Luts’k, Ukraine
Luts’k, Ukraine

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Douayar A.,Mohammed V University | Abd-Lefdil M.,Mohammed V University | Nouneh K.,Mohammed V University | Prieto P.,Autonomous University of Madrid | And 3 more authors.
Applied Physics B: Lasers and Optics | Year: 2013

Photoinduced linear electrooptical (EO) effect was studied for Zinc oxide nanofilms doped by Nd. We have chosen Nd rare earth impurity with different contents to explore its influence on photoinduced EO. The kinetics of the photoinduced EO changes was studied. We have chosen the bicolor coherent 10 ns Nd:YAG laser pulses with power densities varying up to about 1 GW/cm2 as the photoinducing beam. The enhancement of the photoinduced liner EO and its relaxation was explored. Additionally, the study of the photoinduced trapping levels within the energy gap was performed and the explanation of the obtained results is given. © 2013 Springer-Verlag Berlin Heidelberg.


Reshak A.H.,University of South Bohemia | Reshak A.H.,University Malaysia Perlis | Reshak A.H.,Czestochowa University of Technology | Kityk I.V.,Czestochowa University of Technology | And 6 more authors.
Journal of Alloys and Compounds | Year: 2013

The influence of crystallochemical affinity for crystals ZrGa2 and ZrGa3 on the optical properties was studied. We have calculated dispersion of optical constants ε2average(ω). We have established that application of different exchange correlation potentials XC has no significant effect on the optical constant dispersion. Moreover, use of LDA, GGA and EVGGA has an insignificant effect on the corresponding optical features. The crystallochemical transformation between the two titled compounds leads to a spectral shift of the whole ε2average(ω) structure: for ZrGa 3 it leads to higher energy shift with respect to ZrGa2. Moreover, one can see that the first spectral peak of ε2average(ω) for ZrGa2 which situated at around 0.5 eV becomes very small for ZrGa3 but still situated in the same location. The first right hand side hump in ε2average(ω) - ZrGa2 which is located at around 1.5 eV becomes pronounced and situated at around 2.2 eV in ε2average(ω) - ZrGa3. For more complete information we have calculated dispersions of the electronic loss function, reflectivity and the optical conductivity. © 2012 Elsevier B.V. All rights reserved.


Reshak A.H.,University of South Bohemia | Reshak A.H.,University Malaysia Perlis | Kityk I.V.,Czestochowa University of Technology | Kityk I.V.,King Saud University | And 7 more authors.
Journal of Materials Science | Year: 2013

We report measurements of the X-ray diffraction and X-ray photoelectron spectrum on single crystals of Ag2In2GeS6. We also present first principles calculations of the band structure and density of states using the state-of-the-art full potential augmented plane wave method with different possible approximation for the exchange correlation potential. In this paper, we make a detailed comparison of the density of states deduced from the X-ray photoelectron spectra with our calculations. The theoretical results of the density of states are in reasonable agreement with the X-ray photoelectron spectroscopy (VB-XPS) measurements with respect to peak positions. The calculated density of states shows there is a strong hybridization between the states in the valence and conduction bands states. We have calculated the electron charge density distribution in the (100) and (110) planes. In the plane (100), there exists Ag, In, and S atoms, while the plane (110) Ag, S, and Ge atoms are present. The bonding properties are obtained from the charge density distributions. The calculation show that there is partial ionic and strong covalent bonding between Ag-S, In-S, and Ge-S atoms depending on Pauling electro-negativity difference of S (2.58), Ge (2.01), Ag (1.93), and In (31.78) atoms. © 2012 Springer Science+Business Media, LLC.


Kogut Y.,Volyn State University | Fedorchuk A.,Lviv National University of Veterinary Medicine and Biotechnologies | Zhbankov O.,Volyn State University | Romanyuk Y.,Empa - Swiss Federal Laboratories for Materials Science and Technology | And 3 more authors.
Journal of Alloys and Compounds | Year: 2011

The isothermal section of the Ag2S-PbS-GeS2 system at room temperature was investigated by XRD. The existence of two quaternary compounds, Ag2PbGeS4 and Ag0.5Pb 1.75GeS4, was confirmed, and the phase equilibria between the binary system components and the ternary and the quaternary compounds were determined. The crystal structure of Ag2PbGeS4 was studied using the single crystal X-ray diffraction. It was established that Ag 2PbGeS4 crystallizes in an own structural type in non-centrosymmetric space group Ama2 with the lattice parameters a = 1.02390(4) nm, b = 1.02587(5) nm, c = 0.67701(3) nm. © 2010 Elsevier B.V.


Atuchin V.V.,RAS Semiconductor Physics Institute | Piskach L.V.,Volyn State University | Parasyuk O.V.,Volyn State University
2010 IEEE 2nd Russia School and Seminar on Fundamental Problems of Micro/Nanosystems Technologies, MNST'2010 | Year: 2010

Available information on polymorph modifications observed for AgLnX 2 (Ln = Dy, Ho, Er; X = S, Se, Te) compounds has been analyzed comparatively. Cubic polymorph with mixed (0.5Ag + 0.5Ln) cation positions is generally formed at high temperatures. Formation of monoclinic, orthorhombic and tetragonal acentric crystals is found at low temperature depending on the anion type. © 2010 IEEE.


Melnyk G.,Johannes Gutenberg University Mainz | Gulay L.D.,Volyn State University | Tremel W.,Johannes Gutenberg University Mainz
Journal of Alloys and Compounds | Year: 2012

The crystal structures of the compounds RE 2Pt 2Pb (RE = Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; Mo 2FeB 2 structure type, space group P4/mbm, Pearson code tP10), REPtPb (RE = La, Ce, Pr, Nd, Sm; ZrNiAl structure type, space group P6̄2m, Pearson code hP9), RE 2Au 2Pb (RE = Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; Er 2Au 2Sn structure type, space group P4 2/mnm, Pearson code tP20) and REAuPb (RE = Tm, Yb and Lu) were determined using X-ray powder diffraction. © 2012 Elsevier B.V. All rights reserved.

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