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Fifth Street, TX, United States

Stephan Thamban P.L.,University of Texas at Dallas | Padron-Wells G.,University of Texas at Dallas | Yun S.,University of Texas at Dallas | Hosch J.W.,Verity Instruments Inc. | Goeckner M.J.,University of Texas at Dallas
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

In process optical emission spectroscopy (OES) measurements, excitation mechanisms as dictated by the process plasma can be complex to analyze optical signals quantitatively. Applications of a new electron beam excitation method demonstrate distinct merits for plasma process diagnostics and process control. The electron energy control attribute of the method provides the means to optimize and monitor specific species optical emission in process chemistries to achieve process control such as endpoint. The authors present gas phase results from photoresist ash and SiO2 etch using O2 and CF 4/Ar discharges, respectively. The effluent density variations as measured with the e-beam method during process stages demonstrate process endpoint detection. Simultaneous measurements with FTIR spectroscopy and direct plasma OES is also presented for comparison. © 2012 American Vacuum Society. Source

Verity Instruments Inc. and F.E.P. Inc. | Date: 1982-10-05

Apparatus for Detecting Contaminants in Plasma Chemistry and Vacuum Environments, Said Plasma Processing Used in Etching and Deposition in the Manufacture of Semiconductor Devices.

Abuta E.,Verity Instruments Inc. | Tian J.,Southern Methodist University | Tian J.,Northwestern Polytechnical University
Proceedings - 1st International Workshop on Complex Faults and Failures in Large Software Systems, COUFLESS 2015

Demonstrating software reliability across multiple software revisions has become essential to end users of an end point detection system used in the semiconductor industry. This would enable them to make informed decisions of upgrading software versions without making significant impact to their current established processes. We show how one can use standard defect data normally collected in any software development organization to demonstrate reliability trends. We provide evidence of reliability maintained across the different versions and that continuous defect fixes increased software reliability over time. © 2015 IEEE. Source

Stephan Thamban P.L.,University of Texas at Dallas | Stephan Thamban P.L.,Verity Instruments Inc. | Yun S.,University of Texas at Dallas | Yun S.,Verity Instruments Inc. | And 5 more authors.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Traditionally process plasmas are often studied and monitored by optical emission spectroscopy. Here, the authors compare experimental measurements from a secondary electron beam excitation and direct process plasma excitation to discuss and illustrate its distinctiveness in the study of process plasmas. They present results that show excitations of etch process effluents in a SF 6 discharge and endpoint detection capabilities in dark plasma process conditions. In SF6 discharges, a band around 300 nm, not visible in process emission, is observed and it can serve as a good indicator of etch product emission during polysilicon etches. Based on prior work reported in literature the authors believe this band is due to SiF4 gas phase species. © 2012 American Vacuum Society. Source

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