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XiangNeng Hualei Optoelectronic Co. | Date: 2016-05-05

This disclosure refers to a manufacturing method of a flip-chip structure of III group semiconductor light emitting device. The manufacturing method includes steps of: growing a substrate, a buffer layer, an N type nitride semiconductor layer, an active layer and a P type nitride semiconductor layer sequentially from bottom to top to form an epitaxial structure, depositing a transparent conductive layer; defining an isolation groove with the yellow light etching process, depositing a first insulation layer structure, depositing a P type contact metal and N type contact metal, depositing a second insulation layer structure, depositing a flip-chip P type electrode and flip-chip N type electrode, then removing the photo resist by using of the stripping process to get a wafer; thinning, dicing, separating, measuring and sorting the wafer. In this disclosure, structure of the first insulation layer structure which is formed by the Prague reflective layer, the metal layer and the multilayer of oxide insulation, acts as a reflector structure and an insulation layer to replace the flip-chip reflector structure design and the first insulation layer, so that a metal protective layer can be omitted.


Patent
XiangNeng HuaLei Optoelectronic Co. | Date: 2016-05-05

This application refers to a flip-chip structure of Group III semiconductor light emitting device. The flip-chip structure includes: a substrate, a buffer layer, nitride semiconductor layer, an active layer, a P type nitride semiconductor layer, a transparent conductive layer, a first insulation layer, a P type contact metal, a N type contact metal, a second insulation layer, a flip-chip P type electrode and a flip-chip N type electrode. The substrate, the buffer layer, the N type nitride semiconductor layer, the active layer, the P type nitride semiconductor layer which grow sequentially from bottom to top form a linear convex mesa. In this application, structure of the first insulation layer which is formed by a Braggs reflective layer, a metal layer and the multilayer oxide insulation layer, acts as a reflector structure and an insulation layer to replace the flip-chip reflector structure design and the first insulation layer, so that a metal protective layer can be omitted.


Zhang Y.,CAS Suzhou Institute of Nano Technology and Nano Bionics | Zhang Y.,University of Chinese Academy of Sciences | Xu F.,Peking University | Zhao D.,CAS Suzhou Institute of Nano Technology and Nano Bionics | And 10 more authors.
Electronics Letters | Year: 2014

Based on the optimised high-voltage network design and the resistance matching technique, a wafer-level light emitting diode (WL-LED) with a light output power of 157 W has been successfully demonstrated for the first time. The external quantum efficiency of the fabricated WL-LED was measured to be 24% at a driving current of 4 A. © The Institution of Engineering and Technology 2014.


Li J.,Nanjing University | Zhou Y.,Nanjing University | Qi Y.,Xiangneng Hualei Optoelectronic Company | Miao Z.,Xiangneng Hualei Optoelectronic Company | And 5 more authors.
IEEE Electron Device Letters | Year: 2015

This study designed and tested an innovative light-emitting diode (LED) chip with a built-in sensor. Two electrically isolated units, the LED (for light emission) and the sensor (for monitoring junction temperature and light intensity), were integrated on a single chip. The sensor unit determines the junction temperature by measuring the forward voltage; the light output power of the LED unit can be precisely extrapolated with a polynomial function based on the photocurrent and junction temperature. This novel structure enables the in-situ real-time monitoring of the LED junction temperature and light output power, which allows a highly detailed and/or in-field LED reliability analysis and provides valuable feedback information for smart LED lighting systems. © 2015 IEEE.


Zhang Y.,CAS Suzhou Institute of Nano Technology and Nano Bionics | Zhang Y.,University of Chinese Academy of Sciences | Xu J.,CAS Suzhou Institute of Nano Technology and Nano Bionics | Xu J.,University of Science and Technology of China | And 8 more authors.
IEEE Electron Device Letters | Year: 2016

A simplified packaging process was successfully developed for a wafer-level light emitting diode (WL-LED) chip aiming at very-high power solid-state lighting (SSL) applications. Compared with the traditional chip-on-board (COB) technology, WL-LED chip not only greatly simplifies the packaging process but also enables the lighting source more compact. The fabricated blue WL-LED SSL source with a record-high light output power of 305 W exhibits ∼30% wall plug efficiency at an input electrical power of 1026 W. © 1980-2012 IEEE.


Nong M.-T.,Xiangneng Hualei Optoelectronic Co. | Miao Z.-L.,Xiangneng Hualei Optoelectronic Co. | Liang Z.-Y.,Xiangneng Hualei Optoelectronic Co. | Zhou Z.-H.,Xiangneng Hualei Optoelectronic Co. | And 4 more authors.
Faguang Xuebao/Chinese Journal of Luminescence | Year: 2015

AlN films were prepared on patterned sapphire substrates (PSS) by direct-current reactive magnetron sputtering (RMS) and used as buffer layers. The crystal quality and optical properties of GaN films grown by metal-organic chemical vapor deposition (MOCVD) with AlN buffer layers were investigated. Compared with conventional low temperature GaN buffer layers, the RMS AlN buffer layers have smoother and smaller nucleation islands, which benefits the lateral growth and the coalesce of three-dimensional GaN islands. It is found that GaN-based LEDs with RMS AlN buffer layers have higher light output power, lower electric leakage and stronger electrostatic discharge(ESD) characteristic owning to the lower threading dislocation density (TDD). © 2015, SCIENCE PRESS. All right reserved.

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