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Moscow, Russia

Yaremchuk A.F.,National Rsearch University | Starkov A.V.,National Rsearch University | Zaikin A.V.,National Rsearch University | Alekseev A.V.,ZAO Telekom STV | Sokolov E.M.,ZAO Epiel
Semiconductors | Year: 2014

The surface photovoltage method is used to study “silicon-on-sapphire” epitaxial layers with a thickness of 0.3–0.6 μm, which are used to fabricate p-channel MOS (metal—oxide-semiconductor) transistors with improved radiation hardness. It is shown that the manner in which the photoconductivity of the epitaxial layer decays after the end of a light pulse generated by a light-emitting diode (wavelength ∼400 nm) strongly depends on the density of structural defects in the bulk of the structure. This enables control over how a “silicon-on-sapphire” structure is formed to provide the manufacturing of MOS structures with optimal operating characteristics. © 2014, Pleiades Publishing, Ltd. Source


Yaremchuk A.F.,ZAO Telekom STV | Alekseev A.V.,ZAO Telekom STV | Korotkevich A.V.,ZAO Telekom STV
Russian Microelectronics | Year: 2011

An optimum circuit for controlling bias voltages applied to a solar cell during the process of measuring its pulsed current-voltage characteristic (IVC) is suggested. It is shown that the use of an optimum law of control of bias voltage under conditions of a sufficiently short light pulse (6.5 ms) makes it possible to substantially reduce the deviation of dynamic IVC from the ideal static characteristic. This significantly increases the accuracy of the measuring system, which, in turn, leads to an increased accuracy of determining the internal parameters of a solar cell on the basis of the consideration of one or other electrical model. © Pleiades Publishing, Ltd., 2011. Source


Yaremchuk A.F.,ZAO Telekom STV | Alekseev A.V.,ZAO Telekom STV | Korotkevich A.V.,ZAO Telekom STV
Semiconductors | Year: 2010

An optimum scheme is suggested for controlling bias voltages applied to a solar element in the process of measuring its pulsed current-voltage characteristic (IVC). It is shown that the use of an optimum law of control of the bias voltage under conditions of a sufficiently short light pulse (6.5 ms) makes it possible to substantially reduce the deviation of the dynamic IVC from the ideal static characteristic. This substantially increases the accuracy of the measuring system, which, in turn, leads to an improved accuracy of determining internal parameters of a solar cell proceeding from the consideration of this or that electrical model. © 2010 Pleiades Publishing, Ltd. Source

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