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Bai Y.,CAS Institute of Microelectronics | Shen H.,CAS Institute of Microelectronics | Li C.,ZhuZhou CRRC Times Electrical CO. | Tang Y.,CAS Institute of Microelectronics | Liu X.,CAS Institute of Microelectronics
Materials Science Forum | Year: 2016

The n-p-i-n AlGaN solar-blind ultraviolet double heterojunction phototransistor (DHPT) with internal gain is proposed and optimized in this paper. The dependences of spectral responsivity and quantum gain on structure parameters of the AlGaN DHPT are simulated in detail. Then, the polarization effect of AlGaN heterojunction on the performance of AlGaN DHPT is also investigated. Results show that positive polarization charge would enhance the photoresponse of the device, whereas the negative polarization charge would reduce the photoresponse significantly. The reasons for the polarization effect on performance of AlGaN DHPT are discussed. © 2016 Trans Tech Publications, Switzerland. Source


Bai Y.,CAS Institute of Microelectronics | Li C.Z.,ZhuZhou CRRC Times Electrical CO. | Shen H.J.,CAS Institute of Microelectronics | Tang Y.D.,CAS Institute of Microelectronics | Liu X.Y.,CAS Institute of Microelectronics
Materials Science Forum | Year: 2016

The 4H-SiC n-p-n BJT for ultraviolet detection with high optical gain is proposed and optimized in this paper. The effect of structural parameters of 4H-SiC phototransistor on the performance of the detectors is simulated and the effect mechanism is analyzed. The simulation results show that the 4H-SiC phototransistors detect UV light with a response wavelength below 380 nm. It is suggested that the base parameters are important to the responsivity of the 4H-SiC BJT. With optimized parameters the 4H-SiC UV phototransistor exhibits peak responsivity as high as 4617 A/W corresponding to a quantum gain of 2.2×105 under the bias voltage of 5 V. © 2016 Trans Tech Publications, Switzerland. Source


Wei J.,Hong Kong University of Science and Technology | Jiang H.,Dynex Semiconductor | Jiang Q.,ZhuZhou CRRC Times Electrical CO. | Chen K.J.,Hong Kong University of Science and Technology
IEEE Transactions on Electron Devices | Year: 2016

A GaN/SiC hybrid field-effect transistor (HyFET) is proposed as a high-voltage power device that provides a high-mobility lateral AlGaN/GaN channel to reduce the channel resistance and a vertical SiC drift region to sustain the high OFF-state voltage. The performance of the HyFET is evaluated by numerical device simulations. Compared with the conventional SiC MOSFET, the HyFET exhibits a greatly reduced $R-{\mathrm{\scriptscriptstyle ON}}$ together with a low $C-{\mathrm{ GD}}$ and low gate charges. The figures of merit $Q-{\mathrm{ G}}\times R-{\mathrm{\scriptscriptstyle ON}}$ and $Q-{\mathrm{ GD}}\times R-{\mathrm{\scriptscriptstyle ON}}$ of the HyFET are dramatically improved. © 1963-2012 IEEE. Source


Sun Q.,Northeastern University China | Huang B.,Northeastern University China | Li D.,ZhuZhou CRRC Times Electrical CO. | Ma D.,Northeastern University China | Zhang Y.,Northeastern University China
IEEE Transactions on Industrial Informatics | Year: 2016

As system transient stability is one of the most important criterions of microgrid (MG) security operation, and the performance of an MG strongly depends on the placement of its energy storage devices (ESDs); optimal placement of ESDs for improving system transient stability is required for MGs. An MG structure preserving energy function is first developed for voltage source inverter-based MGs since the existing energy functions, based on synchronous generators and the conventional power system, are not applicable for MGs. The concept of internal potential energy of distributed energy resource is presented instead of the kinetic energy term in traditional energy function. Then, a novel approach for the optimal placement of ESDs is proposed based on MG structure preserving energy function for improving MG transient stability. Simulation and experimental results show that the proposed method can be used to find the optimal placement of ESDs and improve the system stability effectively. © 2016 IEEE. Source


Peng Z.,CAS Institute of Microelectronics | Wang Y.,ZhuZhou CRRC Times Electrical CO. | Shen H.,CAS Institute of Microelectronics | Li C.,ZhuZhou CRRC Times Electrical CO. | And 4 more authors.
Microelectronics Reliability | Year: 2015

The effects of NO and forming gas post oxidation annealing treatments on the interfacial properties and reliability of thermal oxides grown on n-type 4H-SiC (0001) Si face have been investigated in this study. The results show that forming gas annealing (FGA) treatment has limited effect on interface trap density (D it) while it results in an improvement of the insulating properties of thermal oxide with uniform high FN barrier height (2.56eV), high field-to-breakdown (10.71 MV/cm) and charge-to-breakdown (0.078 C/cm2). On the other hand, NO annealing causes a drastic reduction in D it in the entire energy level, but in the case of reliability, it is not so effective as FGA, with lower barrier height (2.52eV), field-to-breakdown (10.08 MV/cm), charge-to-breakdown (0.025 C/cm2) and worse uniformity of oxide. The combined NO&FGA treatment was also studied. It leads to a significant reduction in interface trap density further, especially in deep energy level (E C -E T ≥0.4eV). As for reliability, it brings about uniform barrier height (2.69eV), field-to-breakdown (10.15 MV/cm) and charge-to-breakdown (0.024 C/cm2). Taking interfacial properties and reliability into account, combined NO&FGA treatment is a promising POA technique for fabrication of high-quality SiC MOS devices. © 2015. Source

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