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Pohang, South Korea

Patent
Wonik Ips Co. | Date: 2013-11-21

The present invention relates to a substrate processing apparatus: including a chamber comprising a body having an inner space and a top lid provided on an upper part of the body, the top lid having at least one gas input port; a substrate supporting unit rotatably installed inside the chamber to support a plurality of substrates; and a gas injection device comprising a central injection unit provided on an upper part of the substrate supporting unit to inject a gas into a central region of the substrate supporting unit, a source gas injection unit provided around the central injection unit to inject a source gas into the substrate supporting unit, a reaction gas injection unit provided around the central injection unit to inject a reaction gas into the substrate supporting unit and a purge gas injection unit disposed between the source gas injection unit and the reaction gas injection unit; wherein at least one of the source gas injection unit and the reaction gas injection unit comprises a main injection unit to inject a gas into the substrate supporting unit and a gas-injecting projection projecting in a intersectional direction to the main injection unit between the central injection unit and the main injection unit, the main injection unit and the projection are divided into a plurality of regions along a circumference, and the main injection unit or the projection in at least one region inject an amount of gas different than those of the other regions. The substrate processing apparatus according to the present invention can enhance uniformity and reliability of a thin film.


Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber in which a processing space is defined, a substrate support disposed in the chamber and supporting a substrate; and an upper electrode to which a radio frequency (RF) power is applied, the upper electrode facing the substrate support. The substrate support includes a plurality of ground electrodes spaced apart from each other and independently controlled so that plasma is uniformly generated to an edge area of the substrate support between the upper electrode and the substrate support. The substrate processing apparatus may uniformly control plasma distribution or density on a substrate and a periphery of the substrate and may uniformly control plasma distribution or density in the central area of the substrate and the edge area of the substrate.


Patent
Wonik Ips Co. | Date: 2012-10-30

Provided are a substrate treating apparatus and method of manufacturing a phase-change layer having superior deposition characteristics. The substrate treating method of manufacturing a phase-change memory includes forming a bottom electrode on a substrate on which a pattern is formed, performing surface treating for removing impurities generated or remaining on a surface of the substrate while the bottom electrode is formed, performing nitriding on the surface of the substrate from which the impurities are removed, and successively depositing a phase-change layer and a top electrode on the bottom electrode. The substrate treating apparatus for manufacturing a phase-change memory includes a load lock chamber into/from which a plurality of substrates are loaded or unloaded, the load lock chamber being converted between an atmosphere state and a vacuum state, a nitriding chamber in which nitriding is performed on a surface of a substrate on which a bottom electrode is disposed, the nitriding chamber being coupled to one side of a plurality of sides of the vacuum transfer chamber, and a process chamber in which a phase-change layer is deposited on the surface of the substrate on which nitriding is performed in the nitriding process chamber, the process chamber being coupled to one of the plurality of sides of the vacuum transfer chamber.


Patent
Wonik Ips Co. | Date: 2013-01-17

A solar cell and a fabricating method thereof are provided. In the method of fabricating the solar cell, a p-type semiconductor substrate on whose light-receiving surface an anti-reflection coating is formed is loaded into a processing chamber. In this case, the p-type semiconductor substrate may be loaded on a substrate support of an apparatus of processing a plurality of substrates along the circumference of the substrate support, in the state where the back surface of the p-type semiconductor substrate faces upward. Then, a back surface field (BSF) layer having the characteristic of Negative Fixed Charge (NFC) is formed with AlO, AN or ALON on the back surface of the p-type semiconductor substrate. At this time, the BSF layer may be formed by simultaneously injecting an Al source gas, a first purge gas, an oxidizing agent gas and/or a ntiriding agent gas, and a second purge gas through injection holes of individual gas injection units while relatively rotating the substrate support with respect to the shower head. Thereafter, a back surface electrode is formed on the BSF layer such that the back surface electrode is electrically connected to the BSF layer.


The present invention relates to a semiconductor manufacturing device, which can be applied in a semiconductor metal interconnection process, and a manufacturing method thereof. The semiconductor manufacturing device includes a loadlock chamber, at least one process chamber, a transfer chamber, and an oxidation preventing gas supply unit. The process chamber processes an annealing process by receiving a substrate. The transfer chamber transfers the substrate between the loadlock chamber and the process chamber. The oxidation preventing gas supply unit supplies oxidation preventing gas into either the transfer chamber or the loadlock chamber.

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