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Ibaraki, Japan

Xu Y.,WPIMANA | Liu C.,WPIMANA | Scheideler W.,Duke University | Li S.,WPIMANA | And 5 more authors.
IEEE Electron Device Letters | Year: 2013

Close correlation between low-frequency noise and charge transport in pentacene transistors is observed. The trap density evolving with pentacene deposition reveals transformation of growth phase and different transport mechanisms. It explains the greatly altered mobility and contact resistance in which the upper surface's trapping plays an important role. Inspecting contact noise shows high density of traps at contacts that result possibly from pyramid like growth of pentacene or contact damage or both. © 2013 IEEE. Source

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