Kahil S.A.K.,XLIM C2S2 |
Laurent S.,XLIM C2S2 |
Quere R.,XLIM C2S2 |
Sombrin J.,XLIM C2S2 |
And 3 more authors.
EuMIC 2016 - 11th European Microwave Integrated Circuits Conference | Year: 2016
An innovative on-wafer multi-tone load-pull (MTLP) bench is presented in this paper. It has been used to assess the linearity performances of different GaN HEMT transistors from two international foundries according to both single- and multi-carrier figures of merit. Time-domain characteristics studies suggest complementary distortion analysis. The transistors are operated at C-band in deep Class-AB. That bias appropriately copes with efficiency and linearity dilemma. The bench currently supports successful telecommunication and radar qualifications. © 2016 European Microwave Association.
Augeau P.,XLIM C2S2 |
Bouysse P.,XLIM C2S2 |
Martin A.,XLIM C2S2 |
Nebus J.M.,XLIM C2S2 |
And 4 more authors.
International Journal of Microwave and Wireless Technologies | Year: 2014
In this paper, we report a new high-speed and high-power switching circuit based on GaN HEMT's. The elementary switching cell, composed of two GaN HEMT's and two resistors, acts like a power threshold comparator with high-output voltage. Theoretical analysis of static and dynamic circuit operation points out the dependence of efficiency and switching speed to the main circuit elements. Four switching cells are then combined together thanks to SiC Schottky diodes to design a multi-level power switch that can be used as a power supply modulator for envelope tracking power amplifiers. The designed four-level supply modulator, based on Nitronex GaN HEMT's, exhibits more than 75% of efficiency for an envelope signal up to 4Â MHz, a switching frequency of 20Â MHz and output voltages in the range of 12-30Â V. Copyright © 2013 Cambridge University Press and the European Microwave Association 2013Â.
Reveyrand T.,XLIM C2S2 |
Ciccognani W.,University of Rome Tor Vergata |
Ghione G.,Polytechnic University of Turin |
Jardel O.,Alcatel - Lucent |
And 5 more authors.
International Journal of Microwave and Wireless Technologies | Year: 2010
The present paper presents the transistor modeling work achieved in the GaN European project KorriGaN (Key Organisation for Research in Integrated Circuits in GaN technology). The KorriGaN project (2005-09) has released 29 GaN circuits such as high-power amplifiers (HPAs), low-noise amplifiers (LNAs), and switches. Modeling is one of the main key to reach successful designs. Therefore, nonlinear models of European GaN HEMT models have been developed. This work deals with characterization tools such as pulsed IV, pulsed [S] parameters, load-pull measurements, and measurement-based methods to perform GaN HEMT compact models parameters extraction. The present paper will describe the transistor modeling activities in KorriGaN for HPA designs (nonlinear models including trapping and/or self-heating effects) and LNA designs (nonlinear models and noise parameters). © 2010 Cambridge University Press and the European Microwave Association.