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Zhang Y.,CAS Suzhou Institute of Nano Technology and Nano Bionics | Zhang Y.,University of Chinese Academy of Sciences | Xu F.,Peking University | Zhao D.,CAS Suzhou Institute of Nano Technology and Nano Bionics | And 10 more authors.
Electronics Letters | Year: 2014

Based on the optimised high-voltage network design and the resistance matching technique, a wafer-level light emitting diode (WL-LED) with a light output power of 157 W has been successfully demonstrated for the first time. The external quantum efficiency of the fabricated WL-LED was measured to be 24% at a driving current of 4 A. © The Institution of Engineering and Technology 2014.


Li J.,Nanjing University | Zhou Y.,Nanjing University | Qi Y.,Xiangneng Hualei Optoelectronic Co. | Miao Z.,Xiangneng Hualei Optoelectronic Co. | And 5 more authors.
IEEE Electron Device Letters | Year: 2015

This study designed and tested an innovative light-emitting diode (LED) chip with a built-in sensor. Two electrically isolated units, the LED (for light emission) and the sensor (for monitoring junction temperature and light intensity), were integrated on a single chip. The sensor unit determines the junction temperature by measuring the forward voltage; the light output power of the LED unit can be precisely extrapolated with a polynomial function based on the photocurrent and junction temperature. This novel structure enables the in-situ real-time monitoring of the LED junction temperature and light output power, which allows a highly detailed and/or in-field LED reliability analysis and provides valuable feedback information for smart LED lighting systems. © 2015 IEEE.


Zhang Y.,CAS Suzhou Institute of Nano Technology and Nano Bionics | Zhang Y.,University of Chinese Academy of Sciences | Xu J.,CAS Suzhou Institute of Nano Technology and Nano Bionics | Xu J.,University of Science and Technology of China | And 8 more authors.
IEEE Electron Device Letters | Year: 2016

A simplified packaging process was successfully developed for a wafer-level light emitting diode (WL-LED) chip aiming at very-high power solid-state lighting (SSL) applications. Compared with the traditional chip-on-board (COB) technology, WL-LED chip not only greatly simplifies the packaging process but also enables the lighting source more compact. The fabricated blue WL-LED SSL source with a record-high light output power of 305 W exhibits ∼30% wall plug efficiency at an input electrical power of 1026 W. © 1980-2012 IEEE.


Nong M.-T.,Xiangneng Hualei Optoelectronic Co. | Miao Z.-L.,Xiangneng Hualei Optoelectronic Co. | Liang Z.-Y.,Xiangneng Hualei Optoelectronic Co. | Zhou Z.-H.,Xiangneng Hualei Optoelectronic Co. | And 4 more authors.
Faguang Xuebao/Chinese Journal of Luminescence | Year: 2015

AlN films were prepared on patterned sapphire substrates (PSS) by direct-current reactive magnetron sputtering (RMS) and used as buffer layers. The crystal quality and optical properties of GaN films grown by metal-organic chemical vapor deposition (MOCVD) with AlN buffer layers were investigated. Compared with conventional low temperature GaN buffer layers, the RMS AlN buffer layers have smoother and smaller nucleation islands, which benefits the lateral growth and the coalesce of three-dimensional GaN islands. It is found that GaN-based LEDs with RMS AlN buffer layers have higher light output power, lower electric leakage and stronger electrostatic discharge(ESD) characteristic owning to the lower threading dislocation density (TDD). © 2015, SCIENCE PRESS. All right reserved.

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