Wurth Elektronik Research GmbH WERes

Schwäbisch Hall, Germany

Wurth Elektronik Research GmbH WERes

Schwäbisch Hall, Germany

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Hariskos D.,Center for Solar Energy and Hydrogen Research | Menner R.,Center for Solar Energy and Hydrogen Research | Jackson P.,Center for Solar Energy and Hydrogen Research | Paetel S.,Center for Solar Energy and Hydrogen Research | And 8 more authors.
Progress in Photovoltaics: Research and Applications | Year: 2012

We report on a new chemical bath deposition kinetics for the zinc sulfide oxide Zn(S,O) buffer layer as used in Cu(In,Ga)Se 2 (CIGS)-based solar cells. The new approach allows at high rates a better control of the growth kinetics, the step coverage on the rough CIGS surface, and the [S]/([S]+[O]) ratio in the film. Layer thicknesses as needed for buffer layer applications can be grown at moderate temperatures of 60-80 °C within 5-8 min. Applying this high-rate Zn(S,O) buffer in CIGS/Zn(S,O)/(Zn,Mg)O/ZnO:Al devices, we realized highly efficient small area solar cells, 30 × 30 cm 2 submodules, and 60 × 120 cm 2 full-size modules. Copyright © 2012 John Wiley & Sons, Ltd.

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