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Liao Y.,Nanjing University | Ji X.,Nanjing University | Guo Q.,Wuhan Xinxin Semiconductor Manufacturing Corporation | Yan F.,Nanjing University
Advances in Condensed Matter Physics | Year: 2015

We examine the impact of negative bias temperature (NBT) stress on the fuctuations in ID and IG for deeply scaled pMOSFETs and fnd that the relative high NBT stress triggers IG-RTN and ID-step. Trough the analysis of the field dependence of emission constant and the carrier separation measurement, it is found that under the relative high NBT stress some traps keep charged state for very long time, as observing step-like behaviors in ID, while other traps emit charged holes to the gate side through TAT process, which originate both ID-step and ID-RTN. Copyright © 2015 Yiming Liao et al.


Tan C.,Applied Materials | Xiong S.,Wuhan Xinxin Semiconductor Manufacturing Corporation | Zhao R.,Applied Materials | Xu Y.,Applied Materials | And 3 more authors.
ECS Transactions | Year: 2010

In this paper, a silicon CMP process has been developed inside semiconductor fabrication to reclaim bare silicon wafers for cost and time reductions. Firstly, the high level defect after CMP was encountered and mainly particle; after related polishing and cleaning processes were optimized, the defect count was much reduced but still higher than the specification; finally, the defect count was dramatically decreased and met the specification by adding a surfactant (TMAH) in polishing. The effect of surfactant on defect reduction is also discussed in this paper. ©The Electrochemical Society.


Zhou J.,Huazhong University of Science and Technology | Chen Y.,Huazhong University of Science and Technology | Zhou W.,Huazhong University of Science and Technology | Miao X.,Huazhong University of Science and Technology | And 6 more authors.
Applied Surface Science | Year: 2013

Phase change material with superlattice-like structure (SLL) is one of the most emerging materials for phase change memory device. A rough etching profile, isotropic, and serious surface damage limit the application of the conventional lift-off process. A well controlled etching process to achieve high etch rate, smooth surface, vertical and nanometer-sized pattern for SLL is required for the mass production of the phase change memory devices. In this study, the etch rates, surface roughness and sidewall angles of SLL GeTe/Sb2Te 3 films were investigated by the inductively coupled plasma etching process with various etch parameters including gas ratio, chamber pressure, bias power and coil radio frequency (RF) power. The etch selectivity of SLL to SiO2 and to photo-resist were characterized. The X-ray photoelectron spectroscopy (XPS) of etched surfaces confirmed the etch mechanism of the SLL films in Cl2/Ar chemistry. 86 nm-sized patterns of SLL were fabricated using optimized etching parameters. In addition, an etched SLL film was integrated into a "T" type PCRAM cell, with a 50 nm feature size. This cell operated successfully and a RESET current of only 145 μA was obtained. ©2013 Elsevier B.V. All rights reserved.


Zhou J.,Huazhong University of Science and Technology | Ji H.,Huazhong University of Science and Technology | Lan T.,Huazhong University of Science and Technology | Yan J.,Wuhan Xinxin Semiconductor Manufacturing Corporation | And 2 more authors.
Journal of Electronic Materials | Year: 2014

Phase change random access memory (PCRAM) affords many advantages over conventional solid-state memories due to its nonvolatility, high speed, and scalability. However, high programming current to amorphize the crystalline phase through the melt-quench process of PCRAM, known as the RESET current, poses a critical challenge and has become the most significant obstacle for its widespread commercialization. In this work, an excellent negative tone resist for high resolution electron beam lithography, hydrogen silsesquioxane (HSQ), has been investigated as the insulating material which locally blocks the contact between the bottom electrode and the phase change material in PCRAM devices. Fabrications of the highly scaled HSQ nanopore arrays (as small as 16 nm) are presented. The insulating properties of the HSQ material are studied, especially under e-beam exposure plus thermal curing. Some other critical issues about the thickness adjustment of HSQ films and the influence of the PCRAM electrode on electron scattering in e-beam lithography are discussed. In addition, the HSQ material was successfully integrated into the PCRAM devices, achieving ultra-low RESET current (sub-100 μA), outstanding on/off ratios (~50), and improved endurance at tens of nanometers. © 2014, The Minerals, Metals & Materials Society.


Ma L.-J.,Nanjing University | Ji X.-L.,Nanjing University | Chen Y.-C.,Nanjing University | Xia H.-G.,Nanjing University | And 3 more authors.
Chinese Physics Letters | Year: 2014

The recently developed four Rsdextraction methods from a single device, involving the constant-mobility method, the direct Id- Vgsmethod, the conductance method and the Y-function method, are evaluated on 32 nm n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs). It is found that Rsdachieved from the constant-mobility method exhibits the channel length independent characteristics. The L-dependent Rsdextracted from the other three methods is proven to be associated with the gate-voltage-induced mobility degradation in the extraction procedures. Based on L-dependent behaviors of Rsd, a new method is proposed for accurate series resistance extraction on deeply scaled MOSFETs. © 2014 Chinese Physical Society and IOP Publishing Ltd.

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