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Stahlhut P.,University of Wurzburg | Stahlhut P.,Zentralinstitut For Neue Materialien Und Prozesstechnik | Ebensperger T.,University of Wurzburg | Ebensperger T.,Fraunhofer Development Center y Technology | And 4 more authors.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | Year: 2014

We present a computed tomography (CT) setup for materials characterization with significantly improved resolution as compared to state of the art mirco- or subμ-CT systems. The system presented here is composed of a customized JEOL JSM7100-F scanning electron microscope with a thermal field-emission electron source allowing to focus an intense electron beam onto specially designed micro-structured reflection target thereby further reducing the size of the X-ray source spot by reducing the electron interaction zone and thus reducing image blur at high magnifications. With the proposed setup geometric magnifications up to M = 1000 and spatial resolutions down to 100 nm can be achieved. We also demonstrate the phase contrast capabilities of the setup. © 2014 Elsevier B.V. All rights reserved. Source


Laudenbach J.,TU Berlin | Gebhardt B.,Zentralinstitut For Neue Materialien Und Prozesstechnik | Syrgiannis Z.,Zentralinstitut For Neue Materialien Und Prozesstechnik | Syrgiannis Z.,University of Trieste | And 4 more authors.
Physica Status Solidi (B) Basic Research | Year: 2013

We present the Raman bands of nano-graphene flakes (NG flakes) produced by oxidation of single-walled carbon nanotubes. These bands overlap with the defect-induced Raman modes of carbon nanotubes. This can lead to an overestimation of the defect density in the nanotubes. Here we analyze the line shape and the dispersion of this superimposing Raman band of NG flakes. Furthermore, we investigate the predicted Raman band of NG flakes next to the high-energy Raman modes (G- and G+) of the nanotubes. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source


Pang S.,Max Planck Institute for Polymer Research | Englert J.M.,Zentralinstitut For Neue Materialien Und Prozesstechnik | Tsao H.N.,Max Planck Institute for Polymer Research | Hernandez Y.,Max Planck Institute for Polymer Research | And 3 more authors.
Advanced Materials | Year: 2010

An extrinsic corrugation-assisted mechanical exfoliation process is introduced to fabricate ultra-large, patterned monolayer graphene on silicon substrates. This exfoliation method, without any contamination, offers not only an ideal alternative for the scalable deposition of monolayer graphene on silicon substrates, but also provides a promising basis for the construction of graphene-based integrated circuits. Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source

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