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Li Y.-D.,CAS Xinjiang Technical Institute of Physics and Chemistry | Li Y.-D.,Xinjiang Province Key Laboratory of Electronics Information Material and Device | Guo Q.,CAS Xinjiang Technical Institute of Physics and Chemistry | Guo Q.,Xinjiang Province Key Laboratory of Electronics Information Material and Device | And 8 more authors.
Yuanzineng Kexue Jishu/Atomic Energy Science and Technology | Year: 2012

In order to research the electron beam irradiation damage effects of CCD, TCD1209 linear CCD was irradiated by the 1.1 MeV electron beam under two kinds of fluence rates. Room temperature annealing was carried after the irradiation experiment. In the experiment, photoelectric responsibility, dark current, reference voltage, and consumption current of CCDs were investigated. The results show that the damage of CCD under electron irradiation is total ionization dose effect, and is similar to time dependent effect of MOS devices. Source


Gao B.,CAS Xinjiang Technical Institute of Physics and Chemistry | Gao B.,Xinjiang Province Key Laboratory of Electronics Information Material and Device | Gao B.,University of Chinese Academy of Sciences | Yu X.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 15 more authors.
Journal of Semiconductors | Year: 2012

SRAM-based FPGA devices are irradiated by 60Co γ rays at various dose rates to investigate total dose effects and the evaluation method. The dependences of typical electrical parameters such as static power current, peak - peak value, and delay time on total dose are discussed. The experiment results show that the static power current of the devices reduces rapidly at room temperature (25°C) and high temperature (80°C) annealing after irradiation. When the device is irradiated at a low dose rate, the delay time and peak - peak value change unobviously with an increase in the accumulated dose. In contrast, the function parameters completely fail at 2.1 kGy(Si) when the dose rate increases to 0.71 Gy(Si)/s. © 2012 Chinese Institute of Electronics. Source


Gao B.,CAS Xinjiang Technical Institute of Physics and Chemistry | Gao B.,Xinjiang Province Key Laboratory of Electronics Information Material and Device | Gao B.,University of Chinese Academy of Sciences | Yu X.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 16 more authors.
Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams | Year: 2010

The total-dose irradiation damage effects and post-irradiation annealing behavior of Altera SRAM-based FPGA were investigated in order to assess the anti-radiation level of FPGA devices used in space. Different modules were used to achieve the function of frequency division, and output waveforms of distinct modules changed following the total dose and annealing time. As various programs have different modules, by comparing power currents varying with the total dose and annealing time of different programs, different modules accumulated dose and annealing time were discussed. At the same time, the cause and difference of power current restoration under various annealing temperature were analysed. In the end, high and low level voltages at the output terminal were measured, and their relations with accumulated dose and annealing time were analyzed. The experiment results show that the annealing of the positive oxide charges would cause the recovery of the power current under various annealing temperature. With the increasing of annealing time, the functional recovery is sudden while the recovery of power currents is gradual. Source


Gao B.,CAS Xinjiang Technical Institute of Physics and Chemistry | Gao B.,Xinjiang Province Key Laboratory of Electronics Information Material and Device | Gao B.,University of Chinese Academy of Sciences | Yu X.-F.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 17 more authors.
Wuli Xuebao/Acta Physica Sinica | Year: 2011

In order to investigate the total-dose irradiation effects of Altera static random access memory (SRAM)-based FPGA (field programmable gate array), the irradiation response of basic cell of FPGA, i.e. the CMOS, is studied, and the relationship of the output waveform as a function of total dose has been obtained. It indicates that the output waveforms become aberrated and the peak-peak value turns to about 1/10 of the initial value as the total dose increased, resulting from the degradation of leakage current both from field oxygen and the structure; but there are relatively high and low levels left in the output waveforms. Meanwhile, the high level can't keep the already existing state and changes to the low level, and the conversion speed is accelerated with the increase of the total dose. The low level becomes larger than the initial value. As the gate-oxygen is quite thin, the rise time, fall time, and delay of the output waveforms change little with the total dose. © 2011 Chinese Physical Society. Source

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