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Vallabh Vidyanagar, India

Jivani A.R.,VP and RPTP Science College | Jani A.R.,Sardar Patel University
Advanced Materials Research | Year: 2013

In the present investigation, we report theoretical study of total energy, energy band gap in X-direction, bulk modulus, elastic constants and pressure derivative of elastic constants of Si1-xSnxsolid solution using higher-order perturbation theory along with application of our proposed potential, where x is concentration of Sn. The parameter of our potential is determined using zero-pressure equilibrium condition. In the present calculations, The local-field correction function can be employed to consider exchange and correlation effects. The present study showed that the physical quantities under investigation varied with the concentration of the constituent element. © (2013) Trans Tech Publications, Switzerland. Source


SnS (tin sulphide) is of interest for use as an absorber layer and the wider energy band gap phases e.g. SnS2, Sn2S3 and Sn/S/O alloys of interest as Cd-free buffer layers for use in thin film solar cells. Thin films of tin sulphide have been deposited using CBD at three different bath temperatures (27, 35 and 45 0C) onto microscope glass substrates. The X ray diffraction (XRD) analysis of the deposited films reveled that all films has orthorhombic SnS phase as dominant one with preferred orientations along (111) direction. The temperature influence on the crystalline nature and the presence of other phases of SnS has been observed. The average grain size in the films determined from Scherer's formula as well as from Williamson-Hall-plot method agrees well with each other. Energy dispersive X-ray (EDAX) analysis used to determine the film composition suggested that films are almost stoichiometric. The scanning electron microscopy (SEM) reveals that deposited films are pinhole free and consists of uniformly distributed spherical grains. The optical analysis in the 200-1200 nm range suggests that direct allowed transitions are dominant in the absorption process in the films with variation in the band gap (~1.79 to ~2.05 eV) due to variation in deposition temperature. © (2013) Trans Tech Publications, Switzerland. Source


Jivani A.R.,VP and RPTP Science College | Jani A.R.,Sardar Patel University
International Journal of Modern Physics B | Year: 2011

The higher-order perturbation theory based on pseudopotential approach is used to investigate few elastic and vibrational properties of Group IV semiconductors. The homogeneous deformation method is used to calculate elastic constants. To consider electron-ion interactions, our own proposed potential is employed to investigate such properties of Si, Ge and α-Sn. The potential contains only single parameter and its value is determined by fitting experimental value of bulk modulus. The calculated physical properties like elastic constants, pressure derivatives of the bulk modulus, pressure derivatives of elastic constants, Young's modulus and Poisson's ratio etc., of Si, Ge and α-Sn are in good agreement with available experimental and other available theoretical results. The deviation of the present calculations using our potential with respect to experimental data is found to be less than 10% in most of the calculated physical properties. To consider the exchange and correlation effect, five different local-field correction functions are incorporated in the present investigations. From the present study, it can be observed that incorporation of local-field correction and the covalent-correction term are important in such type of investigations. © 2011 World Scientific Publishing Company. Source


Jivani A.R.,VP and RPTP Science College | Jani A.R.,Sardar Patel University
International Journal of Modern Physics B | Year: 2015

Physical properties like elastic constants, pressure derivative of bulk modulus, pressure derivative of elastic constants and acoustic wave velocities in different directions for MgxZn1-xS, MgxZn1-xSe and ZnSySe1-y semiconductor ternary alloys and MgxZn1-xSySe1-y quaternary alloys with different concentrations of x and y are studied using our previously proposed potential based on the pseudopotential formalism. It is noticed from the present study that the physical properties under investigations depend on concentrations x and y of constitute compounds. The present results of various physical quantities of compounds presented here are compared with the available experimental data and other theoretical estimations and showed roughly reasonable agreement. The numerical values of same quantities for ternary alloys and MgZnSSe quaternary alloys were reported first time and hence such results may be useful for comparison purpose in future with either the experimental or the theoretical work. © 2015 World Scientific Publishing Company. Source


Jivani A.R.,VP and RPTP Science College | Jani A.R.,Sardar Patel University
Turkish Journal of Physics | Year: 2012

The static elastic constants (C 11, C 12 and C 44) , pressure derivative of elastic constants, pressure derivative of bulk modulus, propagation velocities of longitudinal and transverse waves in [100], [110] and [111] directions and Young modulus are investigated through computations using the higher-order perturbation theory based on pseudopotential formalism, in which we have applied our own proposed model potential for GaP, GaAs and GaSb semiconductor compounds. In the present calculations, two local-field correction functions are employed to consider exchange and correlation effects. The numerical values of the aforesaid properties are found to be sensitive to the selection of the local-field correction function and showing a significant variation with the change in the function. The presently investigated numerical data is found to have, in general, good agreement with the available experiment data and other such theoretical values. © TÜBITAK. Source

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