Veeco MOCVD Operations

Elizabeth, NJ, United States

Veeco MOCVD Operations

Elizabeth, NJ, United States

Time filter

Source Type

Lin G.-B.,Rensselaer Polytechnic Institute | Zhang X.,Veeco MOCVD Operations | Lee S.M.,Veeco MOCVD Operations | Papasouliotis G.,Veeco MOCVD Operations | And 3 more authors.
Current Applied Physics | Year: 2015

Light-emitting diodes (LEDs) with a Mg-doped p-type Ga1-xInxN (0x 0.07) spacer layer located between an undoped GaN spacer layer and the electron blocking layer are investigated. The LEDs are found to have comparable peak efficiency but less efficiency droop when the crystal quality of the p-type Ga1-xInxN spacer layer is well-controlled by lowering the growth temperature and by using a suitable In composition and Mg doping concentration. All LED samples with the p-type spacer layer show a smaller efficiency droop compared to a reference LED having an undoped GaN spacer. Among the sample sets investigated, an optical power enhancement of 12% at 111 A/cm2 is obtained when inserting a 5 nm-thick p-type Ga0.97In0.03N spacer layer. The results support that carrier transport is the key factor in the efficiency droop observed in GaN-based LEDs. © 2015 Elsevier B.V.All rights reserved.


Su J.,Veeco MOCVD Operations | Posthuma N.,Kapeldreef 75 | Wellekens D.,Kapeldreef 75 | Saripalli Y.N.,Kapeldreef 75 | And 3 more authors.
Journal of Electronic Materials | Year: 2016

We are reporting the growth of AlGaN based enhancement-mode high electron mobility transistors (HEMTs) on 200 mm silicon (111) substrates using a single wafer metalorganic chemical vapor deposition reactor. It is found that TMAl pre-dosing conditions are critical in controlling the structural quality, surface morphology, and wafer bow of the HEMT stack. Optimal structural quality and pit-free surface are demonstrated for AlGaN HEMTs with pre-dosing temperature at 750°C. Intrinsically, carbon-doped AlGaN, is used as the current blocking layer in the HEMT structures. The lateral buffer breakdown and device breakdown characteristics, reach 400 V at a leakage current of 1 μA/mm measured at 150°C. The fabricated HEMT devices, with a Mg doped p-GaN gate layer, are operating in enhancement mode reaching a positive threshold voltage of 2–2.5 V, a low on-resistance of 10.5 Ω mm with a high drain saturation current of ~0.35 A/mm, and a low forward bias gate leakage current of 0.5 × 10−6 A/mm (Vgs = 7 V). Tight distribution of device parameters across the 200 mm wafers and over repeat process runs is observed. © 2016 The Minerals, Metals & Materials Society


Papasouliotis G.D.,Veeco MOCVD Operations | Su J.,Veeco MOCVD Operations | Krishnan B.,Veeco MOCVD Operations | Arif R.,Veeco MOCVD Operations
ECS Transactions | Year: 2015

We are reporting on the epitaxial growth of Al/Ga/N films on 200 mm Si substrates carried out in Veeco's Propel" rotating disk, single wafer, vertical MOCVD reactor. The Turbodisc® reactor is designed for uniform alkyl and hydride flow distribution, and temperature profile, resulting in uniform and concentrically symmetric epilayer thickness and chemical composition. Results are presented on film stress and wafer curvature control facilitated by adjusting the thickness and growth conditions of individual layers in AlN/GaN superlattices. The growth of highly resistive, intrinsically carbon-doped GaN layers is studied, and the influence of growth conditions, growth temperature, pressure, and V/III ratio, on carbon incorporation rate, crystal quality, and surface morphology will be discussed in this paper. Carbon incorporation is enhanced at lower growth temperature, lower pressure, and lower V/III ratios; we have obtained concentrations as high as 3E19/cm at a growth pressure of 35 Torr and growth temperature of 960°C. © The Electrochemical Society.


Lee D.S.,Veeco MOCVD Operations | Su J.,Veeco MOCVD Operations | Krishnan B.,Veeco MOCVD Operations | Papasouliotis G.D.,Veeco MOCVD Operations | Paranjpe A.,Veeco MOCVD Operations
ECS Transactions | Year: 2013

Growth of crack-free AlGaN/GaN heterostructures on 6 and 8 inch Si(111) by 5×6″ and 3×8″ multi-wafer K465i production MOCVD system is presented. The two-dimensional-electron-gas is formed at the AlGaN/GaN interface with average Hall mobility values more than 1800 cm2/v.s and sheet resistance less than 400 Ohm/sq. Run to run repeatability of AlGaN/GaN structural qualities, wafer bow, and 2DEG properties show the potential manufacturing possibility with the epitaxial process stability and longevity. © The Electrochemical Society.


Krishnan B.,Veeco MOCVD Operations | Lee S.,Veeco MOCVD Operations | Li H.,Veeco MOCVD Operations | Su J.,Veeco MOCVD Operations | And 2 more authors.
Sensors and Materials | Year: 2013

Device-oriented GaN layers have been grown with AlxGa 1-xN buffer structures as a bottom layer on 8 in. Si substrates using a commercial high-throughput metal organic chemical vapor deposition (MOCVD) system. The effect of the V/III ratio on the growth of AlN nucleation layers formed directly on Si(111) substrates has been analyzed. The effects of parasitic reactions between the group III precursor and ammonia have been observed to be a major stumbling block in achieving a high growth rate with better crystalline quality of AlN layers on Si(111) substrates. In addition, the effect of the growth rate of strain-relieving AlxGa1-xN buffer structures on the wafer curvature of GaN structures during growth has been studied. It was found that the rapid growth of AlxGa 1-xN buffer structures helps reduce wafer bowing in GaN grown on top of the buffer structures.


Su J.,Veeco MOCVD Operations | Li H.,Veeco MOCVD Operations | Lee S.,Veeco MOCVD Operations | Krishnan B.,Veeco MOCVD Operations | And 3 more authors.
2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013 | Year: 2013

Growth of crack-free AlGaN/GaN heterostructures on 150mm Si by metal-organic chemical vapor deposition is presented. The two-dimensional- electron-gas is formed at the AlGaN/GaN interface. Average Hall mobility values are more than 2000 cm2/V.s and sheet resistance less than 400 Ohm/sq with a 1nm AlN spacer. Run-to-run repeatability of AlGaN/GaN structural qualities, wafer bow, and 2DEG properties shows the potential manufacturing possibility.


Su J.,Veeco MOCVD Operations | Krishnan B.,Veeco MOCVD Operations | Paranjpe A.,Veeco MOCVD Operations | Papasouliotis G.D.,Veeco MOCVD Operations
CS MANTECH 2014 - 2014 International Conference on Compound Semiconductor Manufacturing Technology | Year: 2014

The influence of MOCVD growth conditions (carrier gas, growth temperature, and V/III ratio) on the AlGaN barrier and the corresponding 2DEG for AlGaN/GaN heterostructures grown on 150 mm silicon is investigated. Hall mobility 2200 cm2/V.s, with sheet carrier concentration 8.7e1012 cm-2 and sheet resistance 326 Ohm/sq, is obtained for AlGaN grown in N2 ambient and with high V/III ratios.


Su J.,Veeco MOCVD Operations | Armour E.A.,Veeco MOCVD Operations | Krishnan B.,Veeco MOCVD Operations | Lee S.M.,Veeco MOCVD Operations | Papasouliotis G.D.,Veeco MOCVD Operations
Materials Research Society Symposium Proceedings | Year: 2015

Stress control using AIN/GaN superlattices (SLs) for epitaxy of GaN on 200 mm Si (111) substrates is reported. Crack-free 2 μm GaN layers were grown over structures containing 50 to 100 pairs of 3-5 nm A1N/10-30 nm GaN SLs. Compressive and tensile stress can be precisely adjusted by changing the thickness of the A1N and GaN layers in the SLs. For a constant period thickness, the effects of growth conditions, such as growth rate of GaN, V/III ratio during A1N growth, and growth temperature, on wafer stress were investigated. © 2015 Materials Research Society.


Su J.,Veeco MOCVD Operations | Armour E.A.,Veeco MOCVD Operations | Krishnan B.,Veeco MOCVD Operations | Lee S.M.,Veeco MOCVD Operations | Papasouliotis G.D.,Veeco MOCVD Operations
Journal of Materials Research | Year: 2015

We are reporting on stress engineering utilizing AlN/GaN superlattices (SLs) for epitaxy of GaN layers on 200 mm silicon substrates carried out in Veeco's Propel™ rotating disk, single wafer metal organic chemical vapor deposition (MOCVD) reactor. The Turbodisc® reactor is designed to have homogeneous alkyl/hydride flow distribution and uniform temperature profile, which translate into excellent uniformity and concentric symmetry in epilayer thickness and alloy composition. This feature results in uniform and controllable stress in epilayers across large-size substrates. Crack-free 2 μm GaN layers were grown on 200 mm Si using uniformly strained AlN/GaN SLs with periods of 3–5 and 10–30 nm, respectively. Compressive and tensile stress can be precisely adjusted by changing the thickness of the AlN and GaN layers in the SLs, resulting in controllable wafer curvature/bow after cool down. For a fixed period thickness structure, the effects of growth conditions, such as growth rate of GaN, AlN V/III ratio, and growth temperature, on wafer stress were investigated. Copyright © Materials Research Society 2015

Loading Veeco MOCVD Operations collaborators
Loading Veeco MOCVD Operations collaborators