Göteborg, Sweden
Göteborg, Sweden

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Grant
Agency: European Commission | Branch: FP7 | Program: CP-FP | Phase: SEC-2012.3.4-5 | Award Amount: 5.13M | Year: 2014

The project will develop a demonstrator for stand-off real-time concealed object detection for future implementations of high throughput security screening for European mass-transit markets and infrastructure security. The technological approach will incorporate a multi-frequency passive submillimetre-wave video camera, coupled with an active 340 GHz 3D imaging radar system. Both systems will be integrated with a suitable set of image forming optics and scanning optomechanics. Sensor data fusion will merge the passive system colour map with the radar topographic map of any concealed items. Automatic Anomaly Detection algorithms will be developed in order to improve automation and to mitigate privacy issues. The system will undergo an end-user demonstration at a European airport. The ethical issues surrounding the use of stand-off body scanners will be evaluated by a group of experts who will provide advice to ensure that the technology will be deployable from an ethical standpoint, facilitating a privacy-by-design approach. The involvement of end-users is of utmost importance. The consortium includes end-users as project partners who will ensure that maximum relevance and impact to the end-users is secured. The consortium will also address the exploitation of the technology developed within the project, especially considering the commercialisation and manufacture of the technology through the several SMEs involved in the project.


Llombart N.,Jet Propulsion Laboratory | Llombart N.,Complutense University of Madrid | Cooper K.B.,Jet Propulsion Laboratory | Dengler R.J.,Jet Propulsion Laboratory | And 5 more authors.
IEEE Transactions on Antennas and Propagation | Year: 2010

We present the design of a reflector system that can rapidly scan and refocus a terahertz beam for high-resolution standoff imaging applications. The proposed optical system utilizes a confocal Gregorian geometry with a small mechanical rotating mirror and an axial displacement of the feed. For operation at submillimeter wavelengths and standoff ranges of many meters, the imaging targets are electrically very close to the antenna aperture. Therefore the main reflector surface must be an ellipse, instead of a parabola, in order to achieve the best imaging performance. Here we demonstrate how a simple design equivalence can be used to generalize the design of a Gregorian reflector system based on a paraboloidal main reflector to one with an ellipsoidal main reflector. The system parameters are determined by minimizing the optical path length error, and the results are validated with numerical simulations from the commercial antenna software package GRASP. The system is able to scan the beam over 0.5 m in cross-range at a 25 m standoff range with less than 1% increase of the half-power beam-width. © 2010 IEEE.


Grant
Agency: European Commission | Branch: FP7 | Program: CP | Phase: SPA.2009.2.2.01 | Award Amount: 2.00M | Year: 2010

Sub-millimetre wave or terahertz heterodyne receivers are key instruments for many space applications. For example, they are required for monitoring of the earths atmosphere or detection of molecules that might be tracers of life on other planets or moons. However, key components of these systems are currently supplied from outside Europe and performance as well as mass and power requirements often prohibit the implementation. The TeraComp project aims at developing European industrial level capability to design and manufacture terahertz front-end electronics based on high frequency Schottky diodes, Heterostructure Barrier Varactor (HBV) diodes and mHEMT MMICs for space and other applications. The prototype components will be integrated into a compact 557 GHz heterodyne receiver and evaluated for space instrument applications. The front-end demonstrator consists of a low noise 557 GHz subharmonic Schottky diode mixer, a 275 GHz Heterostructure Barrier Varactor frequency tripler and a 92 GHz mHEMT power amplifiers and a 15 to 92 GHz 6x multiplier as part of the local oscillator chain. This development will significantly contribute to mass and power reduction and it will improve the performance of terahertz heterodyne receivers. In addition, the dependence on critical technologies and capabilities from outside Europe for future space applications will be reduced.


Drakinskiy V.,Chalmers University of Technology | Sobis P.,Omnisys Instruments AB | Zhao H.,Chalmers University of Technology | Bryllert T.,Chalmers University of Technology | And 2 more authors.
Conference Proceedings - International Conference on Indium Phosphide and Related Materials | Year: 2013

We present the progress of the technological development of a full e-beam based monolithically integrated Schottky diode process applicable for sub-millimetre wave multipliers and mixers. Evaluation of the process has been done in a number of demonstrators showing state-of-the-art performance, including various multiplier circuits up to 200 GHz with a measured flange efficiency of above 35%, as well as heterodyne receiver front-end modules operating at 340 GHz and 557 GHz with a measured receiver DSB noise temperature of below 700 K and 1300 K respectively. © 2013 IEEE.


Dahlback R.,Wasa Millimeter Wave AB | Bryllert T.,Wasa Millimeter Wave AB | Granstrom G.,Gotmic AB | Ferndahl M.,Gotmic AB | And 2 more authors.
IEEE MTT-S International Microwave Symposium Digest | Year: 2016

We present a solution where one single LO chain is used to feed a homodyne FMCW radar transceiver. An InGaAs pHEMT active frequency multiplier MMIC (x8) and a Schottky diode frequency doubler make up the LO chain. The novel Schottky diode based transceiver operates both as a frequency multiplier (x2) and as a sub-harmonic mixer. The modules operate at a center frequency of 340 GHz with a 30 GHz modulation bandwidth. An output power of 0 dBm, an IF noise level of -168 dBm/Hz and a receiver conversion loss of 18 dB is achieved in the band. The form factor of the modules is adapted to build one- or two-dimensional FMCW radar arrays. State of the art system performance is achieved while system complexity, size and cost is significantly reduced. © 2016 IEEE.


Bryllert T.,Chalmers University of Technology | Bryllert T.,Wasa Millimeter Wave AB | Malko A.,Chalmers University of Technology | Vukusic J.,Chalmers University of Technology | And 3 more authors.
IEEE Microwave and Wireless Components Letters | Year: 2012

In this letter, we present a fixed tuned 175 GHz frequency quintupler with 60 mW output power. The peak efficiency is 6.3% and the 3 dB bandwidth is 8 GHz. The multiplier is based on a single Heterostructure Barrier Varactor (HBV) diode that is flip-chip soldered into a microtsrip matching circuit. All the matching is done "on-chip" and there is no need for dc bias. The multiplier block is very compact (25 × 9 × 8 mm 3). © 2006 IEEE.


Malko A.,Chalmers University of Technology | Bryllert T.,Chalmers University of Technology | Bryllert T.,Wasa Millimeter Wave AB | Vukusic J.,Chalmers University of Technology | And 3 more authors.
IEEE Transactions on Terahertz Science and Technology | Year: 2015

We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler (×5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV material structure onto silicon-on-insulator (SOI), a uniform and accurate thickness (20 μm) of the frequency quintupler chip is achieved. In a single stage this device delivers 2.8 mW of output power at 474 GHz, when pumped with 400 mW at 94.75 GHz, corresponding to conversion efficiency of 0.75%. The present device exhibits a 3-dB bandwidth of 4%. © 2014 IEEE.


Malko A.,Chalmers University of Technology | Bryllert T.,Chalmers University of Technology | Bryllert T.,Wasa Millimeter Wave AB | Vukusic J.,Chalmers University of Technology | And 3 more authors.
IEEE Electron Device Letters | Year: 2013

We present an integrated heterostructure barrier varactor frequency tripler on silicon substrate. The InGaAs/InAlAs/AlAs material structure is transferred onto the silicon wafer using low-temperature plasma-assisted bonding. The presented multiplier operates in the W-band (90-110 GHz). The module delivers 22.6 dBm, with a conversion loss of 6 dB, and 9% 3-dB bandwidth. © 1980-2012 IEEE.


Vukusic J.,Chalmers University of Technology | Vukusic J.,Wasa Millimeter Wave AB | Bryllert T.,Chalmers University of Technology | Bryllert T.,Wasa Millimeter Wave AB | And 5 more authors.
IEEE Electron Device Letters | Year: 2012

We present a heterostructure barrier varactor multiplier at 282 GHz. The tripler chip was monolithically fabricated in the InGaAs/InAlAs material system on InP as carrier substrate and mounted in a fix-tuned waveguide block. Standard rectangular waveguides WR-10/WR-3 connect the multiplier chip to the respective input/output of the waveguide block. Measurements produced 31 mW of output power and a minimum conversion loss of 11.6 dB (7% efficiency). The device dimensions and their electrical and thermal influences are also presented. © 2012 IEEE.


Bryllert T.,Wasa Millimeter Wave AB | Bryllert T.,Chalmers University of Technology | Vukusic J.,Chalmers University of Technology | Olsen A.O.,Wasa Millimeter Wave AB | Stake J.,Chalmers University of Technology
IEEE MTT-S International Microwave Symposium Digest | Year: 2010

We present the first demonstration of a broadband Heterostructure Barrier Varactor tripier, designed to cover a major part of the WR-8 waveguide band. The source comprises a waveguide housing, a six-barrier InP-HBV diode flip-chip mounted on an AIN microstrip filter circuit. The conversion loss 3-dB bandwidth was measured to 17 % at a center frequency of 112 GHz. The maximum output power was more than 15 mW for an input power of 300 mW. There are no mechanical tuners or DC-bias, which simplifies assembly and allows for ultra-compact design. © 2010 IEEE.

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