Taichung, Taiwan
Taichung, Taiwan

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Chuang T.-H.,National Taiwan University | Lin H.-J.,National Taiwan University | Chuang C.-H.,National Taiwan University | Tsai C.-H.,National Taiwan University | And 3 more authors.
Metallurgical and Materials Transactions A: Physical Metallurgy and Materials Science | Year: 2014

Ag-4Pd binary alloy wire has been produced as an alternative to a previously developed Ag-8Au-3Pd ternary alloy wire to meet requirements for high electrical conductivity and low cost. The electrical resistivity of this Ag-4Pd bonding wire, manufactured with a conventional method, is 3.7 μΩ cm, close to the values of traditional 3N Au wire (3.5 μΩ cm) and Pd-coated Cu wire (1.8 μΩ cm). To further improve the performance of this bonding wire, a large amount of annealing twins were introduced in this Ag-4Pd alloy wire through an innovative concept of sequential drawing and multiple annealing processes. The resulting electrical resistivity of this annealing-twinned Ag-4Pd wire is 3.5 μΩ cm. In contrast to the apparent increase in grain size in the conventional Ag-4Pd wire under electrical stressing with a current density of 1.23 × 105 A/cm2 for various times, the grains in this annealing-twinned wire grow much more slowly. The breaking load and elongation of this annealing-twinned Ag-4Pd wire are also higher than those of conventional wire. Furthermore, annealing twins increase the durability to electromigration of this Ag-4Pd wire under electrical stressing with various current densities. © 2014, The Minerals, Metals & Materials Society and ASM International.


Chuang T.-H.,National Taiwan University | Chang C.-C.,National Taiwan University | Chuang C.-H.,National Taiwan University | Lee J.-D.,Wire Technology Co. | Tsai H.-H.,Wire Technology Co.
IEEE Transactions on Components, Packaging and Manufacturing Technology | Year: 2013

Wire bonding on Al pad packages with an innovative annealing twinned Ag-8Au-3Pd alloy wire results in a sufficient interfacial intermetallic layer at the initial as-bonded stage, while its growth during the further temperature cycling test and pressure cooker test is very slow. Even after prolonged high-temperature storage at 150 °C for 500 h, the thickness of its intermetallics is only around 1.7 μm. In contrast, a very thin CuAl 2 intermetallic layer appears at the interface of the Pdcoated Cu wire bonded package, and a thick layer of Au8Al3 intermetallic compounds forms in the Au wire package, which grows to a thickness of around 4.0 μm after high-temperature storage at 150 °C for 500 h. Energy dispersive X-ray spectrometry analyses indicate that AgAl2, Au8Al3, and CuAl2 are the main intermetallic phases formed in the packages bonded with Ag-8Au-3Pd, and Au and Pd-coated Cu wires, respectively. However, an additional Pd-containing Ag2Al layer found at the AgAl2/Al interface of Ag-8Au-3Pd wire bonded package can interrupt its intermetallic reaction, and the annealing twins can further slow the intermetallic growth. © 2011-2012 IEEE.


Chuang T.-H.,National Taiwan University | Wang H.-C.,National Taiwan University | Tsai C.-H.,National Taiwan University | Tsai C.-H.,Wire Technology Co. | And 4 more authors.
Scripta Materialia | Year: 2012

In a Ag-8Au-3Pd wire, a large number of annealing twins can be observed. In contrast to the rapid grain growth in Au and Cu wires during aging at 600°C, the grain size of this Ag alloy wire remained almost unchanged. The annealing twins in this material also possess the dual merits of increasing strength and elongation with aging time, while the electrical resistivity remained constant. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.


Chuang T.-H.,National Taiwan University | Tsai C.-H.,National Taiwan University | Tsai C.-H.,Wire Technology Co. | Wang H.-C.,National Taiwan University | And 4 more authors.
Journal of Electronic Materials | Year: 2012

An innovative Ag-8Au-3Pd bonding wire containing a large amount of annealing twins has been produced. In contrast to the apparent grain growth in a conventional Ag-8Au-3Pd wire during aging at 600°C, the grain size of this annealing-twinned Ag alloy wire remains almost unchanged. The high thermal stability of the grain structure leads to a smaller heat-affected zone near the free air ball of this twinned wire. The annealing twins in this material also result in the dual merits of increased tensile strength and elongation with aging time, which is beneficial for the reliability of wirebonded packages. © 2012 TMS.


Chuang T.-H.,National Taiwan University | Wang H.-C.,National Taiwan University | Chuang C.-H.,National Taiwan University | Lee J.-D.,Wire Technology Co. | Tsai H.-H.,Wire Technology Co.
Journal of Electronic Materials | Year: 2013

An innovative Ag-8Au-3Pd bonding wire with a high twin density has been produced. The grain size of this annealing-twinned wire changes moderately during electrical stressing, unlike that of the conventional grained wire, which increases drastically and even leads to a bamboo structure. In addition, the durability against electromigration of the annealing-twinned Ag-8Au-3Pd alloy wire is higher than that of the conventional grained wire. This higher durability can be ascribed to the surface reconstruction of a stepwise morphology and slow grain growth resulting from the abundance of annealing twins in this wire. © 2012 TMS.


Chuang T.-H.,National Taiwan University | Wang H.-C.,National Taiwan University | Chuang C.-H.,National Taiwan University | Lin H.-J.,National Taiwan University | And 2 more authors.
Metallurgical and Materials Transactions A: Physical Metallurgy and Materials Science | Year: 2013

The durability against electromigration of an annealing twinned Ag-8Au-3Pd wire is about double that of the conventional grained wire under electrical current stressing of 1.23 × 105 A/cm2. During electromigration, a particular morphology of surface reconstruction comprising a stepwise structure and hillocks can be observed in this annealing twinned wire. The stepwise structure, which has been correlated to longer electromigration life, is postulated to result from dislocation slips driven by electron wind collisions and thermal diffusion of metallic atoms. The simultaneous processes of primary and secondary slips in crossing directions cause hillocks to form at the intersections of both slips. The results also indicated that the electrical current could enhance the grain growth in both wires but had an insignificant effect on the formation of annealing twins. © 2013 The Minerals, Metals & Materials Society and ASM International.


A stud bump structure, a package structure thereof and method of manufacturing the package structure are provided. The stud bump structure include a first chip; and a silver alloy stud bump disposed on the substrate, wherein the on-chip silver alloy stud bump includes Pd of 0.0110 wt %, while the balance is Ag. The package structure further includes a substrate having an on-substrate bond pad electrically connected to the on-chip silver alloy stud bump by flip chip bonding.


Patent
Wire Technology Co. | Date: 2013-02-07

A stud bump structure and method for manufacturing the same are provided. The stud bump structure includes a substrate, and a first silver alloy stud bump disposed on the substrate, wherein the first silver alloy stud bump has a weight percentage ratio of Ag:Au:Pd=60-99.98:0.01-30:0.01-10.


The invention provides a composite wire for electronic package, the composite wire including an alloy core member and a plating layer forming on a surface of the alloy core member. The alloy core member is silver-palladium alloy. The plating layer is at least one layer of thin film of pure gold, pure palladium or gold-palladium alloy. The invention also provides a method for manufacturing the composite wire. The method includes steps of: (a) providing a wire rod, (b) forming a wire having a predetermined diameter from the wire rod by a plurality of processes including cold working and annealing and (c) forming a plating layer on a surface of the wire rod before step (b) or forming a plating layer on a surface of the wire after step (b) by electroplating, sputtering or vacuum evaporation.


The invention provides a composite wire for electronic package, the composite wire including an alloy core member and a plating layer forming on a surface of the alloy core member. The alloy core member is silver-gold-palladium alloy. The plating layer is at least one layer of thin film of pure gold, pure palladium or gold-palladium alloy. The invention also provides a method for manufacturing the composite wire. The method includes steps of: (a) providing a wire rod, (b) forming a wire having a predetermined diameter from the wire rod by a plurality of processes including cold working and annealing and (c) forming a plating layer on a surface of the wire rod before step (b) or forming a plating layer on a surface of the wire after step (b) by electroplating, sputtering or vacuum evaporation.

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