Zakheim D.A.,RAS Ioffe Physical - Technical Institute |
Itkinson G.V.,Innovation Center |
Kukushkin M.V.,Innovation Center |
Markov L.K.,RAS Ioffe Physical - Technical Institute |
And 5 more authors.
Semiconductors | Year: 2014
A high-power AlGaInN light-emitting flip-chip crystal with a new configuration of contact pads is developed and fabricated. The implementation of a two-level metallization scheme with a dielectric insulating interlayer significantly improves the active-to-total area ratio of the heterostructure (to 78%). Numerical simulation of the current spread, employed when developing the chip topology, makes it possible to achieve high uniformity of the current distribution over the active-region area and to obtain small values of the differential resistance of the chip (0.3 Ω). Light-emitting diodes with the maximum external quantum efficiency (60%) and output optical power (542 mW) at a working pump current of 350 mA are fabricated on the basis of crystals developed in the study. © 2014 Pleiades Publishing, Ltd.