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Zhang Z.,CAS Suzhou Institute of Nano Technology and Nano Bionics | Zhang Z.,University of Chinese Academy of Sciences | Yu G.,CAS Suzhou Institute of Nano Technology and Nano Bionics | Zhang X.,CAS Suzhou Institute of Nano Technology and Nano Bionics | And 16 more authors.
IEEE Transactions on Electron Devices | Year: 2016

This paper investigates the performance of AlGaN/gallium nitride (GaN) MIS high electron mobility transistors (MIS-HEMTs). The gate dielectric layer and the surface passivation layer are formed by the low-pressure chemical vapor deposition (LPCVD) Si3N4. The LPCVD-Si3N4 MIS-HEMTs exhibit a high breakdown voltage (BV) of 1162 V at IDS = 1 μA/mm, a low OFF-state leakage of 7.7×10-12 A/mm, and an excellent ON/OFF-current ratio of ∼1011. Compared with the static ON-resistance of 2.88 mω · cm2, the dynamic ON-resistance after high OFF-state drain bias stress at 600 V only increases to 4.89 mω · cm2,. The power device figure of merit = BV2/RON.sp is calculated to be 469 MW · cm-2. The LPCVD-Si3N4/GaN interface state density is in the range of (1.4-5.3) × 1013 eV-1 cm-2 extracted by the conventional conductance method. Finally, the gate insulator degradation of GaN-based MIS-HEMTs is analyzed by time-dependent dielectric breakdown test. The lifetime is extrapolated to 0.01% of failures after ten years at 300 K by fitting the data with a power law to a gate voltage of 10.1 V. © 2016 IEEE. Source


Liu S.,Chongqing Normal University | Yu G.,CAS Suzhou Institute of Nano Technology and Nano Bionics | Fu K.,CAS Suzhou Institute of Nano Technology and Nano Bionics | Tan S.,CAS Suzhou Institute of Nano Technology and Nano Bionics | And 7 more authors.
Electronics Letters | Year: 2014

An AlGaN/GaN metal-oxide semiconductor (MOS) high-electron mobility transistor (HEMT) on silicon substrate was obtained with 8 nm Al 2O3 gate dielectric films grown using atomic layer deposition. The MOS-HEMT shows a low specific on-resistance of 0.57 Ω·mm2, a large maximum saturate drain current of 12.5 A and a minimal threshold hysteresis of 0.05 V. Low specific on-resistance, large maximum saturate drain current and minimal threshold hysteresis show that the fabricated MOS-HEMT is very suitable for power switching applications. © The Institution of Engineering and Technology 2014. Source


Wang W.,CAS Suzhou Institute of Nano Technology and Nano Bionics | Cai Y.,CAS Suzhou Institute of Nano Technology and Nano Bionics | Zhang Y.,CAS Suzhou Institute of Nano Technology and Nano Bionics | Huang H.,CAS Suzhou Institute of Nano Technology and Nano Bionics | And 3 more authors.
Physica Status Solidi - Rapid Research Letters | Year: 2014

In this Letter, a GaN-based high-power (HP) single-chip (SC) large-area LED with parallel and series network structure is fabricated. The optical characteristics of the HP-SC LED is investigated. Driven at 600 mA, the optical output power of the HP-SC LED chip is measured to be 9.7 W, corresponding to an EQE of 26.4%, which is 19.6% lower than that of the standard small LED cell due to both the lateral light-extraction efficiency degradation and the self-heating effect. A statistical analysis was carried out to investigate the yield of the fabricated HP-SC LEDs, the experimental results agree with the theoretical calculations very well, validating the feasibility of this design on the production yield for the large-area LEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source


Wang W.,CAS Suzhou Institute of Nano Technology and Nano Bionics | Wang W.,CAS Institute of Semiconductors | Wang W.,University of Chinese Academy of Sciences | Cai Y.,CAS Suzhou Institute of Nano Technology and Nano Bionics | And 3 more authors.
Japanese Journal of Applied Physics | Year: 2013

In this paper, we report a single-chip large area (5 - 5mm2) InGaN/GaN blue LED with the optical output power of 4.3 W. This device consists of 24-stages small LED-cells that are connected in series. Driven at 500 mA, the forward voltage is measured to be 87.2 V with a reverse current of 2:63 ± 10 -9 A at -120 V. The comparison of two different cooling schemes, i.e., with/without fan cooling, was made; the results suggest that the thermal convection between the heat sink and air is more critical. A simple white LED package was also tried by covering silicone gel mixed with yttrium aluminum garnet (YAG) phosphor. The luminous flux and the correlated color temperature (CCT) were measured to be 1090 lm and 5082 K, when the device was driven at 500 mA. This report also demonstrated the feasibility of the application for camera flash. © 2013 The Japan Society of Applied Physics. Source


Wang W.,CAS Suzhou Institute of Nano Technology and Nano Bionics | Wang W.,CAS Institute of Semiconductors | Wang W.,University of Chinese Academy of Sciences | Cai Y.,CAS Suzhou Institute of Nano Technology and Nano Bionics | And 3 more authors.
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2012

Sidewall profiles and etch rate of dry etched GaN mesas were investigated by using a chlorine based inductively coupled plasma (ICP) system. The process conditions were carefully selected by changing ICP ion source power, RF power, gas flow, and chamber pressure. The experimental results show that a very wide sidewall profile angle could be achieved from 23° to 83° at certain optimized conditions, which provide a helpful process guideline for fabricating GaN based devices. Source

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