Yasunaga Corporation | Date: 2014-05-09
A method of forming a fracture start portion of a con rod for forming fracture start portions of a con rod at opposing positions in an inner peripheral surface of a large end of the con rod made of metal, includes a first step of forming a groove portion at a position corresponding to the fracture start portion by using a first insert tip with a large tip end and a second step of forming the fracture start portion, which has become a V-shaped groove, by machining a bottom portion of the groove portion smaller by using a second insert tip having a tip end smaller than the first insert tip.
Fujigaki M.,Wakayama University |
Masaya A.,Wakayama University |
Morimoto Y.,Moire Institute Inc. |
Misaka T.,Yasunaga Corporation |
And 2 more authors.
10th International Symposium on Measurement and Quality Control 2010, ISMQC 2010 | Year: 2010
High-speed and accurate shape measurement method is required in the field of inspection for electronic package. A grating projection method is a technique to measure the shape of an object without contact. For high-speed shape measurement, it is required to calculate spatial coordinate from the phase value of the projected grating in short time. We proposed a shape measurement method using pixel-bypixel calibration tables produced with multiple reference planes. In this method, all the relationships between the phase of the projected grating and the spatial coordinates can be obtained for each pixel. We call it "whole-space tabulation method". This method excludes a lens distortion and the intensity warping of the projected grating in measurement results. Tabulation makes high-speed measurement possible. A high-speed and accurate shape measurement system can be possible to develop easily using this method. In this paper, the principle for shape measurement using the whole-space tabulation method and the measurement result applied for electronic package are shown.
Sakamoto T.,Tokyo University of Science |
Sakamoto T.,Japan Society for the Promotion of Science |
Iida T.,Tokyo University of Science |
Sekiguchi T.,Tokyo University of Science |
And 4 more authors.
Journal of Electronic Materials | Year: 2014
A variety of thermal interface materials (TIMs) were investigated to find a suitable TIM for improving the performance of thermoelectric power generators (TEGs) operating in the medium-temperature range (600–900 K). The thermal resistance at the thermal interface between which the TIM was inserted was evaluated. The TIMs were chosen on the basis of their thermal stability when used with TEGs operating at medium temperatures, their electrical insulating properties, their thermal conductivity, and their thickness. The results suggest that the boron nitride (BN)-based ceramic coating, Whity Paint, and the polyurethane-based sheet, TSU700-H, are suitable TIMs for the heat source and heat sink sides, respectively, of the TEG. Use of these effectively enhances TEG performance because they reduce the thermal contact resistance at the thermal interface. © 2014, TMS.
Yasunaga Corporation | Date: 2013-11-25
Provided are: an MgSi system thermoelectric conversion material which exhibits stably high thermoelectric conversion performance; a sintered body for thermoelectric conversion, which uses this MgSi system thermoelectric conversion material; a thermoelectric conversion element having excellent durability; and a thermoelectric conversion module. A method for producing an MgSi system thermoelectric conversion material according to the present invention comprises a step for heating and melting a starting material composition that contains Mg, Si, Sb and Zn. It is preferable that the contents of Sb and Zn in the starting material composition are respectively 0.1-3.0 at % in terms of atomic weight ratio.
Sakamoto T.,Yasunaga Corporation |
Taguchi Y.,Yasunaga Corporation |
Kutsuwa T.,Yasunaga Corporation |
Ichimi K.,Yasunaga Corporation |
And 2 more authors.
Journal of Electronic Materials | Year: 2015
The durability of Ni electrodes, which are often used for Mg2Si thermoelectric chips, is poor at high working temperatures because of deposition of Mg at the Mg2Si/Ni interface and on the surface. Hence, a “Mg2Si/barrier material/Ni” structure was adopted instead of direct adhesion of Ni to Mg2Si. Ti, TiSi2, and TiN were selected as candidate materials for the barrier layer between Mg2Si and Ni, and the barrier effect, adhesion, and contact resistance of each of these materials were evaluated. After the samples had been annealed at 873 K for 1 h, Mg appeared on the Ti surface and TiSi2 deposited on Mg2Si; however, no Mg was detected on the surface of TiN or in the inner part of the Ni electrode. Continuous, low contact resistance was also observed for Mg2Si/TiN/Ni samples. TiN does not adhere strongly to Mg2Si but is a promising barrier material for Mg2Si/Ni interfaces. © 2015 The Minerals, Metals & Materials Society