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Yonezawa, Japan

Yamagata University is a national university located in the Japanese cities of Yamagata, Yonezawa, and Tsuruoka in Yamagata Prefecture.The university was established in 1949, but its origin can be traced back to the Yamagata Normal School , a public teacher-training institution, founded in 1878 in Yamagata City. The university also has other roots: the Yonezawa Higher Technical School founded in 1910 in Yonezawa City, the Yamagata Higher School founded in 1920 in Yamagata City, the Yamagata Youth Normal School founded in 1922 in Yamagata City, and the Yamagata Prefectural Agricultural College founded in 1947 in Tsuruoka City.Yamagata University is the second-largest university in the Tohoku Region. The university has six faculties and about 10,000 students in four campuses. It also has an additional subcampus in which University K-9 schools are administered. Wikipedia.


Patent
ARKRAY Inc. and Yamagata University | Date: 2015-06-23

Provided is a stilbazolium derivative represented by the general formula (I): wherein R1, R2, R3, and R4 independently represent hydrogen, halogen, alkyl, hydroxyl, carboxyl, or amino; R5 represents hydrogen or alkyl; X represents oxygen or NR6 (R6 is hydrogen or alkyl); and Y represents an anion. In the general formula (I), some or all of hydrogens maybe deuterium.


Patent
Yamagata University and Piolax Medical Devices Inc. | Date: 2014-04-15

Provided are a stent to be placed in the bile duct and a process for producing the stent, the stent hollow being less apt to be blocked even when the stent is placed in the bile duct for a long period. The inner peripheral surface of the stent is coated with a resin layer with resistance to sludge formation that includes a polymer obtained by polymerizing 2-methoxyethyl acrylate. This stent is produced by applying a coating fluid that contains 0.1-0.5 mass % polymer obtained by polymerizing 2-methoxyethyl acrylate, to the inner peripheral surface of a stent.


A polyurethane porous membrane is produced by a simple method to be used for at least one of applications of cell culture and cancer cell growth inhibition. The production method of the polyurethane porous membrane to be used for at least one of the applications of cell culture and cancer cell growth inhibition comprises: a first step of forming a layer of a polyurethane material which is uncured, on a substrate; and a second step of supplying water vapor to an exposed surface of the layer of the polyurethane material formed on the substrate, which is away from the substrate, so as to cure the polyurethane material and provide the layer of the polyurethane material with a porous structure having a plurality of irregularities on the exposed surface.


Patent
Dainippon Ink, Chemicals and Yamagata University | Date: 2015-09-03

Provided is a method of manufacturing a thin film transistor satisfying the relation of L<5 m. The method includes a process of forming a streak portion by performing transfer printing on a support using a member to be transferred which is provided with an ink streak portion for forming source and drain electrodes and has mold releasability, and baking the streak portion to thereby form the source electrode constituted by a conductor and the drain electrode constituted by a conductor. In the method manufacturing a thin film transistor in which the source and drain electrodes obtained above, a semiconductor layer, an insulator layer, and a gate electrode constituted by a conductor are laminated, after the baking, in a laminated cross section of the thin film transistor to be manufactured is set to A and a channel length thereof is set to L, the ink streak portion is provided so as to satisfy the condition of L/A0.05.


Provided is a thin film transistor in which at least a support, source and drain electrodes constituted by a conductor, a semiconductor layer, an insulator layer, and a gate electrode constituted by a conductor are laminated in this order. In a laminated cross section of the thin film transistor, a difference between an electrode width of an electrode on a face coming into contact with the support and an electrode width thereof on a face which is opposite to the face coming into contact with the support and comes into contact with the semiconductor layer falls within a range of 1 m. When an arithmetic average roughness in the electrode width of the electrode on the face which is opposite to the face coming into contact with the support and comes into contact with the semiconductor layer is set to Ra, the relation of Ra10 nm is satisfied.

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