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Dong D.,Xi'an University of Science and Technology | Shi H.,Xi'an University of Science and Technology | Jiang B.,Xi'an University of Science and Technology | Lu Y.,Xi'an University of Science and Technology | Zhang Y.,Xian Huanghe Photovoltaic Technology Co.
Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society | Year: 2013

A series of N-type a-Si:H films were prepared by a plasma enhanced chemical vapor deposition method at different PH3/SiH4-doped flow ratios. The N-type a-Si:H film with the optimal PH3/SiH4 flow ratio was annealed in vacuum. The influence of PH3/SiH4 flow ratio on the microstructures and properties of a-Si:H films was investigated. The results indicate that the microstructure of N type a-Si:H films has no substantial change, but the electrical properties improves when PH3/SiH4 flow ratio increases. The a-Si:H film sample prepared at an optimal PH3/SiH4 flow ratio of 1.5%. The order degree of the film after vacuum annealing increases. The resistivity of the film after annealing is decreased by 3 orders of magnitude. The annealing treatment of the film has an influence on the crystal structure, thus improving the electrical properties of the film.

Qiao Y.-P.,Xi'an University of Science and Technology | Jiang B.-L.,Xi'an University of Science and Technology | Lu Y.-Y.,Xi'an University of Science and Technology | Niu Y.,Xi'an University of Science and Technology | Zhang Y.,Xian Huanghe Photovoltaic Technology Co.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2013

A series of a-Si:H films with different flow rates of H2 was prepared by the DC magnetron sputtering. The influence of flow rates on the microstructure and the properties of the films was analyzed. The results showed that as the flow rates of H2 increasing, the growing rate of the films decreased while the order degree of partial arrangement of Si atoms increased, which also improved the structure and the nanocrystalline grains appeared in the film. Meanwhile, the optical properties of the films showed significant change, and the visible light transmittance increase, while the optical band gap increased first and then decreased. The best flow rates of H2 to prepare a-Si:H films is 15 sccm.

Yang H.,Xi'an Jiaotong University | Wang H.,Xi'an Jiaotong University | Cao D.,Xi'an Jiaotong University | Sun D.,XiAn Huanghe Photovoltaic Technology Co. | Ju X.,XiAn Huanghe Photovoltaic Technology Co.
International Journal of Photoenergy | Year: 2015

During the course of solar module encapsulation, the output power of crystalline silicon solar module is less than the sum of the maximum output power of the constituents because of power loss. So it is very important to investigate the power loss caused by encapsulation materials and module production process. In this paper, the power loss of crystalline silicon solar module is investigated by experiments systematically for the first time. It is found that the power loss is mainly caused by the resistance of ribbon and mismatch of solar cells; the total power loss is as high as 3.93% for solar module composed of 72 cells (125 mm × 125 mm) connected in series. Analyzing and reducing the power losses are beneficial to optimizing encapsulation process for the solar module. The results presented in this study give out a direction to decreasing power loss and optimizing encapsulation process of crystalline silicon solar module. © 2015 Hong Yang et al.

Xie Y.,Northwestern Polytechnical University | Jie W.-Q.,Northwestern Polytechnical University | Wang T.,Northwestern Polytechnical University | Cui Y.,Xian Huanghe Photovoltaic Technology Co. | And 3 more authors.
Gongneng Cailiao/Journal of Functional Materials | Year: 2013

Catalyst-free ZnO thin nanowires were epitaxially grown on a-plane sapphire using a seed layer. X-ray diffraction and temperature dependent temperature photoluminescence (PL) measurements confirm the desired epitaxial relationship and very high crystalline and optical quality. The luminescent peak at 3.37737 eV was assigned to be free exciton luminescence by temperature dependent PL, Vashni model fitted well of the peak shift of the free exciton while from 60 K to 150 K Vina model fitted better. Through the donor-accepter pair peak at 3.29 eV, the net donor carrier concentration was calculated to be 1.8×1018 cm-3, which fairly comparable to other electrical measurement.

Wang X.,Huazhong University of Science and Technology | Dou W.-J.,Xian Huanghe Photovoltaic Technology Co. | Qin Y.-X.,Huazhong University of Science and Technology | Qin Y.-X.,Xian Huanghe Photovoltaic Technology Co. | Ju X.-B.,Xian Huanghe Photovoltaic Technology Co.
Guangzi Xuebao/Acta Photonica Sinica | Year: 2014

The matching property of polycrystalline wafers phosphorus diffusion and laser doping process was studied. Nanosecond pulsed laser with a wavelength of 532 nm was used to conduct laser scanning doping on polycrystalline wafers which remains phosphorosilicate glass after diffusion. The sheet resistance decreases about 50%, and with the increasing of laser power, more phosphorus atoms diffuse to polycrystalline silicon, and the sheet resistance decreases more significantly. The external quantum efficiency of the conventional solar cells and laser-doped solar cells was tested, and for the band of 340~480 nm, the EQE of laser-doped cells increased by 18% to 5% compared to the conventional solar cells. The photoelectric conversion characteristics of laser-doped polycrystalline silicon cells were studied, and the failure characteristics under high laser power were analyzed. With the using of optimization of laser doping polycrystalline silicon solar cell process technology, the average photoelectric conversion efficiency of solar cells achieves 17.11%, which is 0.34% higher than that of the conventional cells. The highest efficiency achieves 17.47%. Laser doping process is simple, and conversion efficiency increases significantly, so this process makes it easy to realize industrialization.

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