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Erfurt-bindersleben, Germany

Patent
X-FAB Semiconductor Foundries | Date: 2013-03-15

A semiconductor device comprising:


Patent
X-FAB Semiconductor Foundries | Date: 2015-11-04

A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and the at least one doped portion meet. The device further includes at least one additional portion, wherein the at least one additional portion is located such that, when the doped portions and the at least one additional portion are biased, the electrical potential lines leave the semiconductor drift portion homogeneously.


Patent
X-FAB Semiconductor Foundries | Date: 2014-10-20

A window opening in a semiconductor component is produced on the basis of a gate structure which serves as an efficient etch resist layer in order to reliably etch an insulation layer stack without exposing the photosensitive semiconductor area. The polysilicon in the gate structure is then removed on the basis of an established gate etching process, with the gate insulation layer preserving the integrity of the photosensitive semiconductor material.


Patent
X-FAB Semiconductor Foundries | Date: 2013-11-06

A CMOS or bipolar based Ion Sensitive Field Effect Transistor (ISFET) comprising an ion sensitive recess for holding a liquid wherein the recess is formed at least partly on top of a gate of the transistor. There is also provided a method of manufacturing an I on Sensitive Field Effect Transistor (ISFET) utilizing CMOS processing steps, the method comprising forming an ion sensitive recess for holding a liquid at least partly on top of a gate of the transistor.


Patent
X-FAB Semiconductor Foundries | Date: 2012-05-30

An SOI or PSOI device including a device structure having a plurality of doped semiconductor regions. One or more of the doped semiconductor regions is in electrical communication with one or more electrical terminals. The device further includes an insulator layer located between a bottom surface of the device structure and a handle wafer. The device has an insulator trench structure located between a side surface of the device structure and a lateral semiconductor region located laterally with respect to the device structure. The insulator layer and the insulator trench structure are configured to insulate the device structure from the handle wafer and the lateral semiconductor region, and the insulator trench structure includes a plurality of insulator trenches.

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