Gyeonggi do, South Korea
Gyeonggi do, South Korea

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The present invention relates to a method of fabricating a nitride film, which may easily control compressive stress while stably maintaining the film quality using the atomic layer deposition, and the nitride film having compressive stress is formed on a substrate by performing a unit cycle at least one time, the unit cycle including: a first step of providing a source gas on the substrate to absorb at least of the source gas on the substrate; a second step of providing a first purge gas on the substrate; a third step of forming a unit deposition film on the substrate by providing the substrate with a stress controlling gas including a nitrogen gas (N_(2)) and a reaction gas containing nitrogen components (N) other than the nitrogen gas (N_(2)) in a plasma state; and a fourth step of providing a second purge gas on the substrate.


Patent
Wonik Ips Co. | Date: 2013-06-18

The present invention relates to a method for manufacturing a thin film, comprising the steps of: preparing a substrate; preparing a raw material comprising a compound consisting of SiH2, as a basic structure thereof, and a functional group, including at least one of carbon, oxygen, and nitrogen, linearly bonded to both sides of the basic structure; vaporizing the raw material, and loading the substrate into a chamber; and providing the vaporized raw material to the inside of the chamber. Furthermore, the present invention is capable of depositing a high-quality thin film under various processing conditions; manufacturing a thin film within a wide range of processing temperatures, processing pressures, etc.; and utilizing various methods and equipment for manufacturing a thin film.


Patent
Wonik Ips Co. | Date: 2013-06-18

The present invention includes the steps of: preparing a substrate; preparing a raw material including organic silane having CxHy (here, 1x9, 4y20, Y>2X) as a functional group; vaporizing the raw material; loading the substrate to the inside of a chamber; and supplying the vaporized raw material into the chamber. Accordingly, the present invention can manufacture a thin film without degrading the film quality even at low temperatures, and can more reliably and stably manufacture a device for which a low-temperature process is required.


Patent
Wonik Ips Co. | Date: 2014-07-03

Provided are a deposition apparatus and a method of manufacturing a semiconductor device. In the method, a reaction chamber provided with a gaseous source supply unit and a liquid source supply unit is prepared, and an etch stop layer is formed on a substrate by using a gaseous source. Then, an interlayer insulation layer is formed on the etch stop layer by using a vaporized liquid source and a vaporized dopant source. In this way, the etch stop layer and the interlayer insulation layer are formed in-situ in the same reaction chamber.


Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber in which a processing space is defined, a substrate support disposed in the chamber and supporting a substrate; and an upper electrode to which a radio frequency (RF) power is applied, the upper electrode facing the substrate support. The substrate support includes a plurality of ground electrodes spaced apart from each other and independently controlled so that plasma is uniformly generated to an edge area of the substrate support between the upper electrode and the substrate support. The substrate processing apparatus may uniformly control plasma distribution or density on a substrate and a periphery of the substrate and may uniformly control plasma distribution or density in the central area of the substrate and the edge area of the substrate.


Patent
Wonik Ips Co. | Date: 2015-02-26

The present invention relates to a substrate processing apparatus and a substrate processing method, the substrate processing apparatus including: a load-lock chamber; a transfer chamber disposed on one side of the load-lock chamber; a process chamber disposed on one side of the transfer chamber; and a substrate transfer robot disposed inside the transfer chamber to transfer a substrate between the load-lock chamber and the process chamber, wherein the process chamber includes a plurality of substrate support plates configured to support the substrate, a plurality of gas spray units configured to respectively spray process gases on the plurality of substrate support plates, a turntable configured to transfer the substrate between the plurality of substrate support plates, a first gate through which an unprocessed substrate is taken in, and a second gate through which a processed substrate is taken out; and the substrate transfer robot independently transfers the unprocessed substrate and the processed substrate through the first gate and the second gate, thereby improving substrate processing efficiency.


Patent
Wonik Ips Co. | Date: 2013-11-21

The present invention relates to a substrate processing apparatus: including a chamber comprising a body having an inner space and a top lid provided on an upper part of the body, the top lid having at least one gas input port; a substrate supporting unit rotatably installed inside the chamber to support a plurality of substrates; and a gas injection device comprising a central injection unit provided on an upper part of the substrate supporting unit to inject a gas into a central region of the substrate supporting unit, a source gas injection unit provided around the central injection unit to inject a source gas into the substrate supporting unit, a reaction gas injection unit provided around the central injection unit to inject a reaction gas into the substrate supporting unit and a purge gas injection unit disposed between the source gas injection unit and the reaction gas injection unit; wherein at least one of the source gas injection unit and the reaction gas injection unit comprises a main injection unit to inject a gas into the substrate supporting unit and a gas-injecting projection projecting in a intersectional direction to the main injection unit between the central injection unit and the main injection unit, the main injection unit and the projection are divided into a plurality of regions along a circumference, and the main injection unit or the projection in at least one region inject an amount of gas different than those of the other regions. The substrate processing apparatus according to the present invention can enhance uniformity and reliability of a thin film.


Patent
Wonik Ips Co. | Date: 2013-01-17

A solar cell and a fabricating method thereof are provided. In the method of fabricating the solar cell, a p-type semiconductor substrate on whose light-receiving surface an anti-reflection coating is formed is loaded into a processing chamber. In this case, the p-type semiconductor substrate may be loaded on a substrate support of an apparatus of processing a plurality of substrates along the circumference of the substrate support, in the state where the back surface of the p-type semiconductor substrate faces upward. Then, a back surface field (BSF) layer having the characteristic of Negative Fixed Charge (NFC) is formed with AlO, AN or ALON on the back surface of the p-type semiconductor substrate. At this time, the BSF layer may be formed by simultaneously injecting an Al source gas, a first purge gas, an oxidizing agent gas and/or a ntiriding agent gas, and a second purge gas through injection holes of individual gas injection units while relatively rotating the substrate support with respect to the shower head. Thereafter, a back surface electrode is formed on the BSF layer such that the back surface electrode is electrically connected to the BSF layer.


Patent
Wonik Ips Co. | Date: 2016-06-29

Provided is a substrate processing apparatus capable of improving thickness uniformity. The substrate processing apparatus includes a process chamber including a shower head, a feeding block including a tube to provide a source gas and a reaction gas to the shower head, and a mixing block configured to provide a channel connected between the shower head and the feeding block to mix the source gas and the reaction gas, and the mixing block includes an internal space having a cross-sectional area larger than the cross-sectional area of the tube provided in the feeding block, and a collision part provided on a path of a gas mixture of the source gas and the reaction gas to collide with the gas mixture.


Patent
Wonik Ips Co. | Date: 2012-01-11

Disclosed is an apparatus for manufacturing semiconductors, to be used for various processes in semiconductor manufacture processing, such as the forming of layers on wafers. A tube has a processing space therein and a discharge hole at a side thereof. A boat can be loaded and unloaded through a lower opening of the tube. Susceptors are vertically separated from one another and supported within the boat, have a central hole defined in the respective centers of rotation thereof, and have a plurality of wafers stacked around a central perimeter on the respective top surfaces thereof. A supply tube is installed at the top of the boat and passes through each central hole of the susceptors, and defines discharge holes for discharging processing gas supplied from the outside onto each top surface of the susceptors.

Loading WONIK IPS Ltd. collaborators
Loading WONIK IPS Ltd. collaborators