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Wu X.,CAS Xinjiang Technical Institute of Physics and Chemistry | Wu X.,Xinjiang Key Laboratory of Electronic Information Material and Device | Wu X.,University of Chinese Academy of Sciences | Lu W.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 11 more authors.
Yuanzineng Kexue Jishu/Atomic Energy Science and Technology | Year: 2014

The study of the total ionizing dose effect of 0.18 μm MOS differential pair transistors which are exposed to a 60Co γ-ray radiation was presented in this paper, in the view of the characterization of mismatch and degradation mechanism. The results show that NMOS differential pair transistors are more sensitive than PMOS differential pair transistors. In NMOS differential pair transistors, the mismatch on the transfer characteristic curve and threshold voltage is degraded after irradiation, whereas this phenomenon does not take place in PMOS differential pair transistors. In addition, the gate current has the large degree of radiation hardness associated to very thin gate oxide. ©, 2014, Yuanzineng Kexue Jishu/Atomic Energy Science and Technology. All right reserved.


Wu X.,CAS Xinjiang Technical Institute of Physics and Chemistry | Wu X.,Xinjiang Key Laboratory of Electronic Information Material and Device | Wu X.,University of Chinese Academy of Sciences | Lu W.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 11 more authors.
Wuli Xuebao/Acta Physica Sinica | Year: 2013

This paper describes the total ionizing dose effect on 0.18 μm narrow-channel NMOS transistors which are exposed to a γ-ray radiation. Electrical parameters such as threshold voltage, leakage current, trans-conductance, drain-source conductance, and subthreshold slope extracted from the I-V curves are analyzed pre-and post-irradiation. Results show that the threshold voltage, the trans-conductance, and the drain-source conductance are sensitive to radiation compared to wide-channel NMOS transistors-the effect we call radiation induced narrow channel effect (RINCE). The amount of oxide-trapped charges and interface states which would degrade the threshold voltage and leakage current is induced in the STI oxide. The gate oxide is insensitive to irradiation. Combining the structure and process of devices, we finally discuss and analyze the above phenomenon in detail. © 2013 Chinese Physical Society.


Lu W.,CAS Xinjiang Technical Institute of Physics and Chemistry | Lu W.,Xinjiang Key Laboratory of Electronic Information Material and Device | Zheng Y.-Z.,CAS Xinjiang Technical Institute of Physics and Chemistry | Zheng Y.-Z.,Xinjiang Key Laboratory of Electronic Information Material and Device | And 7 more authors.
Yuanzineng Kexue Jishu/Atomic Energy Science and Technology | Year: 2010

Radiation effects under different dose rates and annealing behaviors of domestic bipolar transistors, with same manufacture technology, were investigated. These transistors include NPN transistors of various emitter area, and LPNP transistors with different doping concentrations in emitter. It is shown that different types of transistors have different radiation responses. The results of NPN transistors show that more degradation occurs at less emitter area. Yet, the results of LPNP transistors demonstrate that transistors with lightly doped emitter are more sensitive to radiation, compared with heavily doped emitter. Finally, the mechanisms of the difference between various radiation responses were analyzed.


Ke J.,CAS Xinjiang Technical Institute of Physics and Chemistry | Ke J.,Xinjiang Key Laboratory of Electronic Information Material and Device | Ke J.,University of Chinese Academy of Sciences | Wu L.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 14 more authors.
Journal of Semiconductors | Year: 2015

NPN-input bipolar operational amplifiers LM741 were irradiated with 60Coγ-ray, 3 MeV protons and 10 MeV protons respectively at different biases to investigating the proton radiation response of the NPN-input operational amplifier. The comparison of protons with 60Coγ-rays showed that the proton radiation mainly induced ionization damage in LM741. Under different bias conditions, the radiation sensitivity is different; zero biased devices show more radiation sensitivity in the input biased current than forward biased devices. Supply current (±Icc/ is another parameter that is sensitive to proton radiation, 60Coγ-ray, 3 MeV and 10 MeV proton irradiation would induce a different irradiation response in ±Icc, which is caused by different ionization energy deposition and displacement energy deposition of 60Coγ-ray, 3 MeV and 10 MeV proton irradiation. © 2015 Chinese Institute of Electronics.


Zheng Q.-W.,CAS Xinjiang Technical Institute of Physics and Chemistry | Zheng Q.-W.,Xinjiang Key Laboratory of Electronic Information Material and Device | Zheng Q.-W.,University of Chinese Academy of Sciences | Cui J.-W.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 15 more authors.
Chinese Physics B | Year: 2015

Functional failure mode of commercial deep sub-micron static random access memory (SRAM) induced by total dose irradiation is experimentally analyzed and verified by circuit simulation. We extensively characterize the functional failure mode of the device by testing its electrical parameters and function with test patterns covering different functional failure modes. Experimental results reveal that the functional failure mode of the device is a temporary function interruption caused by peripheral circuits being sensitive to the standby current rising. By including radiation-induced threshold shift and off-state leakage current in memory cell transistors, we simulate the influence of radiation on the functionality of the memory cell. Simulation results reveal that the memory cell is tolerant to irradiation due to its high stability, which agrees with our experimental result. © 2015 Chinese Physical Society and IOP Publishing Ltd.


Zheng Q.-W.,CAS Xinjiang Technical Institute of Physics and Chemistry | Zheng Q.-W.,Xinjiang Key Laboratory of Electronic Information Material and Device | Cui J.-W.,CAS Xinjiang Technical Institute of Physics and Chemistry | Cui J.-W.,Xinjiang Key Laboratory of Electronic Information Material and Device | And 10 more authors.
Chinese Physics Letters | Year: 2016

The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor fieldeffect transistors (nMOSFETs) is investigated. Experimental results show that hot-carrier degradations on irradiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation (STI). The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect. © 2016 Chinese Physical Society and IOP Publishing Ltd.


Zhang X.,CAS Xinjiang Technical Institute of Physics and Chemistry | Zhang X.,Xinjiang Key Laboratory of Electronic Information Material and Device | Guo Q.,CAS Xinjiang Technical Institute of Physics and Chemistry | Guo Q.,Xinjiang Key Laboratory of Electronic Information Material and Device | And 4 more authors.
He Jishu/Nuclear Techniques | Year: 2015

Background: The total dose effect studies for the Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) have not been mainly focused on fail mechanism in circuit. Purpose: A commercial SONOS-based Nitride-Read-Only-Memory (NROM) was irradiated by 60Co γ rays and annealed, Total Ionizing Dose (TID) failure mechanism and annealing characteristics of the device were analyzed. Methods: DC, AC and function parameters of this memory were tested in radiation and annealing by VLSI test system, the radiation-sensitive parameters were obtained through analyzing the test data, and the reason for function failure was analyzed. Results: The study showed that: the threshold of MOS in charge pump and the sense amplifier were drift because of the interface trap charge, and the circuit module performance deterioration led to functional failure of the device. The current parameters were raised rapidly because leakage paths formed in Shallow Trench Isolation (STI). Conclusion: A little of interface trap charge was annealed during annealing, resulting in incomplete recovery of circuit module performance, and insignificant drop of the current parameters. ©, 2015, Science Press. All right reserved.


Zheng Q.-W.,CAS Xinjiang Technical Institute of Physics and Chemistry | Zheng Q.-W.,Xinjiang Key Laboratory of Electronic Information Material and Device | Cui J.-W.,CAS Xinjiang Technical Institute of Physics and Chemistry | Cui J.-W.,Xinjiang Key Laboratory of Electronic Information Material and Device | And 12 more authors.
Wuli Xuebao/Acta Physica Sinica | Year: 2016

Enhancing low dose rate sensitivity (ELDRS) in bipolar device is a major problem of liner circuit radiation hardness prediction for space application. ELDRS is usually attributed to space-charge effect. A key element is the difference in transport rate between holes and protons in SiO2. Interface-trap formation at high dose rate is reduced due to positive charge buildup in the Si/SiO2 interfacial region (due to the trapping of holes and/or protons) which reduces the flow rates of subsequent holes and protons (relative to the low-dose-rate case) from the bulk of the oxide to the Si/SiO2 interface. Generally speaking, the dose rate of metal oxide semiconductor (MOS) device is time dependent when annealing of radiation-induced charge is taken into account. The degradation of MOS device induced by the low dose rate irradiation is the same as that by high dose rate when annealing of radiation-induced charge is taken into account. However, radiation response of new generation MOS device is dominated by charge buildup in shallow trench isolation (STI) rather than gate oxide as older generation device. Unlike gate oxides, which are routinely grown by thermal oxidation, field oxides are produced using a wide variety of deposition techniques. As a result, they are typically thick (100 nm), soft to ionizing radiation, and electric field is far less than that of gate oxide, which is similar to the passivation layer of bipolar device and may lead to ELDRS. Therefore, dose-rate sensitivities of n-type metal oxide semiconductor field effect transistor (NMOSFET) and static random access memory (SRAM) manufactured by 0.18 μm complementary metal oxide semiconductor (CMOS) process are explored experimentally and theoretically in this paper. Radiation-induced leakages in NMOSFET and SRAM are examined each as a function of dose rate. Under the worst-case bias, the degradation of NMOSFET is more severe under the low dose rate irradiation than under the high dose rate irradiation and anneal. Moreover, radiation-induced standby current rising in SRAM is more severe under the low dose rate irradiation than under the high dose rate irradiation even when anneal is not considered. The above experimental results reveal that the dose-rate sensitivity of deep sub-micron CMOS process is not related to time-dependent effects of CMOS devices. Mathematical description of the combination between enhanced low dose-rate sensitivity and timedependent effects as applied to radiation-induced leakage in NMOSFET is developed. It has been numerically found that non time-dependent effect of deep sub-micron CMOS device arises due to the competition between enhanced low dose-rate sensitivity in bottom of STI and time-dependent effect at the top of STI. The high dose rate irradiation is overly conservative for devices used in a low dose rate environment. The test method provides an extended room temperature anneal test to allow leakage-related parameters that exceed postirradiation specifications to return to a specified range. © 2016 Chinese Physical Society.


Fei W.-X.,CAS Xinjiang Technical Institute of Physics and Chemistry | Fei W.-X.,Xinjiang Key Laboratory of Electronic Information Material and Device | Fei W.-X.,University of Chinese Academy of Sciences | Lu W.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 26 more authors.
Yuanzineng Kexue Jishu/Atomic Energy Science and Technology | Year: 2011

At various dose rates, ionizing radiation response of NPN bipolar transistors at three kinds of base-emitter junction biases was investigated. The results show that the radiation damages are most significant at base-emitter junction reverse bias and minimal at forward bias when irradiated at high or low dose rate. Furthermore, the radiation damage is more severe at low dose rate for the same bias, i.e. enhanced low dose rate sensitivity (ELDRS). The influence of base-emitter junction bias on ELDRS effect is obvious. The ELDRS effect is most significant for base-emitter junction forward bias, while it is least for reverse bias. The mechanisms of these results were discussed.


Zheng Q.-W.,CAS Xinjiang Technical Institute of Physics and Chemistry | Zheng Q.-W.,Xinjiang Key Laboratory of Electronic Information Material and Device | Zheng Q.-W.,University of Chinese Academy of Sciences | Cui J.-W.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 10 more authors.
Chinese Physics Letters | Year: 2014

The larger back-gate voltage stress is applied on 130 nm partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors isolated by shallow trench isolation. The experimental results show that the back-gate sub-threshold hump of the device is eliminated by stress. This observed behavior is caused by the high electric field in the oxide near the bottom corner of the silicon island. The total ionizing dose hardness of devices with pre back-gate stress is enhanced by the interface states induced by stress. © 2014 Chinese Physical Society and IOP Publishing Ltd.

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