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Zheng Q.-W.,CAS Xinjiang Technical Institute of Physics and Chemistry | Zheng Q.-W.,Xinjiang Key Laboratory of Electrical Information Materials and Devices | Zheng Q.-W.,University of Chinese Academy of Sciences | Yu X.-F.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 10 more authors.
Wuli Xuebao/Acta Physica Sinica | Year: 2013

In the present paper, function test of different test pattern was used to investigate function failure of static random access memory (SRAM) induced by the total dose effect. By comparing the function test results of different test pattern and single error bit, it is shown that the failure mode of the device is data retention fault, and different storage cell had diverse data retention time, the fault module of device is the storage cell. We discussed the reason for these phenomena in detail using simple circuit model of storage cell, and also analyzed the influence of these phenomena on test method to evaluate the total dose radiation damage of SRAM. © 2013 Chinese Physical Society. Source


Cui J.-W.,CAS Xinjiang Technical Institute of Physics and Chemistry | Cui J.-W.,Xinjiang Key Laboratory of Electrical Information Materials and Devices | Cui J.-W.,University of Chinese Academy of Sciences | Yu X.-F.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 6 more authors.
Wuli Xuebao/Acta Physica Sinica | Year: 2012

Total dose irradiation and the hot-carrier damages are two of the important factors for the application of sub-micro and even smaller MOS devices. Therefore, how to prevent the device from being damaged attracts much attention. Total dose irradiation and hot-carrier effects of sub-micro NMOSFET with various channel sizes are studied. Electronic parameters are measured and the results show that though the principles of damages are somewhat similar, the total dose irradiation and the damage behavior and their dependences on the width-to-length(W/L) ratio of channel size for these two effects are different. The most notable damage of radiation lies in the great increase of the off-state leakage current, and the damage increases with W/L reducing. While for hot-carrier effect, several parameters such as trans-conductance change a lot, except for the off-state leakage current. And the damage increases as channel length and channel width decrease. The different damage behaviors and different relations to channel size are attributed to the different location of charges induced. Therefore, different aspects should be considered when the device is hardened against these two effects. © 2012 Chinese Physical Society. Source


Wang B.,CAS Xinjiang Technical Institute of Physics and Chemistry | Wang B.,Chinese Academy of Sciences | Wang B.,Xinjiang Key Laboratory of Electrical Information Materials and Devices | Wang B.,University of Chinese Academy of Sciences | And 31 more authors.
Wuli Xuebao/Acta Physica Sinica | Year: 2014

A study of ionizing radiation effects is presented for CMOS active pixel sensors manufactured in a 0.5-μm CMOS (complementary metal oxide semiconductor) by n-well technology. The basic mechanisms that may cause failure are also presented. After exposure in γ-rays, the most sensitive parts to radiation-dark signals and dark signal non-uniformity are discussed, i.e. the physical mechanism of the degradation by irradiation. One can see from the experiment that the mean dark signals are dramatically increased with total dose for both operated and static devices. Static device seems more affected by irradiation than operated device. We find that most part of the total dark signal in a pixel comes from the depletion of the photodiode edge at the surface and the rest part is caused by the leakage of the source region of the reset transistor. Dark signal non-uniformity follows the dark current evolution with total dose. Further study of photodiode and LOCOS (local oxidation of silicon) isolation behaviors under irradiation should be done so as to correctly use this qualification techniques on MOS sensors manufactured in CMOS n-well technology process. © 2014 Chinese Physical Society. Source


Cui J.-W.,CAS Xinjiang Technical Institute of Physics and Chemistry | Cui J.-W.,Xinjiang Key Laboratory of Electrical Information Materials and Devices | Cui J.-W.,University of Chinese Academy of Sciences | Yu X.-F.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 17 more authors.
Yuanzineng Kexue Jishu/Atomic Energy Science and Technology | Year: 2010

Total dose irradiation effect and reliability of domestic partially-depleted SOI MOSFET were studied. It is found that the oxide-trapped charge mainly causes the threshold voltage shift. The back gate is more sensitive to the total dose irradiation than the top gate, while it is still the top gate that determines the radiation performance of the device as the back gate shifts within a certain scope. The descendent of the saturated current results from the action of the interface-trap charge. It is also believed that the total dose irradiation will lower the device reliability. Source


Zhou H.,CAS Xinjiang Technical Institute of Physics and Chemistry | Zhou H.,Xinjiang Key Laboratory of Electrical Information Materials and Devices | Zhou H.,University of Chinese Academy of Sciences | Zheng Q.-W.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 15 more authors.
Wuli Xuebao/Acta Physica Sinica | Year: 2016

In this paper, a series of hot carriers tests of irradiated 130 nm partially depleted silicon-on-insulator NMOSFETs is carried out in order to explore the HCI influence on the ionizing radiation damage. Some devices are irradiated by up to 3000 Gy before testing the hot carriers, while other devices experience hot carriers test only. All the devices we used in the experiments are fabricated by using a 130 nm partially depleted (PD) SOI technology. The devices each have a 6 nm-thick gate oxide, 100 nm-thick silicon film, and 145 nm-thick buried oxide, with using shallow trench isolation (STI) for isolation scheme. The irradiation experiments are carried by 60Co-ray at the Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, with a dose rate of 0.8 Gy (Si)/s. During irradiation all the samples are biased at 3.3 V, i. e., VGS = 3.3 V and other pins are grounded, and when the devices are irradiated respectively by total doses of 500, 1000, 2000 and 3000 Gy (Si), we test the characteristic curves again. Then 168-hour room temperature anneal experiments are carried out for the irradiated devices, using the same biases under irradiation. The HCI stress condition is chosen by searching for the maximum substrate current. The cumulative stress time is 5000 s, and the time intervals are 10, 100, 500, 1000 and 5000 s respectively. After each stress interval, the device parameters are measured until stress time termination appears. Through the comparison of characteristic between pre-irradiated and unirradiated devices, we find that the total dose damage results in the enhanced effect of hot carriers: the substrate current value which characterizes the hot carrier effect (for SOI device are the body to the ground current) increases with the increase of total dose, as the pre-irradiated and unirradiated device do under the same conditions of hot carrier stress, the degradations of key electrical parameters are more obvious for the pre-irradiated one. In order to analyze the physical mechanism of the experimental phenomena, the wide channel device is tested too, we also analyze the phenomenon of the decrease of the substrate current of the wide channel device. From the contrasts of pre-irradiated and unirradiated devices, and narrow and wide channel device test results, we can obtain the following conclusions: SOI devices (especially the narrow channel device) with additional ionization irradiation field induced by ionizing radiation enhance the rate of injecting electrons into the silicon dioxide, and produce oxide trap charge and interface states, which leads to the fact that the channel carrier scattering becomes stronger, transfer characteristic curve of the device, output characteristic curve, transconductance curves and the related parameters of VT, GMmax, IDSAT degradation degree increase. So, when designing 130 nm PD SOI NMOSFETs which are applied to the space environment, one should make a compromise between radiation resistance and HCI reliability. © 2016, Chinese Physical Society. Source

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