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Feng H.,Tianjin University of Technology | Hou J.,Tianjin University of Technology | Qu Y.,Tianjin University of Technology | Shan D.,Tianjin University of Technology | Yao G.,Zhejiang Jiakang Electronics Co.
Journal of Alloys and Compounds | Year: 2012

Rare-earth doped barium zirconium titanate (BZT) ceramics, Ba(Zr 0.25Ti 0.75)O 3 + xCeO 2, (x = 0-1.5 at%) were obtained by a solid state reaction route. Perovskite-like single-phase compounds were confirmed from X-ray diffraction data and the lattice parameters were refined by the Rietveld method. It is found that, integrating with the lattice parameters and the distortion of crystal lattice, there is an alternation of substitution preference of cerium ions for the host cations in perovskite lattice. Morphological analysis on sintered samples by scanning electron microscopy shows that the addition of rare-earth ions affects the growth of the grain and remarkably changes the grain morphology. The effect of rare-earth addition to BZT on dielectric and electrical properties is analyzed. High values of dielectric tunability are obtained for cerium doped BZT. Especially, the experimental results on the effect of the contents of rare-earth addition on the resistivity of BZT ceramics were investigated, demonstrating that the samples with x = 0.4 and x = 0.6 could be semiconducting in air atmosphere. © 2011 Published by Elsevier B.V.


Chen W.,Zhejiang Jiakang Electronics Co. | Zhu H.,Zhejiang Jiakang Electronics Co. | Yao Z.,Zhejiang Jiakang Electronics Co.
Yadian Yu Shengguang/Piezoelectrics and Acoustooptics | Year: 2014

This paper introduces the application of planet ball-milling process to the piezoelectric ceramic frequency device manufacturing process, the role in the adjustment of the piezoelectric ceramic oscillator frequency and the profile chamfering process of the vibrators. The results obtained in the process of ball milling of piezoelectric ceramic vibrators performance under different processing conditions are given. The key factoring effecting on the properties of piezoelectric ceramic vibrators was obtained. Main parameters of piezoelectric ceramic frequency components of the frequency accuracy is higher and higher, by ball-milling machining planet mill, realizing the fine adjustment of the element frequency.


Shao H.,Jingdezhen Ceramic Institute | Jiang X.,Jingdezhen Ceramic Institute | Fu X.,Zhejiang Jiakang Electronics Co. | Tu N.,Jingdezhen Ceramic Institute | Li X.,Jingdezhen Ceramic Institute
Yadian Yu Shengguang/Piezoelectrics and Acoustooptics | Year: 2015

Bismuth layer-structured piezoelectric ceramics Na0.5Bi4.5Ti4-2xNbxTaxO15 (NBTNT-x, 0≤x≤0.06) were prepared by using the solid state processing. The effects of the different amount of Nb and Ta modification on the microstructure and electrical properties of Na0.5Bi4.5Ti4O15 ceramics have been investigated. The results reveal that all of the samples have a pure Aurivillius type structure. The sizes of the grain become small and unanimity with a moderate addition of Nb and Ta, while the σ and tan δ of the Na0.5Bi4.5Ti4O15 ceramics are reduced. The Curie temperature (TC) decreases with the addition increase of Nb and Ta. The TC of all the samples is above 610℃. When x=0.02, the ceramic exhibited optimum electrical properties: d33=17 pC/N, kp=4.19%, kt=18.10%, Qm=3527, Pr=10.50 μC/cm2. ©, 2015, Sichuan Institute of Piezoelectric and Acoustooptic Technology. All right reserved.


Yu L.,Hangzhou Dianzi University | Yao G.,Zhejiang Jiakang Electronics Co. | Yang W.,Zhejiang Sci-Tech University
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2012

With the decreasing power requirement of microelectronics, environmental energy sources can begin to replace batteries in the RFID tag. In this spirit, a novel resonate piezoelectric device is developed in the combined structure of SAW and FBAR which used for generating electrical power " parasitically" while the RFID tag is moving. The relationship of the different vibration mode to the power density of harvesting energy is analyzed and the relative merits and compromises are discussed. In the last, the suggestions are proposed for improvements and potential applications in the RFID. © 2012 SPIE.


Li-yang Y.,Hangzhou Dianzi University | Yang W.,Zhejiang Sci-Tech University | Guo-hua Y.,Zhejiang Jiakang electronics Co.
Advanced Materials Research | Year: 2012

PZT(lead zirconate titanate) piezoelectric thin films were deposited on the glass substrates by RF (radio frequency) magnetron sputtering reaction method. The XRD(X-ray diffraction) analysis is used to characterize the structure of thin film, the pattern of EDS(energy dispersive spectrometer) shows the composition of thin film, and SEM(Scanning Electron Microscopy) is used to study the morphologies of thin films. The influence of different sputter gas content on the crystalline quality and the surface morphology are also investigated. The results demonstrate that volatile of lead oxide is closed to the ratio with the oxide content. The roughness of the thin film is influenced by the crystalline quality. © (2012) Trans Tech Publications, Switzerland.


Xu X.-M.,Jingdezhen Ceramic Institute | Jiang X.-P.,Jingdezhen Ceramic Institute | Fu X.-L.,Zhejiang Jiakang Electronics Co. | Zhan H.-Q.,Jingdezhen Ceramic Institute | Xu M.-Z.,Jingdezhen Ceramic Institute
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2014

The Zn2SiO4 crystal wre synthesized by hydrothermal method, using zinc acetate as zinc source and TEOS (tetraethoxysilane) as silicon sources. The influence of reaction time, temperature, pH and different reaction solvent on the growth of Zn2SiO4 crystal were studied. The phase, the structure and morphology were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and transmission electron microscope (TEM). The growth kinetics of Zn2SiO4 crystal was investigated through the calculation of JMA equation. The results show that globular Zn2SiO4 becomes greater in size and crystallization properties of Zn2SiO4 get enchanced with the elevation of temperature and the extention of reaction time. The Avrami exponent of Zn2SiO4 was n145℃=0.55, n165℃=0.60, n205℃=0.71, n185℃=0.85. It reveals the formation of crystals have a trend from diffusion mechanism to the nucleation mechanism. ©, 2014, Chinese Ceramic Society. All right reserved.


Fan Y.-N.,Huazhong University of Science and Technology | Fan Y.-N.,Jingdezhen Ceramic Institute | Cheng Y.-Z.,Huazhong University of Science and Technology | Deng Y.-M.,Zhejiang Jiakang Electronics Co. | Gong R.-Z.,Huazhong University of Science and Technology
2012 10th International Symposium on Antennas, Propagation and EM Theory, ISAPE 2012 | Year: 2012

We propose an ultrathin metamaterial absorber based on Minkowski fractal frequency selective surface and resistive films, which shows a wide-band polarization insensitive and wide-angle strong absorption. This absorber consists of Minkowski fractal loop structure electric resonator, dielectric substrate and backing continuous resistive films. The finite element method was used to simulate and analyze the absorption of the metamaterial absorber. The corresponding high absorption mainly originates from the multiband resonance properties of Minkowski fractal loop structure and Ohmic loss properties of resistive films. The further simulated results indicate that surface resistance of resistive films and dielectric constant can affect the absorbing properties of the metamaterial absorber. This absorber maybe applied in many military fields. © 2012 IEEE.

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