Xian Focuslight Optoelectronics Technology Co.

Fengcheng, China

Xian Focuslight Optoelectronics Technology Co.

Fengcheng, China

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Zhang Y.,CAS Xi'an Institute of Optics and Precision Mechanic | Wang J.,CAS Xi'an Institute of Optics and Precision Mechanic | Wu D.,Xian Focuslight Optoelectronics Technology Co. | Yang K.,Xian Focuslight Optoelectronics Technology Co. | And 3 more authors.
Zhongguo Jiguang/Chinese Journal of Lasers | Year: 2010

A new high power single emitter laser (F-mount) is reported. This package structure is different from the commercial products structure with C-mount, and it has an advantage of higher thermal conduction. The maximum output optical power of 13.3 W through this package structure is obtained under the testing condition of continuous waves (CW) at 20°C and the laser can still work well. There was no catastrophic mirror-damage (COMD) occurred on it. The maximum output optical power of 30.8 W is obtained under the testing condition of quasi-continuous wave (QCW). Moreover, the following parameters are calculated with coefficient of wavelength-shift versus temperature of 0.278 nm/°C, thermal resistance of 3.18 K/W, the characteristic temperature of 135 K at the threshold current at room temperature, the characteristic temperature of 743 K for the differential efficiency at room temperature. It has lower thermal resistance and better heat sink capability and higher output power than commercial single emitter laser packaged with C-mount structure.


Ding X.,Xi'an Jiaotong University | Zhang P.,CAS Xi'an Institute of Optics and Precision Mechanic | Xiong L.,CAS Xi'an Institute of Optics and Precision Mechanic | Ou X.,Xi'an Jiaotong University | And 5 more authors.
Zhongguo Jiguang/Chinese Journal of Lasers | Year: 2011

With the improvement of power, efficiency, reliability, manufacturability, and cost of high power semiconductor laser, many new applications are being enabled. Most of the semiconductor laser bars are packaged with the indium solder. However, some small voids are created during the packaging process, which will be gradually enlarged by the electromigration and electrothermal migration of the indium solder. Voids may cause local overheating near the facets of the laser. Therefore it is necessary to study the thermal behavior of semiconductor laser bars with voids in the solder layer. The thermal behavior of a single-bar CS-packaged 40 W 808 nm semiconductor laser with voids in the solder layer is studied and the relationship between temperature and voids size is analysed. The distribution of voids is predicted according to the space spectrum of a 40 W 808 nm semiconductor laser bar and the simulation results. It is found that the simulation results agree well with the measurement of the scanning acoustic microscope (SAM) image of solder layer.


Zhang E.,CAS Xi'an Institute of Optics and Precision Mechanic | Zhang Y.,CAS Xi'an Institute of Optics and Precision Mechanic | Xiong L.,CAS Xi'an Institute of Optics and Precision Mechanic | Wang J.,CAS Xi'an Institute of Optics and Precision Mechanic | And 7 more authors.
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | Year: 2011

In order to promote the performance and power of high-power semiconductor lasers, double-faced thermal conduction technology was used, thermal design and packaging design were theoretically analyzed and optimized, which greatly improved the power of micro-channel water cooled vertical stack and single bar semiconductor lasers. The power of 808 nm 20 bars vertical stack semiconductor laser reaches 2000 W under the continuous wave (CW) condition, the average power of each bar reaches 100 W. The experimental data of LIV character, spectrum character, facula and smile of near field, the spreading angle and direction of semiconductor laser were obtained which showed the excellent performance of this semiconductor lasers. Also the life-time test experiment was carried out and the result shows the good performance. The high-power semiconductor lasers will be used in many application fields.

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