Camas, WA, United States
Camas, WA, United States
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Provided is a split-gate embedded flash memory cell and method for forming the same. The flash memory cell includes split-gate transistors in which the control gate is aligned with respect to the floating gate without the use of a photolithographic patterning operation to pattern the material from which the control gates are formed. An anisotropic blanket etching operation is used to form the floating gates of the split-gate floating gate transistors alongside sidewalls of a sacrificial layer. Local oxidation of silicon (LOCOS) methods are not needed to form the inter-gate dielectric and therefore high integrity is maintained for the floating transistor gates. The floating transistor gates are formed of charge storage material such as silicon nitride, Si_(3)N_(4 )in some embodiments


A statistical process control method for monitoring and controlling semiconductor manufacturing processing operations is provided. For a chosen processing operation, multiple measurement sites are used to generate data of a measurable characteristic that is impacted by and associated with the processing operation. The data from the sites is compared over time and one or more outlier sites are identified. The outlier sites are the sites at which the data values are most divergent from the rest of the data. Algorithms are used to mathematically compare the outlier sites to the other sites to produce a comparative index. The comparative index is monitored graphically or otherwise to identify changes in the processing operation, and corrective actions are taken.


Provided is a fluid dispensing system with a dispense nozzle with a threaded outer surface and a fluid dispensing apparatus with a movable dispenser arm with an opening that includes threaded inner walls that receive the dispense nozzle therein. Also provided is a method for aligning a dispense head in a coating tool. Horizontal alignment is achieved by rotating the dispense nozzle until its tip is in contact with the chuck then laterally adjusting the dispenser arm position so that the tip is positioned over a center of the chuck. Vertical alignment is achieved by rotating the dispense nozzle until an indicia of the dispense nozzle is at the same vertical location as a designated physical feature of the dispenser arm.


A system and method provide for monitoring and controlling fluid flow in semiconductor manufacturing apparatuses. The method and system include a vortex flow meter coupled to a digital readout that displays the measured flow rate and trip point. The flow meter display includes input devices used to adjust the trip point. The system and method provide for sending signals via a custom relay to the semiconductor manufacturing apparatus which is adapted to terminate a processing operation or change the fluid flow if the trip point is tripped. The system and method also provide for sending an electrical signal to a computer by way of a data acquisition unit and a converter. The converter converts the signal to a communication protocol consistent with the computer network and provides fluid flow information and trip point data as a function of time to the computer which then displays such data graphically.


A device, apparatus and method for trapping metal ions and detecting metal ion contamination in a solution provide a semiconductor device formed on a semiconductor substrate and including an N-well formed over a P-type substrate and at least a contact portion of the N-well in electrical contact with the solution. When the semiconductor device is optically illuminated, a P/N junction is formed as a result of photovoltaic phenomena. Metal ions from the solution migrate to the contact area due to the voltage created at the P/N junction. The semiconductor device includes a conductive structure with conductive features separated by a gap and therefore in an initially electrically open state. When the ions migrate to the contact area, they precipitate, at least partially bridging the gap and creating conductance through the conductive structure. The conductance may be measured to determine the amount of metal ion contamination.


Patent
WaferTech | Date: 2015-12-14

A method and structure for floating gate transistors provides floating gate transistors with floating gates having sharp, well-controlled edge profiles. The sharp, well-controlled edge profiles enhance electrical functionality and endurance and are formed by a process including a planarization process that produces polysilicon segments disposed directly between adjacent STI structures, then forming a second polysilicon layer and patterning to form an upper polysilicon segment over the lower polysilicon segment to produce a combined polysilicon segment with a T-shape and having edges that overhang the adjacent edges of associated STI structures.


A method for forming a non-volatile memory cell is provided. The method comprises: forming a field region with a first impurity type in a semiconductor substrate, the field region having a first impurity concentration; forming a plurality of spaced apart higher concentration regions with the first impurity type within the field region, the higher concentration regions each having a higher concentration than the first impurity concentration; and forming a plurality of floating gate transistors in the field region between the higher concentration regions.


Patent
WaferTech | Date: 2015-03-23

Multiple intertwined inductor coils combine to form one or more transformer devices of a semiconductor device. The intertwined inductor coils are formed of only two metallization layers and vias coupling the layers. The inductor coils are vertically oriented and include a magnetic axis parallel to the substrate surface. A plurality of metal wires are provided on both a first device level and a second device level. Each of the metal wires on the first device level is coupled to two wires on the second device level and forms a first inductor coil. The two metal wires on the second device level that form part of the first inductor coil, are separated by a third wire that is coupled to two different first device level metal wires and forms part of a different second inductor coil intertwined with the first inductor coil.


Patent
WaferTech | Date: 2016-01-12

A split gate flash cell device with floating gate transistors is provided. Each floating gate transistor is formed by providing a floating gate transistor substructure including an oxide disposed over a polysilicon gate disposed over a gate oxide disposed on a portion of a common source. Nitride spacers are formed along sidewalls of the floating gate transistor substructure and cover portions of the gate oxide that terminate at the sidewalls. An isotropic oxide etch is performed with the nitride spacers intact. The isotropic etch laterally recedes opposed edges of the oxide inwardly such that a width of the oxide is less than a width of the polysilicon gate. An inter-gate dielectric is formed over the floating gate transistor substructure and control gates are formed over the inter-gate dielectric to form the floating gate transistors.


Provided is a test pattern structure for determining overlay accuracy in a semiconductor device. The test pattern structure includes one or more resistor structures formed by patterning a lower silicon layer. Each includes a zigzag portion with leads at different spatial locations. An upper pattern is formed and includes at least one pattern feature formed over the resistor or resistors. The portions of the resistor or resistors not covered by the upper pattern feature will become silicided during a subsequent silicidation process. Resistance is measured to determine overlay accuracy as the resistor structures are configured such that the resistance of the resistor structure is determined by the degree of silicidation of the resistor structure which is determined by the overlay accuracy between the upper and lower patterns.

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