Xinjiang Key Laboratory of Electronic Information Materials and Device

Urunchi, China

Xinjiang Key Laboratory of Electronic Information Materials and Device

Urunchi, China
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Chen R.,CAS Xinjiang Technical Institute of Physics and Chemistry | Chen R.,Xinjiang Key Laboratory of Electronic Information Materials and Device | Chen R.,University of Chinese Academy of Sciences | Lu W.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 18 more authors.
Hedianzixue Yu Tance Jishu/Nuclear Electronics and Detection Technology | Year: 2011

Radiation effects and room-temperature annealing behavior of CMOS analog-to-digital converter(ADC) irradiated by 60Co γ-rays were investigated. The results show that the response of the ADC is very different between low-and high-dose-rate irradiation. Ionizing radiation damage at high dose rate is more than that at low dose rate. But room-temperature annealing after high-dose-rate irradiation can remove the difference. It shows obviously time dependence effect. Based on the analysis of the mechanism of CMOS ionizing radiation damage, possible sensitive parameters and mechanism for this response are discussed.

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