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Browne B.,Trimble | Lacey J.,JDSU | Tibbits T.,Fraunhofer Institute for Solar Energy Systems | Bacchin G.,JDSU | And 3 more authors.
AIP Conference Proceedings | Year: 2013

III-V InGaP/InGaAs/Ge triple junction solar cells have been developed which incorporate quantum wells into the InGaAs and InGaP junctions. Characterization of such devices shows an absolute efficiency gain of up to 2% with Voc exceeding that of non-QW devices. Cells grown on 6′ wafers with quantum wells in the InGaAs junction are now commercially available with median efficiencies above 41%. © 2013 AIP Publishing.


— Global Gallium Arsenide Industry Report offers market overview, segmentation by types, application, countries, key manufactures, cost analysis, industrial chain, sourcing strategy, downstream buyers, marketing strategy analysis, distributors/traders, factors affecting market, forecast and other important information for key insight. Companies profiled in this report are Freiberger Compound Materials, Axt, Sumitomo Electric, China Crystal Technologies, Visual Photonics Epitaxy, Shenzhou Crystal Technology, Tianjin Jingming Electronic Materials, Yunnan Germanium, Dowa Electronics Materials, Ii-Vi Incorporated, Iqe Taiwan Corporation in terms of Basic Information, Manufacturing Base, Sales Area and Its Competitors, Sales, Revenue, Price and Gross Margin (2012-2017). Split by Product Types, with sales, revenue, price, market share of each type, can be divided into • LEC Grown GaAs • VGF Grown GaAs • Others Split by applications, this report focuses on sales, market share and growth rate of Gallium Arsenide in each application, can be divided into • Optoelectronic Devices Purchase a copy of this report at: https://www.themarketreports.com/report/buy-now/499864 Table of Content: 1 Gallium Arsenide Market Overview 2 Global Gallium Arsenide Sales, Revenue (Value) and Market Share by Manufacturers 3 Global Gallium Arsenide Sales, Revenue (Value) by Countries, Type and Application (2012-2017) 4 Global Gallium Arsenide Manufacturers Profiles/Analysis 5 North America Gallium Arsenide Sales, Revenue (Value) by Countries, Type and Application (2012-2017) 6 Latin America Gallium Arsenide Sales, Revenue (Value) by Countries, Type and Application (2012-2017) 7 Europe Gallium Arsenide Sales, Revenue (Value) by Countries, Type and Application (2012-2017) 8 Asia-Pacific Gallium Arsenide Sales, Revenue (Value) by Countries, Type and Application (2012-2017) 9 Middle East and Africa Gallium Arsenide Sales, Revenue (Value) by Countries, Type and Application (2012-2017) 10 Gallium Arsenide Manufacturing Cost Analysis 11 Industrial Chain, Sourcing Strategy and Downstream Buyers 12 Marketing Strategy Analysis, Distributors/Traders 13 Market Effect Factors Analysis 14 Global Gallium Arsenide Market Forecast (2017-2022) 15 Research Findings and Conclusion 16 Appendix Inquire more for more details about this report at: https://www.themarketreports.com/report/ask-your-query/499864 For more information, please visit https://www.themarketreports.com/report/2017-2022-global-top-countries-gallium-arsenide-market-report


Wu H.-M.,National Taiwan University | Tsai S.-J.,Visual Photonics Epitaxy Co. | Chang Y.-C.,National Taiwan University | Chen Y.-R.,National Taiwan University | Lin H.-H.,National Taiwan University
Thin Solid Films | Year: 2014

We report on the structural properties of ordering InGaP directly deposited on (001) Ge substrate by organometallic vapor phase epitaxy. The Ge substrate is 6° miscut towards (110). Results from transmission electron diffraction indicate the existence of CuPt-B ordering phase in the sample. The ordering direction is assigned to be [11¯1], which is perpendicular to the miscut direction of the Ge substrate. Because only one ordering phase is observed, no anti-phase domain exists in the sample. The order parameter determined from photoluminescence at room temperature is 0.492. Raman scattering was also used to analyze the ordering effect. A mode at 354 cm- 1 relevant to the ordering phase confirms that the CuPt-B ordering is along [11¯1]. © 2014 Elsevier B.V.


Chin Y.-C.,National Taiwan University | Lin H.-H.,National Taiwan University | Huang C.-H.,Visual Photonics Epitaxy Company | Tseng M.-N.,Visual Photonics Epitaxy Company
IEEE Electron Device Letters | Year: 2010

We report on the band alignment of In0.46Ga0.54P 0.98Sb0.02/GaAs and the dc characteristics of In 0.46Ga0.54P0.98Sb0.02/GaAs heterojunction bipolar transistors (HBTs). By comparing the forward and reverse Gummel plot, we found a potential spike existing at the InGaPSb/GaAs interface. Through a flatband extrapolation from the currents of the forward and reverse Gummel plot and the energy gap determined from photoluminescence, we concluded that In0.46Ga0.54P0.98Sb0.02/GaAs is in a type-I band alignment. The conduction-band offset and valence-band offset are 0.12 and 0.35 eV, respectively. As a result of the type-I band alignment, the InGaPSb/GaAs HBTs showed a more significant thermal degradation of the current gain than the control InGaP/GaAs HBT. The thermal behavior is beneficial to ruggedness. © 2010 IEEE.


Wu H.-M.,National Taiwan University | Tsai S.-J.,Visual Photonics Epitaxy Co. | Ho H.-I.,National Taiwan University | Lin H.-H.,National Taiwan University
Journal of Applied Physics | Year: 2016

We report on the Ge auto-doping and out-diffusion in InGaP epilayer with Cu-Pt ordering grown on 4-in. Ge substrate. Ge profiles determined from secondary ion mass spectrometry indicate that the Ge out-diffusion depth is within 100 nm. However, the edge of the wafer suffers from stronger Ge gas-phase auto-doping than the center, leading to ordering deterioration in the InGaP epilayer. In the edge, we observed a residual Cu-Pt ordering layer left beneath the surface, suggesting that the ordering deterioration takes place after the deposition rather than during the deposition and In/Ga inter-diffusion enhanced by Ge vapor-phase auto-doping is responsible for the deterioration. We thus propose a di-vacancy diffusion model, in which the amphoteric Ge increases the di-vacancy density, resulting in a Ge density dependent diffusion. In the model, the In/Ga inter-diffusion and Ge out-diffusion are realized by the random hopping of In/Ga host atoms and Ge atoms to di-vacancies, respectively. Simulation based on this model well fits the Ge out-diffusion profiles, suggesting its validity. By comparing the Ge diffusion coefficient obtained from the fitting and the characteristic time constant of ordering deterioration estimated from the residual ordering layer, we found that the hopping rates of Ge and the host atoms are in the same order of magnitude, indicating that di-vacancies are bound in the vicinity of Ge atoms. © 2016 AIP Publishing LLC.


Chin Y.-C.,National Taiwan University | Lin H.-H.,National Taiwan University | Huang C.-H.,Visual Photonics Epitaxy Co.
IEEE Electron Device Letters | Year: 2012

We report on the dc characteristics of an InGaP GaAs 0.57P 0.28Sb 0.15GaAs double heterojunction bipolar transistor (DHBT). In comparison with control InGaP/GaAs single heterojunction bipolar transistors (SHBTs), the DHBT shows a lower turn-on voltage V BE on by ∼70 mV, a lower knee voltage up to J c∼40 kA 2, and less temperature-sensitive current gain. The validity of reciprocity in the Gummel plot suggests no potential spikes at the emitter/base and base/collector (BC) junctions of the DHBT. By considering the differences, in terms of the built-in voltage of the BC junction, the Fermi level in the base, and the renormalized energy gap of the base, between the GaAsPSb DHBT and the control InGaP/GaAs SHBT, we conclude that the heavily p-doped GaAs 0.57P 0.28Sb 0.15 base and the lightly n-doped GaAs collector are in weakly type-II band alignment with a conduction and valence band offset of 44 and 221 meV, respectively. These findings indicate that GaAsPSb is a promising base material for DHBTs operating at high temperature and low V BE, on conditions without suffering from the collector current blocking. © 2012 IEEE.


Patent
Visual Photonics Epitaxy Co. | Date: 2013-06-05

A high electron mobility bipolar transistor including a substrate, a pseudomorphic high electron mobility transistor (pHEMT) sub structure, a sub collector/separating layer and a heterojunction bipolar transistor (HBT) sub structure sequentially stacked from bottom to top is disclosed. The sub collector/separating layer and the pHEMT sub structure are combined to form a pHEMT, and the sub collector/separating layer and the HBT sub structure are combined to form an HBT. The carbon concentration in the sub collector/separating layer is within 510^(17 )cm^(3 )and 110^(20 )cm^(3), and/or the oxygen concentration within 510^(18 )cm^(3 )and 110^(20 )cm^(3). The lattice during the process of epitaxy growth is stabilized and it is possible to prevent the dopants, the elements, the vacancies or the defects from diffusing into the neighboring layers, thereby improving the problem of mobility degradation and resistance increase, and sustaining the stability of the manufacturing process.


Patent
Visual Photonics Epitaxy Co. | Date: 2014-07-09

A high electron mobility bipolar transistor including a substrate, a pseudomorphic high electron mobility transistor (pHEMT) sub structure, a sub collector/separating layer and a heterojunction bipolar transistor (HBT) sub structure sequentially stacked from bottom to top is disclosed. The sub collector/separating layer and the pHEMT sub structure are combined to form a pHEMT, and the sub collector/separating layer and the HBT sub structure are combined to form an HBT. The carbon concentration in the sub collector/separating layer is within 510^(17 )cm^(3 )and 110^(20 )cm^(3), and/or the oxygen concentration within 510^(18 )cm^(3 )and 110^(20 )cm^(3). The lattice during the process of epitaxy growth is stabilized and it is possible to prevent the dopants, the elements, the vacancies or the defects from diffusing into the neighboring layers, thereby improving the problem of mobility degradation and resistance increase, and sustaining the stability of the manufacturing process.


Patent
Visual Photonics Epitaxy Co. | Date: 2014-11-07

A directed epitaxial heterojunction bipolar transistor (HBT) structure is directly or indirectly formed on a GaAs substrate that is formed by a (100) face towards a (111)B face with an angle of inclination between 0.6 and 25, and includes a sub-collector layer, a collector, a base layer, an emitter layer, an emitter cap layer and an ohmic contact layer, which are sequentially formed on the substrate. A tunnel collector layer formed by InGaP or InGaAsP is provided between the collector layer and the base layer. Since an epitaxial process is performed on the substrate from a (100) face towards a (111)B face with an angle of inclination between 0.6 and 25, indium and gallium contained in InGaP or InGaAsP are affected by the ordering effect such that InGaP or InGaAsP used in the emitter layer and/or the tunnel collector layer has a higher electron affinity or a smaller bandgap.


Patent
Visual Photonics Epitaxy Co. | Date: 2015-05-15

Provided is a heterojunction bipolar transistor (HBT), including a GaAs substrate; a subcollector layer stacked on the GaAs substrate, wherein a part of or all of the subcollector layer is formed by N-type group III-V semiconductors doped by at least Te and/or Se; a blocking layer structure directly or indirectly stacked on the subcollector layer, and formed by N-type group III-V semiconductors doped by at least group IV elements, a collector layer stacked on the blocking layer structure, and formed by N-type group III-V semiconductors; a base layer stacked on the collector layer, and formed by P-type group III-V semiconductors; an emitter layer stacked on the base layer and formed by N-type group III-V semiconductors; an emitter cap layer stacked on the emitter layer and formed by N-type group III-V semiconductors; and an ohmic contact layer stacked on the emitter cap layer and formed by N-type group III-V semiconductors.

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