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Lu W.,CAS Xinjiang Technical Institute of Physics and Chemistry | Lu W.,Xinjiang Key Laboratory of Electronic Information Material and Device | Zheng Y.-Z.,CAS Xinjiang Technical Institute of Physics and Chemistry | Zheng Y.-Z.,Xinjiang Key Laboratory of Electronic Information Material and Device | And 7 more authors.
Yuanzineng Kexue Jishu/Atomic Energy Science and Technology | Year: 2010

Radiation effects under different dose rates and annealing behaviors of domestic bipolar transistors, with same manufacture technology, were investigated. These transistors include NPN transistors of various emitter area, and LPNP transistors with different doping concentrations in emitter. It is shown that different types of transistors have different radiation responses. The results of NPN transistors show that more degradation occurs at less emitter area. Yet, the results of LPNP transistors demonstrate that transistors with lightly doped emitter are more sensitive to radiation, compared with heavily doped emitter. Finally, the mechanisms of the difference between various radiation responses were analyzed. Source


Zheng Q.-W.,CAS Xinjiang Technical Institute of Physics and Chemistry | Zheng Q.-W.,Xinjiang Key Laboratory of Electronic Information Material and Device | Cui J.-W.,CAS Xinjiang Technical Institute of Physics and Chemistry | Cui J.-W.,Xinjiang Key Laboratory of Electronic Information Material and Device | And 10 more authors.
Chinese Physics Letters | Year: 2016

The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor fieldeffect transistors (nMOSFETs) is investigated. Experimental results show that hot-carrier degradations on irradiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation (STI). The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect. © 2016 Chinese Physical Society and IOP Publishing Ltd. Source


Zheng Q.-W.,CAS Xinjiang Technical Institute of Physics and Chemistry | Zheng Q.-W.,Xinjiang Key Laboratory of Electronic Information Material and Device | Zheng Q.-W.,University of Chinese Academy of Sciences | Cui J.-W.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 10 more authors.
Chinese Physics Letters | Year: 2014

The larger back-gate voltage stress is applied on 130 nm partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors isolated by shallow trench isolation. The experimental results show that the back-gate sub-threshold hump of the device is eliminated by stress. This observed behavior is caused by the high electric field in the oxide near the bottom corner of the silicon island. The total ionizing dose hardness of devices with pre back-gate stress is enhanced by the interface states induced by stress. © 2014 Chinese Physical Society and IOP Publishing Ltd. Source


Zheng Q.-W.,CAS Xinjiang Technical Institute of Physics and Chemistry | Zheng Q.-W.,Xinjiang Key Laboratory of Electronic Information Material and Device | Cui J.-W.,CAS Xinjiang Technical Institute of Physics and Chemistry | Cui J.-W.,Xinjiang Key Laboratory of Electronic Information Material and Device | And 12 more authors.
Wuli Xuebao/Acta Physica Sinica | Year: 2016

Enhancing low dose rate sensitivity (ELDRS) in bipolar device is a major problem of liner circuit radiation hardness prediction for space application. ELDRS is usually attributed to space-charge effect. A key element is the difference in transport rate between holes and protons in SiO2. Interface-trap formation at high dose rate is reduced due to positive charge buildup in the Si/SiO2 interfacial region (due to the trapping of holes and/or protons) which reduces the flow rates of subsequent holes and protons (relative to the low-dose-rate case) from the bulk of the oxide to the Si/SiO2 interface. Generally speaking, the dose rate of metal oxide semiconductor (MOS) device is time dependent when annealing of radiation-induced charge is taken into account. The degradation of MOS device induced by the low dose rate irradiation is the same as that by high dose rate when annealing of radiation-induced charge is taken into account. However, radiation response of new generation MOS device is dominated by charge buildup in shallow trench isolation (STI) rather than gate oxide as older generation device. Unlike gate oxides, which are routinely grown by thermal oxidation, field oxides are produced using a wide variety of deposition techniques. As a result, they are typically thick (100 nm), soft to ionizing radiation, and electric field is far less than that of gate oxide, which is similar to the passivation layer of bipolar device and may lead to ELDRS. Therefore, dose-rate sensitivities of n-type metal oxide semiconductor field effect transistor (NMOSFET) and static random access memory (SRAM) manufactured by 0.18 μm complementary metal oxide semiconductor (CMOS) process are explored experimentally and theoretically in this paper. Radiation-induced leakages in NMOSFET and SRAM are examined each as a function of dose rate. Under the worst-case bias, the degradation of NMOSFET is more severe under the low dose rate irradiation than under the high dose rate irradiation and anneal. Moreover, radiation-induced standby current rising in SRAM is more severe under the low dose rate irradiation than under the high dose rate irradiation even when anneal is not considered. The above experimental results reveal that the dose-rate sensitivity of deep sub-micron CMOS process is not related to time-dependent effects of CMOS devices. Mathematical description of the combination between enhanced low dose-rate sensitivity and timedependent effects as applied to radiation-induced leakage in NMOSFET is developed. It has been numerically found that non time-dependent effect of deep sub-micron CMOS device arises due to the competition between enhanced low dose-rate sensitivity in bottom of STI and time-dependent effect at the top of STI. The high dose rate irradiation is overly conservative for devices used in a low dose rate environment. The test method provides an extended room temperature anneal test to allow leakage-related parameters that exceed postirradiation specifications to return to a specified range. © 2016 Chinese Physical Society. Source


Zhang X.,CAS Xinjiang Technical Institute of Physics and Chemistry | Zhang X.,Xinjiang Key Laboratory of Electronic Information Material and Device | Guo Q.,CAS Xinjiang Technical Institute of Physics and Chemistry | Guo Q.,Xinjiang Key Laboratory of Electronic Information Material and Device | And 4 more authors.
He Jishu/Nuclear Techniques | Year: 2015

Background: The total dose effect studies for the Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) have not been mainly focused on fail mechanism in circuit. Purpose: A commercial SONOS-based Nitride-Read-Only-Memory (NROM) was irradiated by 60Co γ rays and annealed, Total Ionizing Dose (TID) failure mechanism and annealing characteristics of the device were analyzed. Methods: DC, AC and function parameters of this memory were tested in radiation and annealing by VLSI test system, the radiation-sensitive parameters were obtained through analyzing the test data, and the reason for function failure was analyzed. Results: The study showed that: the threshold of MOS in charge pump and the sense amplifier were drift because of the interface trap charge, and the circuit module performance deterioration led to functional failure of the device. The current parameters were raised rapidly because leakage paths formed in Shallow Trench Isolation (STI). Conclusion: A little of interface trap charge was annealed during annealing, resulting in incomplete recovery of circuit module performance, and insignificant drop of the current parameters. ©, 2015, Science Press. All right reserved. Source

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