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Rehovot, Israel

Ebong A.,University of North Carolina at Charlotte | Cooper I.B.,Georgia Institute of Technology | Rounsaville B.,Georgia Institute of Technology | Rohatgi A.,Georgia Institute of Technology | And 4 more authors.
IEEE Electron Device Letters | Year: 2012

In this letter, we report on the ink-jet full gridline cells with three different Ag dosages (70, 90, and 130 mg) on 75-Ω/sq emitters. We observed that the open-circuit voltage (V OC), short-circuit current density (J SC), and fill factor (FF) were highest for the 130-mg dose and decrease thereafter as the Ag dosage decreases. Because of the decreased FF with decreasing Ag dosage, the efficiency followed the same trend. However, we demonstrated, for the first time, fully ink-jetted front Ag gridlines with an FF of 0.765 and efficiency of 18.4% on 239-cm 2 commercial CZ wafers with a sheet resistance of 75 Ω/sq. Noteworthy is the achievement of 17.8% efficiency with only 70 mg of Ag, which is ∼68% less Ag than that used on cells with screen-printed gridlines. This represents a Ag cost saving of ∼0.245 per 6-inch wafer compared to the screen-printed counterpart with 220 mg of Ag. © 2012 IEEE. Source


Ebong A.,Georgia Institute of Technology | Ebong A.,University of North Carolina at Charlotte | Cooper I.B.,Xjet Solar Ltd. | Tate K.,Xjet Solar Ltd. | And 8 more authors.
Conference Record of the IEEE Photovoltaic Specialists Conference | Year: 2011

In this paper we report on the evaluation of the feasibility of jetting full gridline contacts to fabricate solar cells without additional plating step. We have demonstrated, for the first time, fully ink jetted front Ag gridlines with average line width of only 56.6 μm and height of 30 μm. A high series resistance of 1.1 Ω-cm 2 resulted in average fill factor of 0.767 and led to average efficiency of 18.0% on 239 cm 2 commercial CZ wafers with sheet resistance of 65-Ω/sq. This result is very promising and leaves room for improvement, especially with optimized finger spacing, improved ink and co-firing process. © 2011 IEEE. Source


Ebong A.,University of North Carolina at Charlotte | Ebong A.,Georgia Institute of Technology | Cooper I.B.,Georgia Institute of Technology | Rounsaville B.C.,Georgia Institute of Technology | And 5 more authors.
IEEE Electron Device Letters | Year: 2011

Homogeneous high-sheet-resistance emitter (HHSE), excellent surface passivation, and high-quality contacts, along with narrow gridlines, are needed for high-efficiency solar cells. However, HHSE in conjunction with screen-printed (SP) contacts often gives low fill factor (FF) because of high contact resistance. We capitalized on the glass-etching property of light-induced plating of silver to decrease the contact resistance and formed high-quality contacts to 100110 Ω/sq HHSE. This led to the achievement of 78.5% FF, 38.3 mA/cm2 short-circuit current density (JSC) due to narrow line widths (65 μm), and efficiency of 18.7%. © 2011 IEEE. Source

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