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Qi Z.,Huazhong University of Science and Technology | Li S.,Huazhong University of Science and Technology | Li S.,Xiamen sanAn Optoelectronics Co. | Sun S.,Huazhong University of Science and Technology | And 6 more authors.

An effective approach for growing large-scale, uniformly aligned ZnO nanorods arrays is demonstrated. The synthesis uses a GaN quantum dot (QD) template produced by a self-assembled Stranski-Krastanow mode in metal organic chemical vapor deposition, which serves as a nucleation site for ZnO owing to the QD's high surface free energy. The resultant ZnO nanorods with uniform shape and length align vertically on the template, while their density is easily tunable by adjusting the density of GaN QDs, which can be adjusted by simply varying growth interruption. By controlling the density of ZnO nanorod arrays, their optical performance can also be improved. This approach opens the possibility of combining one-dimensional (1D) with 0D nanostructures for applications in sensor arrays, piezoelectric antenna arrays, optoelectronic devices, and interconnects. © 2015 IOP Publishing Ltd. Source

Qi Z.,Huazhong University of Science and Technology | Li S.,Huazhong University of Science and Technology | Li S.,Xiamen sanAn Optoelectronics Co. | Li S.,Tianjin Sanan Optoelectronics Co. | And 6 more authors.
Journal of Electronic Materials

The influences of the different growth methods of GaAs cap layer on the self-assembled InAs quantum dots were investigated via photoluminescence and transmission electron microscopy. A two-step growth technique, consisting of a low temperature pulsed atomic layer epitaxy and a high temperature conventional continuous growth method, could improve the surface morphology and photoluminescence intensity due to the enhancement of Ga atomic mobility and the reduction in dislocation density. Furthermore, the photoluminescence peak shows a red shift instead of a blue shift due to the strain relaxation. © 2015 The Minerals, Metals & Materials Society Source

Guijiang L.,Xiamen University | Guijiang L.,Xiamen sanAn Optoelectronics Co. | Jyhchiarng W.,Xiamen sanAn Optoelectronics Co. | Meichun H.,Xiamen University
Journal of Semiconductors

A typical GaInP/GaInAs/Ge tandem solar cell structure operating under AM0 illumination is proposed, and the current-voltage curves are calculated for different recombination velocities at both front and back-surfaces of the three subcells by using a theoretical model including optical and electrical modules. It is found that the surface recombination at the top GaInP cell is the main limitation for obtaining high efficiency tandem solar cells. © 2010 Chinese Institute of Electronics. Source

Bi J.,Xiamen sanAn Optoelectronics Co. | Bi J.,Xiamen University | Lin G.,Xiamen sanAn Optoelectronics Co. | Liu J.,Xiamen sanAn Optoelectronics Co. | And 5 more authors.
AIP Conference Proceedings

On the way to the industrial application of inverted metamorphic triple junction solar cell, the 1 eV In0.3Ga0.7As subcell epitaxial grown by MOCVD on InxGa1-xP graded buffer layers were reported here. The structural analysis of XRD, SEM, TEM, and SIMS were carried out. The I-V and EQE characterizations were measured under the 1000 suns AM 1.5D conditions. Those results extended the industrial vista of the high efficiency, low dislocation density, current matching solar cells. © 2012 American Institute of Physics. Source

Lin G.J.,Xiamen sanAn Optoelectronics Co. | Wang L.J.,Xiamen sanAn Optoelectronics Co. | Liu J.Q.,Xiamen sanAn Optoelectronics Co. | Xiong W.P.,Xiamen sanAn Optoelectronics Co. | And 3 more authors.
Procedia Environmental Sciences

High concentration multi-junction solar cells are starting to be commercialized. However, few studies about their reliability have been carried out. In this paper, we present the results of accelerated aging tests performed on Sanan high concentration solar cells. It is found that the relative power degradations of tested samples are within 10%. For comparison, commercial cells from Emcore are also tested under similar conditions, and the results are similar with that from Sanan. The tested electrical insulations of these cells before and after thermal cycling test also meet requirements from IEC 62108. © 2011 Published by Elsevier Ltd. Source

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