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Kawasaki, Japan

A surface light source device is provided that has high light extraction efficiency and high mechanical strength and can suppress a change in color tone at different viewing angles. To that end, the surface light source device includes: an organic EL element including a luminescent layer; and a light-emitting surface structure layer that is disposed in contact with one of the surfaces of the organic EL element and defines a concave-convex structure on the surface on the device light-emitting surface side. The concave-convex structure includes a plurality of concave portions having oblique surfaces and flat portions disposed around the concave portions. The surface light source device further includes a diffusing member on which the light emitted from the luminescent layer is incident, the diffusing member allowing the incident light to pass therethrough or reflecting the incident light in a diffused manner.


Patent
Zeon Corporation | Date: 2015-05-01

A method for producing a retardation film comprising the steps of: co-extruding or simultaneously casting a thermoplastic resin A and a thermoplastic resin B to obtain a laminated film comprising a layer of the thermoplastic resin A and a layer of the thermoplastic resin B; and uniaxially stretching the laminated film at least twice to cross a molecular orientation axis in the layer of the thermoplastic resin A and a molecular orientation axis in the layer of the thermoplastic resin B each other at almost right angles.


Patent
Zeon Corporation, Japan National Institute of Advanced Industrial Science and Technology | Date: 2015-05-06

A substrate of the present invention for producing aligned carbon nanotube aggregates on a surface thereof is a substrate for producing aligned carbon nanotube aggregates on a surface thereof, the substrate for producing aligned carbon nanotube aggregates including: a metal base substrate; and carburizing prevention layers formed on both front and back surfaces of the metal base substrate, respectively.


Patent
Zeon Corporation | Date: 2015-04-20

A method for producing a retardation film comprising the steps of: (a) uniaxially stretching an original film for producing retardation film in one direction at either a temperature T1 or T2; and then (b) uniaxially stretching the film stretched in the step (a) in a direction perpendicular to the above-mentioned direction of stretching at a temperature T2 or T1 different from the above-mentioned temperature, in which the original film for producing retardation film has a characteristic that a phase of linearly polarized light entering vertically into the film plane and having an oscillating surface of an electric vector in an X-Z plane against linearly polarized light entering vertically into the film plane and having an oscillating surface of an electric vector in a Y-Z plane lags by uniaxially stretching in the direction of the X axis at a temperature T1, and leads by uniaxially stretching in the direction of the X axis at a temperature T2 different from the above-mentioned temperature T1, in which the X axis is an uniaxially stretching direction, the Y axis is a direction perpendicular to the uniaxially stretching direction in the film plane, and the Z axis is a direction of a thickness of the film.


Patent
Globalfoundries and Zeon Corporation | Date: 2015-10-20

A stack that includes, from bottom to top, a nitrogen-containing dielectric layer, an interconnect level dielectric material layer, and a hard mask layer is formed on a substrate. The hard mask layer and the interconnect level dielectric material layer are patterned by an etch. Employing the patterned hard mask layer as an etch mask, the nitrogen-containing dielectric layer is patterned by a break-through anisotropic etch, which employs a fluorohydrocarbon-containing plasma to break through the nitrogen-containing dielectric layer. Fluorohydrocarbon gases used to generate the fluorohydrocarbon-containing plasma generate a carbon-rich polymer residue, which interact with the nitrogen-containing dielectric layer to form volatile compounds. Plasma energy can be decreased below 100 eV to reduce damage to physically exposed surfaces of the interconnect level dielectric material layer.

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