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Zaporizhzhya, Ukraine

Zubko E.I.,Zaporozhye State Engineering Academy
Journal of Nano- and Electronic Physics | Year: 2012

Transmission and reflection spectra, refraction factor of the porous silicon layers produced in HF(48%): HCl:H2O and HF(48%):HBr:H2O solutions are investigated by the sample illumination and without it. It is established that layers produced by electrolytic anodizing in HF(48%):HBr:H2O = 16:2:80 mass% solution have the best antireflective characteristics and smaller optical transmission than other samples. © 2012 Sumy State University. Source


Bytkin S.V.,Integrated Iron & Steel Works Zaporizhstal JSC | Kritskaya T.V.,Zaporozhye State Engineering Academy | Kobeleva S.P.,National University of Science and Technology "MISIS"
Russian Microelectronics | Year: 2014

The characteristics of low-power and power thyristors based on dislocation-free single crystals of germanium-doped silicon in the range of concentrations NGe ∼ (0.05–1.5) × 1020 cm−3 are presented. Using the methods of processing of the experimental data in STATISTICA and MathCAD medium the criteria parameters of thyristors were measured under the action of radiation and high temperature gradients. The expediency of using germanium-doped silicon to increase the thermal stability and radiation resistance of devices exposed to γ-radiation in the dose range up to 2.94 × 106 mSv was shown. © 2014, Pleiades Publishing, Ltd. Source


Bogomaz A.V.,SE Zaporozhye Titanium and Magnesium Combine | Krytskaja T.V.,Zaporozhye State Engineering Academy | Karpenko A.V.,Zaporozhye State Engineering Academy
Problems of Atomic Science and Technology | Year: 2013

The construction of a thermal knot of the growth vessel of apparatus of large-sized crystals of germanium growing by the immersible pivoted shaper method is developed and tested. In a construction as a bowl material carbon G{cyrillic}MZ{cyrillic}A-0 and carbon-carbon composite bodied by pyrolytic carbon BK-2U{cyrillic} are used. Series of advantages of bowls from BK-2U{cyrillic} in the part of assurance of the given allocation of temperature on a surface of a bowl, heightening of a mechanical strength and fraction soot impurities lowering in a crystal is fixed. In experimentalindustrial conditions crystals of germanium in diameter to 420 mm with high optical characteristic are received. Source


Ivanovna Z.E.,Zaporozhye State Engineering Academy | Yakovlevich S.E.,Zaporozhye State Engineering Academy
2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013 - Conference Proceedings | Year: 2013

Technological scheme for a formation of electron instrument compositions PcCu /por-Si/n-Si and PcAl/por-Si/n-Si has been developed. The data on the technological adaptation of the deposition and annealing of samples have been given. The effect of annealing for morphological and electrical characteristicks of the obtained compositions has been investigated. © 2013 IEEE. Source


Kolobov G.A.,Zaporozhye State Engineering Academy | Karpenko A.V.,Zaporozhye State Engineering Academy
Problems of Atomic Science and Technology | Year: 2016

Overview of technologies for the production of high-purity lightrare, rareearth, radioactivemetalsand their com-pounds: electrolytic refining, vacuum distillation, electron-beam and zone melting, directed crystallization, electro-transfer, extraction, ion exchange. © 2016, National Science Center, Kharkov Institute of Physics and Technology. All rights reserved. Source

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