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Grenoble, France

Laplace F.,X REL Semiconductor | Montmayeur X.,X REL Semiconductor | Thomas J.,X REL Semiconductor | Picun G.,X REL Semiconductor
Proceedings - IMAPS International Conference and Exhibition on High Temperature Electronics, HiTEC 2012 | Year: 2012

In this paper we present the operation of the XTR30011 device, a high-temperature, versatile, PWM controller with in-specification performance achieved fivrn -60°C to 230°C using a CMOS SOI process. The circuit features a voltage-mode PWM controller that can be used in Buck-mode converters as well as in Boost, Buck-boost, Push-pull and Flyback Several functional features are implemented including duty-cycle limitation allowing cycle-by-cycle current limitation, hiccup short-circuit protection and complex functionalities for improved efficiency at low load currents. These advanced features for improved efficiency include automatic synchronous-asynchronous mode transition in Buck-mode, pulse skipping logic with adjustable threshold, low-power mode with capability to receiving the 5V converter output voltage. Efficiency in DC-DC converters operated at low load currents is dominated by switching as well as intrinsic consumption losses. The XTR3011, in addition to having a low intrinsic current consumption, allow-s reaching very good efficiencies at low load currents thanks to its functional features. We present here the operation of several functional features and experimental results across temperature of the efficiency in several configuration modes, and in particular for low load currents. Source


Gras D.,X REL Semiconductor | Pautrel C.,X REL Semiconductor | Fanaei A.,X REL Semiconductor | Thepaut G.,X REL Semiconductor | And 3 more authors.
SAE International Journal of Passenger Cars - Electronic and Electrical Systems | Year: 2014

In this paper we present a set of integrated circuits specifically designed for high temperature power applications such as isolated power transistor drivers and high efficiency power supplies. The XTR26010 is the key circuit for the isolated power gate drive application. The XTR26010 circuit has been designed with a high focus in offering a robust, reliable and efficient solution for driving a large variety of high-temperature, high-voltage, and high-efficiency power transistors (SiC, GaN, Si) existing in the market. The XTR40010 is used for isolated data communication between a microcontroller or a PWM controller and the power driver (XTR26010). The isolated power transistor driver features a dual turn-on channel, a turn-off channel and a Miller Clamp channel with more than 3A peak current drive strength for each channel. The dV/dt immunity between XTR26010 and XTR40010 exceeds 50kV/μs. To demonstrate the performance and reliability at system level, a half-bridge driver test-board has been developed for driving SiC MOSFETs. For supplying this test-board, a compact isolated flyback power supply with 82% power efficiency has been developed thanks to the versatile voltage mode PWM controller XTR30010 and the XT2N0825 N-Channel MOSFET. The full system including an isolated half-bridge gate driver and associated isolated power supply has been successfully tested up to 200°C, up to 600kHz of switching frequency and 600V high-voltage bus. The 200°C limitation is due to passives, PCB material, and the solder paste used for the test board. However, all used X-REL active circuits have been qualified within specifications well above 230°C. © 2014 SAE International. Source


Gras D.,X REL Semiconductor | Pautrel C.,X REL Semiconductor | Fanaei A.,X REL Semiconductor | Thepaut G.,X REL Semiconductor | And 3 more authors.
International Conference and Exhibition on High Temperature Electronics, HiTEC 2014 | Year: 2014

In this paper we present a highly integrated, high-temperature isolated, half-bridge power gate driver demo board, based on turnkey X-REL chipset: XTR26010 (High-Temperature Intelligent Gate Driver), XTR40010 (High- Temperature Isolated Two Channel Transceiver), XTR30010 (High-Temperature PWM Controller), and XTR2N0825 (High-Temperature 80V N-Channel Power MOSFET). The XTR26010 is the key circuit in this chipset for power gate drive application. The XTR26010 circuit has been designed with a high focus in offering a robust, reliable and efficient solution for driving a large variety of hightemperature, high-voltage, and high-efficiency power transistors (SiC, GaN, Si) existing in the market. Furthermore, the XTR26010 circuit implements an unprecedented functionality for high-temperature drivers allowing safe operation at system level by preventing any cross-conduction between high-side and low-side switches, through isolated communication between high-side and low-side drivers. The XTR40010 is used for isolated data communication between a microcontroller or a PWM controller with the power driver (XTR26010). For supplying the half-bridge gate driver, a compact isolated flyback power supply has been developed thanks to the versatile voltage mode PWM controller XTR30010 and the XT2N0825 N-Channel MOSFET. The full system has been successfully tested while driving different brands of SiC MOSFETs up to Ta=200°C, 600kHz of switching frequency and 600V high-voltage bus (limited by isolation transformers used). The demo board presented can be easily modified to drive other SiC and GaN transistors available in the market. The 200°C limitation of the demo board is due to passives, PCB material, and the solder paste used. However, all X-REL active circuits have been qualified within specifications well above 230°C. Source


Duse Y.,X REL Semiconductor | Laplace F.,X REL Semiconductor | Joubert N.,X REL Semiconductor | Montmayeur X.,X REL Semiconductor | And 5 more authors.
International Conference and Exhibition on High Temperature Electronics Network, HiTEN 2013 | Year: 2013

We present in this paper two new products for high-temperature, low-voltage (2.8V to 5.5V) power management applications. The first product is an original implementation of a monolithic low dropout regulator (XTR70010), able to deliver up to 1A at 230°C with less than 1V of dropout. This new voltage regulator can source an output current level up to 1.5A. The regulated output voltage can be selected among 32 preset values from 0.5V to 3.6V in steps of 100mV, or it can be obtained with a pair of external resistors. The circuit integrates complex analog and digital control blocks providing state of the art features such as UVLO protection, chip enable control, soft start-up and soft shut-down, hiccup short-circuit protection, customer selectable thermal shut-down, input power supply protection, output overshoot remover and stability over an extremely wide range of load capacitances. The circuit offers a fair ±2% absolute accuracy and is guaranteed latch-up free. The second product is an advanced high-temperature, low-power, digitally trimmable voltage reference (XTR75020). Thanks to a custom, 1-wire serial interface, the absolute precision and the temperature coefficient can be adjusted in order to obtain an accuracy better than 0.5% with a temperature coefficient bellow ±20ppm/°C. Onchip OTP memory for trimming of absolute value and temperature coefficient makes the circuit extremely accurate and almost insensitive to drifts over time and temperature. The circuit features a class AB output buffer able to source or sink up to 5mA and remains stable with any load capacitance up to 50μF. The XTR75020 has nine preset possible output voltages. The source and sink short circuit current always remains bellow 25mA. The quiescent current consumption is 300μA typical at 230°C while the standby current is, in all cases, under 20μA. Both devices are designed on a latch-up free silicon-on-insulator process. Source


Picun G.,X REL Semiconductor | El-Falahi K.,X REL Semiconductor | Pautre C.,X REL Semiconductor | Duse Y.,X REL Semiconductor | And 7 more authors.
IMAPS International Conference on High Temperature Electronics Network, HiTEN 2015 | Year: 2015

This paper presents the problematic associated to the design of a complete motor drive, exposing all available and missing blocks at this moment. We proceed by dividing the power drive into basic functions - control, different power supplies, isolated communication, controller interfacing, current monitoring - and we present for each of these functions an implementation example. Implementation examples shown are based on high-temperature X-REL parts such as XTR26020 Isolated Intelligent Gate Driver, XTR40010 Isolated Two Channel Transceiver, XTR30010 PWM Controller, XTR70010 and XTR70020 Low-dropout Linear Regulators and XTR50010 Bidirectional Multichannel Level Translator. A drive solution based on the XTR26020, presented for the first time in this paper, is explained and compared against previous art. Main characteristics of the new linear regulator XTR70020 are presented, showing the best-in-class dropout voltage, which outperforms the closest competitor by a factor of three. For all parts featured, tests results at an ambient temperature up to 230°C (even higher in some cases) are presented. Source

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