Veeco Instruments | Date: 2016-08-24
A chemical vapor deposition system is disclosed herein. The chemical vapor deposition system has a plurality of reaction chambers to operate independently in the growth of epitaxial layers on wafers within each of the reaction chambers for the purpose of reducing processing time while maintaining the quality necessary for the fabrication of high-performance semiconductor devices.
Veeco Instruments | Date: 2016-08-16
Improvements to the heating uniformity of a wafer carrier for a chemical vapor deposition (CVD) system can be made based on a computational thermal model built according physical and operational characteristics of the CVD system. Operation of the thermal model is simulated, where a process recipe to be carried out on the CVD system is modeled, including heat transfers taking place in the virtual CVD system, to produce a set of thermal-spatial non-uniformities in at least one region of interest of a virtual wafer carrier. Structural corrections to be made to the pocket floor of each of the at least one wafer retention pocket are determined based on the set of thermal-spatial non-uniformities and on a predefined thermal-pocket floor relation that defines at least one design rule for correcting the pocket floor to achieve an increase in thermal uniformity throughout the at least one region of interest.
Veeco Instruments | Date: 2016-09-15
A wafer carrier for a plurality of wafers, the wafer carrier having a platen with a plurality of openings and a plurality of wafer retention platforms, the platen configured to rotate about a first axis, the plurality of wafer retention platforms configured to rotate about respective second axes, each of the wafer retention platforms rotatably coupled to one of the plurality of openings by friction reducing bearings, the platen and the plurality of wafer retention platforms and the friction reducing bearings all being constructed of the same material.
Plansee Group and Veeco Instruments | Date: 2017-02-15
The invention is related to a heating element (10) comprising a heating body (20) which is directly covered at least partly with a porous sintered coating (30), wherein the heating body (20) the porous sintered coating (30) each comprises at least 90 % by weight of tungsten.
Veeco Instruments | Date: 2016-01-20
A gas flow flange for a rotating disk reactor for chemical vapor deposition, the gas flow flange comprising: a) a first section comprising a plurality of first gas input channels positioned inside and parallel to a top surface of the first section, and a plurality of second gas input channels positioned perpendicular to the top surface of the first section and extending from the top surface to a bottom surface of the first section; and b) a second section comprising: 1) a plurality of first gas input channels positioned perpendicular to a top surface of the second section and extending through the top surface to a bottom surface of the second section, each of the plurality of first gas input channels of the second section being aligned with an output of a corresponding one of the plurality of first gas input channels in the first section; 2) a plurality of second gas input channels positioned perpendicular to and extending from the top surface to the bottom surface of the second section, each of the plurality of second gas input channels being aligned with a corresponding one of the plurality of second gas input channels in the first section; and 3) fluid cooling conduits that are formed in the second section and extending parallel to the top surface of the second section.
Veeco Instruments | Date: 2016-01-04
Wafer carriers and methods for moving wafers in a reactor. The wafer carrier may include a platen with a plurality of compartments and a plurality of wafer platforms. The platen is configured to rotate about a first axis. Each of the wafer platforms is associated with one of the compartments and is configured to rotate about a respective second axis relative to the respective compartment. The platen and the wafer platforms rotate with different angular velocities to create planetary motion therebetween. The method may include rotating a platen about a first axis of rotation. The method further includes rotating each of a plurality of wafer platforms carried on the platen and carrying the wafers about a respective second axis of rotation and with a different angular velocity than the platen to create planetary motion therebetween.
Veeco Instruments | Date: 2016-10-10
A PVD chamber for growing a magnetic film of NiFe alloy at a growth rate of greater than 200 nm/minute produces a film exhibiting magnetic skew of less than plus or minus 2 degrees, magnetic dispersion of less than plus or minus 2 degrees, DR/R of greater than 2 percent and film stress of less than 50 MPa. NiFe alloy is sputtered at a distance of 2 to 4 inches, DC power of 50 Watts to 9 kiloWats and pressure of 3 to 8 milliTorr. The chamber uses a unique field shaping magnetron having magnets arranged in outer and inner rings extending about a periphery of the magnetron except in two radially opposed regions in which the inner and outer rings diverge substantially toward a central axis of the magnetron.
Veeco Instruments | Date: 2016-01-10
A method of modifying a substrate carrier to improve process performance includes depositing material or fabricating devices on a substrate supported by a substrate carrier. A parameter of layers deposited on the substrate is then measured as a function of their corresponding positions on the substrate carrier. The measured parameter of at least some devices fabricated on the substrate or a property of the deposited layers is related to a physical characteristic of substrate carrier to obtain a plurality of physical characteristics of the substrate carrier corresponding to a plurality of positions on the substrate carrier. The physical characteristic of the substrate carrier is then modified at one or more of the plurality of corresponding positions on the substrate carrier to obtain desired parameters of the deposited layers or fabricated devices as a function of position on the substrate carrier.
Veeco Instruments | Date: 2016-06-10
A self-centering wafer carrier system for a chemical vapor deposition (CVD) reactor includes a wafer carrier comprising an edge. The wafer carrier at least partially supports a wafer for CVD processing. A rotating tube comprises an edge that supports the wafer carrier during processing. An edge geometry of the wafer carrier and an edge geometry of the rotating tube being chosen to provide a coincident alignment of a central axis of the wafer carrier and a rotation axis of the rotating tube during process at a desired process temperature.
Veeco Instruments | Date: 2016-05-11
Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers.