features having a feature orientation, wherein the processing station has a first processing station orientation with a first processing station axis and a second processing station axis that is orthogonal to the first processing station axis, wherein the laser beam processing axis moves within a scan field having a scan field orientation with a first scan field axis and a second scan field axis that is orthogonal to the first scan field axis, and wherein the feature orientation is oriented with respect to the processing station orientation or the scan field orientation, wherein the second scan direction is orthogonal to the first scan direction, wherein the first scan direction is at a 13511.25 angle with respect to the predominant gas flow direction, wherein the second scan direction is at a 22511.25 angle with respect to the predominant gas flow direction, wherein the predominant gas flow direction remains generally the same during scans along the first laser scan direction and the second laser scan direction, wherein the step of scanning the laser beam in the first laser scan direction of relative movement comprises scanning the laser beam along multiple parallel scan paths in the first laser scan direction before the step of scanning the same laser beam or a different laser beam in a second laser scan direction of relative movement, wherein the laser beam processing axis is provided with continuous motion during and between the steps of scanning a laser beam in a first laser scan direction of relative movement and scanning the same laser beam or a different laser beam in a second laser scan direction, wherein the laser-induced material effect forms a first scan feature along the first laser scan direction, wherein the first scan feature has opposing first primary and first secondary edges, wherein the laser-induced material effect forms a second scan feature along the second laser scan direction, wherein the second scan feature has opposing second primary and second secondary edges, wherein each of the edges can be expressed as a respective average straight fit line, wherein horizontal peaks and valleys of each edge can be expressed as absolute values with respect to the respective average straight fit line, and wherein a standard deviation of the absolute values of each edge to its respective average straight fit line is less than 0.3 microns.

19. A laser processing system for processing a workpiece having a major surface and one or more features formed on the major surface, wherein the major surface has a surface area, and wherein the laser processing system provides a processing field having a processing field orientation with a first processing field axis and a second processing field axis that is orthogonal to the first processing field axis, comprising: a processing station having a processing station orientation with a first processing station axis and a second processing station axis that is orthogonal to the first processing station axis; a chuck adapted for placing the workpiece in the processing station at which the workpiece is positionable so that at least one of the features is oriented with respect to the processing station orientation or the processing field orientation; a laser adapted for generating a laser beam; a beam positioning system including one or more stages for supporting the chuck or the workpiece, the beam positioning system also including a fast-positioner having a scan field that is smaller than the workpiece, wherein the laser processing field is within the scan field such that the laser processing field is smaller than or equal in area to the scan field, wherein the beam positioning system is adapted for positioning the processing field in multiple neighboring locations over the workpiece, and wherein the beam positioning system is adapted for scanning the laser beam along a laser beam processing axis to impinge the workpiece; a gas flow assembly that includes a gas input flow device adapted for establishing a gas input flow having a positive gas input velocity in a gas input direction across at least the processing field located over a portion of the major surface of the workpiece, wherein the gas flow assembly also includes a gas outtake port adapted for establishing a gas outtake flow in a gas outtake direction across at least the processing field located over the portion of the major surface of the workpiece, wherein the gas input flow and the gas outtake flow are adapted to establish a predominant gas flow direction across at least the processing field located over the portion of the major surface of the workpiece, and wherein the gas input flow and the gas outtake flow are adapted to cooperate to provide cumulative gas flow characteristics across at least the processing field located over the portion of the major surface of the workpiece; and a controller adapted to control, within the processing field and while maintaining the gas input flow and the gas outtake flow, scanning the laser beam in a first laser scan direction of relative movement of a laser beam processing axis of the laser beam with respect to the workpiece, such that the first laser scan direction is obliquely oriented opposite to the predominant gas flow direction and such that the laser beam impinges the workpiece along the first laser scan direction affecting the material along the first laser scan direction, wherein the controller is also adapted to control, within the processing field and while maintaining the gas input flow and the gas outtake flow, scanning the same laser beam or a different laser beam in a second laser scan direction of relative movement of a respective laser beam processing axis with respect to the workpiece, such that the second laser scan direction is obliquely oriented opposite to the predominant gas flow direction and such that the laser beam impinges the workpiece along the second laser scan direction affecting the material along the second laser scan direction, and wherein the second laser scan direction is transverse to the first laser scan direction.

20. A method for enhancing an edge characteristic of a laser-induced material effect resulting from transverse laser scans across a workpiece, comprising: relatively orienting a laser processing field and the workpiece at a processing station of a laser processing system; establishing, from a gas supply, a gas input flow in a gas input direction across at least a portion of a major surface of the workpiece, wherein gas in the gas input flow has a positive gas input velocity in the gas input direction; establishing, from a vacuum source, a gas outtake flow in a gas outtake direction across at least the portion of the major surface of the workpiece, wherein the gas input flow and the gas outtake flow establish a predominant gas flow direction across at least the portion of the major surface of the workpiece, and wherein the gas input flow and the gas outtake flow cooperate to provide a cumulative gas flow having a gas flow velocity across at least the portion of the workpiece; while maintaining the gas input flow and the gas outtake flow, scanning a laser beam in a first laser scan direction of relative movement of a laser beam processing axis of the laser beam with respect to the workpiece, wherein the laser beam impinges the workpiece along the first laser scan direction affecting the material along the first laser scan direction and creating one or more localized adverse gas characteristics that could interfere with the capability of the laser beam to impinge the workpiece accurately with respect to a directed position of the laser beam processing axis along the first laser scan direction and could cause fluctuation of the edge characteristic of the laser-induced material effect, wherein the first laser scan direction is transverse to the predominant gas flow direction, wherein the first laser scan direction includes a first laser scan direction component that is parallel with and opposite to the predominant gas flow direction, and wherein the first laser scan direction with respect to the predominant gas flow direction inhibits the one or more localized adverse gas characteristics; and while maintaining the gas input flow and the gas outtake flow, scanning the same laser beam or a different laser beam in a second laser scan direction of relative movement of a respective laser beam processing axis with respect to the workpiece, wherein the laser beam impinges the workpiece along the second laser scan direction affecting the material along the second laser scan direction and creating one or more localized adverse gas characteristics that could interfere with the capability of the laser beam to impinge the workpiece accurately with respect to a directed position of the laser beam processing axis along the second laser scan direction and could cause fluctuation of the edge characteristic of the laser-induced material effect, wherein the second laser scan direction is transverse to the first laser scan direction, wherein the second laser scan direction is transverse to the predominant gas flow direction, wherein the second laser scan direction includes a second laser scan direction component that is parallel with and opposite to the predominant gas flow direction, and wherein the second laser scan direction with respect to the predominant gas flow direction inhibits the one or more localized adverse gas characteristics.


A contacting arrangement of solid oxide cells is disclosed, each solid oxide cell having at least two flow field plates to arrange gas flows in the cell, and an active electrode structure, which has an anode side, a cathode side, and an electrolyte element between the anode side and the cathode side. The contacting arrangement includes a gasket structure to perform sealing functions in the solid oxide cell and a contact structure located between the flow field plates and the active electrode structure, the contact structure being at least partly a gas permeable structure configured and adapted according to structures of the flow field plates and according to the active electrode structure.

Claims which contain your search:

1. A contacting arrangement of solid oxide cells, each solid oxide cell having at least two flow field plates to arrange gas flows in the cell, and an active electrode structure, which includes a fuel side, an oxygen side, and an electrolyte element between the fuel side and the oxygen side, wherein the contacting arrangement comprises: a gasket structure to perform sealing functions in a solid oxide cell; a contact structure configured for placement between flow field plates and an oxygen side of an active electrode structure, the contact structure being made of perforated metal which is protectively coated with oxide structures, said contact structure being at least partly a gas permeable structure having perforated holes, the contact structure being configured and adapted according to structures of the flow field plates and according to structures of the oxygen side, and a thickness of the gasket structure configured and adapted according to a thickness of the contact structure allowing tolerance variations to a thickness of solid oxide cells; and means for enhancing at least one of electric conductivity, heat transfer characteristics and mechanical support of the contact structure by selection of a distance between two adjacent holes and by minimizing a size of the holes in perforation of the contact structure.

2. The contacting arrangement of solid oxide cells according to claim 1, wherein the contact structure is adaptively gas permeable by at least one of: form of the holes, size of the holes, distance between the holes, porosity of the contact structure and tortuosity of the contact structure.

3. The contacting arrangement of solid oxide cells according to claim 1, wherein the thickness of the contact structure is optimized according to at least one of: heat transfer characteristics, electrical characteristics of the contacting arrangement and gas distribution characteristics.

4. A contacting method for solid oxide cells in which gas flows, the method comprising: sealing a solid oxide cell by a gasket structure, and locating a contact structure between flow field plates and an oxygen side of an active electrode structure, the contact structure being made of perforated metal, which is protectively coated with oxide structures; configuring and adapting said contact structure at least partly by a gas permeable structure having perforated holes according to the gas flows in the cell and according to structures of the oxygen side; configuring and adapting a thickness of the gasket structure according to a thickness of the contact structure allowing tolerance variations to thickness of solid oxide cells; and enhancing at least one of electric conductivity, heat transfer characteristics and mechanical support of the contact structure by selecting a distance between two adjacent holes and by minimizing size of the holes during a perforation of the contact structure.

5. The contacting method for solid oxide cells according to claim 7, comprising: using a gas permeable structure of the contact structure adaptively based on the at least one of form of the holes, size of the holes, distance between the holes, porosity of the structure and tortuosity of the structure.

6. The contacting method for solid oxide cells according to claim 7, comprising: optimizing the thickness of the contact structure according to at least one of heat transfer characteristics, electrical characteristics of the contacting arrangement and gas distribution characteristics.

7. The contacting arrangement according to claim 1, in combination with at least two solid oxide cells, each solid oxide cell comprising: at least two flow field plates to arrange gas flows in the cell, and an active electrode structure, which includes a fuel side, an oxygen side, and an electrolyte element between the fuel side and the oxygen side.


Patent
Toshiba Corporation | Date: 2016-02-05

In one embodiment, a semiconductor manufacturing system includes a processing apparatus configured to process a wafer, an exhaust pump configured to discharge an exhaust gas from the processing apparatus, and a measurement module configured to measure a value that indicates operation of the exhaust pump. The system further includes a controller configured to feed a first gas for pushing out a fragment of a product that is generated by the exhaust gas and is attached to or flows into the exhaust pump, a second gas for cooling the exhaust pump, a third gas for changing characteristics of the product attached to the exhaust pump, or a fourth gas to react with the product attached to the exhaust pump, into the exhaust pump based on the value measured by the measurement module.

Claims which contain your search:

1. A semiconductor manufacturing system comprising: a processing apparatus configured to process a wafer; an exhaust pump configured to discharge an exhaust gas from the processing apparatus; a measurement module configured to measure a value that indicates operation of the exhaust pump; and a controller configured to feed a first gas for pushing out a fragment of a product that is generated by the exhaust gas and is attached to or flows into the exhaust pump, a second gas for cooling the exhaust pump, a third gas for changing characteristics of the product attached to the exhaust pump, or a fourth gas to react with the product attached to the exhaust pump, into the exhaust pump based on the value measured by the measurement module.

3. The system of claim 2, wherein the first gas causes the fragment to scrape off the product attached to the inner face of the first portion or the outer face of the second portion.

4. The system of claim 2, wherein the second gas cools the exhaust pump to bring the product attached to the inner face of the first portion and the product attached to the outer face of the second portion into contact with each other.

5. The system of claim 2, wherein the third gas changes the characteristics of the product attached to the inner face of the first portion or the outer face of the second portion.

6. The system of claim 2, wherein the fourth gas reacts with the product attached to the inner face of the first portion or the outer face of the second portion.

7. The system of claim 1, wherein the first gas is a nitrogen gas.

8. The system of claim 1, wherein the second gas is an argon gas.

9. The system of claim 1, wherein the third gas is a gas including moisture.

10. The system of claim 1, wherein the fourth gas is a hydrofluoric acid gas.

12. The system of claim 1, wherein the controller feeds the first, second, third or fourth gas into the exhaust pump during the operation of the exhaust pump.

14. The system of claim 1, wherein the first, second, third or fourth gas is fed to a feeding port provided on a flow path between the processing apparatus and the exhaust pump, or to a feeding port provided between an inlet and an outlet of the exhaust pump.

15. The system of claim 1, further comprising: one or more gas feeders configured to feed the first, second, third or fourth gas; and one or more flow rate adjustment modules configured to adjust a flow rate of the first, second, third or fourth gas.

16. A method of operating a semiconductor manufacturing system, comprising: processing a wafer by a processing apparatus; discharging an exhaust gas from the processing apparatus by an exhaust pump; measuring, by a measurement module, a value that indicates operation of the exhaust pump; and feeding a first gas for pushing out a fragment of a product that is generated by the exhaust gas and is attached to or flows into the exhaust pump, a second gas for cooling the exhaust pump, a third gas for changing characteristics of the product attached to the exhaust pump, or a fourth gas to react with the product attached to the exhaust pump, into the exhaust pump based on the value measured by the measurement module.

18. The method of claim 16, wherein the first, second, third or fourth gas is fed into the exhaust pump during the operation of the exhaust pump.


Patent
Fisher & Paykel Healthcare Ltd | Date: 2015-05-01

A humidification arrangement can be configured to have multiple compartments with each compartment having at least one moisture source and at least one heater. The compartments can be thermally isolated and can be controlled such that the moisture output of both the first and second compartments is set to a function of the same set of input signals.

Claims which contain your search:

32. A multiple stage respiratory gases conditioning system comprising the arrangement of claim 1, wherein the controller is adapted to: receive data from the sensor; determine a control strategy as a function of the data received from the sensor and a target gas characteristic or substance being delivered by the system; and control a level of the gas characteristic or substance generated by each of the multiple stages based upon the determined control strategy.

1. A humidification arrangement comprising: a gas passageway extending between a first location and a second location, the gas passageway comprising a first compartment and a second compartment, each compartment comprising a moisture source configured to add moisture to gases in the gas passageway, each moisture source having an adjustable moisture output; a sensor adapted to sense one or more characteristic or substance of a gases flow; and a controller adapted to use data from the sensor to control the adjustable moisture output of at least one of the first compartment and the second compartment to deliver a target gas characteristic or substance, wherein the controller is adapted to control an actuator that varies an exposed surface area of a reservoir.

39. The multiple stage respiratory gases conditioning system of claim 32, wherein the controller is further adapted to determine a control strategy based upon a target gas characteristic or substance specific to a stage of the multiple stages.

40. The multiple stage respiratory gases conditioning system of claim 32, wherein the controller is further adapted to use a stage target that represents a desired amount to increase the gas characteristic or substance for the gases flowing through that stage.

41. The multiple stage respiratory gases conditioning system of claim 32, wherein the controller is further adapted to use a target gas characteristic or substance that is a target temperature level or a target humidity level.

11. The humidification arrangement of claim 1, wherein the first compartment and the second compartment are arranged in series along the gas passageway.

12. The humidification arrangement of claim 1, wherein the gas passageway comprises a tube that connects the first compartment to the second compartment and wherein the tube connects an outlet of the first compartment to an inlet of the second compartment.

15. The humidification arrangement of claim 1, wherein the gas passageway comprises one or more valves that direct flow through the humidification arrangement.

24. The humidification arrangement of claim 1, wherein the target gas characteristic or substance is a temperature level or a humidity level.


Patent
Lockheed Martin | Date: 2017-01-27

A gas barrier material includes an atomic sheet, such as graphene and/or an analog of graphene. The gas barrier material can be arranged as part of a component, such as a container or other vessel, to limit the flow or permeation of gas through the component. Where the component is a container or part of a container, the gas barrier material may be formulated and arranged to limit or prevent gas ingress or egress with respect to the internal volume of the container. The atomic sheet offers improved gas barrier properties compared to traditional polymeric barrier materials and is particularly useful in applications where it is desired to limit permeation of small gas molecules such as helium, such as airships or other lighter than air vehicles.

Claims which contain your search:

1. A gas barrier material, comprising: a sheet of material having a characteristic gas permeability; and one or more atomic sheets arranged along the sheet of material so that the gas barrier material has a gas permeability less than the characteristic gas permeability of the sheet of material at locations along the gas barrier material where the one or more atomic sheets are present, wherein the one or more atomic sheets comprises graphene that is at least partially fluorinated or carbon nitride.

2. The gas barrier material of claim 1, wherein the one or more atomic sheets comprises graphene.

3. The gas barrier material of claim 1, wherein the one or more atomic sheets comprises functionalized graphene.

4. The gas barrier material of claim 1, wherein the one or more atomic sheets comprises carbon nitride.

5. The gas barrier material of claim 1, wherein the one or more atomic sheets comprises at least one atomic sheet intercalated in the sheet of material.

6. The gas barrier material of claim 1, wherein the one or more atomic sheets includes a plurality of at least partially overlapping atomic sheets.

7. The gas barrier material of claim 6, wherein the plurality of atomic sheets is in the form of flakes.

8. The gas barrier material of claim 1, wherein the one or more atomic sheets are arranged along the sheet of material as a coextensive layer.

9. A container having an internal volume of, the container comprising: a panel in contact with the internal volume, the panel comprising a sheet of material having a characteristic gas permeability; and one or more atomic sheets located along the panel so that the panel has a gas permeability less than the characteristic gas permeability of the sheet of material at the location of the atomic sheets, wherein the one or more atomic sheets comprises graphene that is at least partially fluorinated or carbon nitride.

18. The method of claim 16, wherein the gas comprises helium.


Patent
Knauf Insulation Sprl and Knauf Insulation Inc. | Date: 2017-02-17

A mineral wool insulating product having improved off gassing characteristics is particularly adapted for high temperature applications.