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Malvern, PA, United States

Vishay Intertechnology, Inc. is one of the world's largest manufacturers of discrete semiconductors and passive electronic components. Vishay has manufacturing plants in Israel, Asia, Europe, and the Americas where it produces rectifiers, diodes, MOSFETs, optoelectronics, selected integrated circuits, resistors, capacitors, and inductors. Vishay Intertechnology revenues for 2011 were $2.594 billion. As of December 31, 2011, Vishay Intertechnology had approximately 20,900 full-time employees. Wikipedia.


An LDMOS (laterally diffused metal oxide semiconductor) structure connects the source to a substrate and also the gate shield while utilizing a reduced area for such contacts. The structure includes an electrically conductive substrate layer, a source, and a drain contact; the drain contact is separated from the substrate layer by at least one intervening layer. An electrically conductive trench-like feed-through element passes through the intervening layer and contacts the substrate and the source to electrically connect the drain contact and the substrate layer.


Patent
Vishay | Date: 2015-03-10

An inductor includes an inductor body having a top surface and a first and second opposite end surfaces. There is a void through the inductor body between the first and second opposite end surfaces. A thermally stable resistive element positioned through the void and turned toward the top surface to forms surface mount terminals which can be used for Kelvin type sensing. Where the inductor body is formed of a ferrite, the inductor body includes a slot. The resistive element may be formed of a punched resistive strip and provide for a partial turn or multiple turns. The inductor may be formed of a distributed gap magnetic material formed around the resistive element. A method for manufacturing the inductor includes positioning an inductor body around a thermally stable resistive element such that terminals of the thermally stable resistive element extend from the inductor body.


Patent
Vishay | Date: 2015-03-16

A semiconductor devicee.g., a super junction power MOSFETincludes a number of columns of one type of dopant formed in a region of another type of dopant. Generally speaking, the columns are modulated in some manner. For example, the widths (e.g., diameters) of some columns are greater than the widths of other columns.


A semiconductor device such as a Zener diode includes a first semiconductor material of a first conductivity type and a second semiconductor material of a second conductivity type in contact with the first semiconductor material to form a junction therebetween. A first oxide layer is disposed over a portion of the second semiconductor material such that a remaining portion of the second semiconductor material is exposed. A polysilicon layer is disposed on the exposed portion of the second semiconductor material and a portion of the first oxide layer. A first conductive layer is disposed on the polysilicon layer. A second conductive layer is disposed on a surface of the first semiconductor material opposing a surface of the first semiconductor material in contact with the second semiconductor material.


A semiconductor device such as a Zener diode includes a first semiconductor material of a first conductivity type and a second semiconductor material of a second conductivity type in contact with the first semiconductor material to form a junction therebetween. A first oxide layer is disposed over a portion of the second semiconductor material such that a remaining portion of the second semiconductor material is exposed. A polysilicon layer is disposed on the exposed portion of the second semiconductor material and a portion of the first oxide layer. A first conductive layer is disposed on the polysilicon layer. A second conductive layer is disposed on a surface of the first semiconductor material opposing a surface of the first semiconductor material in contact with the second semiconductor material.

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