Palo Alto, CA, United States
Palo Alto, CA, United States

Varian, Inc. was one of the largest manufacturers of scientific instruments for the scientific industry. They had offerings over a broad range of chemical analysis equipment, with a particular focus on Information Rich DetectionTemplate:Huh? and Vacuum technology. Varian was spun off from Varian Associates in 1999 and was purchased by Agilent Technologies in May 2010 for $1.5 billion, or $52 per share.Varian Inc. had its corporate headquarters in Palo Alto, California, and offices in Australia, the Benelux countries, Brazil, Canada, China, Germany, France, Italy, Japan, Korea, Russia, Sweden, Taiwan, the United Kingdom, and the United States. Wikipedia.

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Provided herein are approaches for patterning a semiconductor device. Exemplary approaches include providing a set of photoresist patterning features atop a substrate, the set of patterning features having a surface roughness characterized by a set of protrusions and a set of indentations. The approaches further include implanting first ions into a sidewall surface of the set of photoresist patterning features to form a film layer having a non-uniform thickness along the sidewall surface, wherein a thickness of the film layer formed over the indentations is greater than a thickness of the film layer formed over the protrusions. The approaches further include sputtering the sidewall surface of the photoresist patterning features following the formation of the film layer to modify a portion of the film layer and/or the set of protrusions, wherein the sputtering includes directing second ions to photoresist patterning features at an angle with the sidewall surface.


Patent
Varian, Inc | Date: 2017-02-01

An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.


A planar end effector and method of making a planar end effector. The method may include the steps of applying adhesive to a first side of a first sheet, the first sheet having a second side opposite the first side, and disposing a first side of a second sheet on the adhesive, the second sheet having a second side opposite the first side, wherein the first sides of the first and second sheets confront each other and define an at least partially adhesive-filled bond-gap therebetween and wherein the second sides of the first and second sheets are parallel with one another. The method may further include the steps of curing the adhesive to produce a planar composite workpiece including the first sheet, the second sheet, and an intermediate adhesive layer, and cutting the end effector from the composite workpiece.


Patent
Varian, Inc | Date: 2017-03-22

An apparatus for processing a melt may include a crucible configured to contain the melt, where the melt has an exposed surface that is separated from a floor of the crucible by a first distance. The apparatus may further include a submerged heater comprising a heating element and a shell disposed between the heating element and the melt, wherein the heating element does not contact the melt. The heating element may be disposed at a second distance with respect to the exposed surface of the melt that is less than the first distance.


A crystallizer for growing a crystalline sheet from a melt may include a cold block having a cold block surface that faces an exposed surface of the melt, the cold block configured to generate a cold block temperature at the cold block surface that is lower than a melt temperature of the melt at the exposed surface. The system may also include a nozzle disposed within the cold block and configured to deliver a gas jet to the exposed surface, wherein the gas jet and the cold block are interoperative to generate a process zone that removes heat from the exposed surface at a first heat removal rate that is greater than a second heat removal rate from the exposed surface in outer regions outside of the process zone.


Patent
Varian, Inc | Date: 2017-01-23

A method of doping a substrate. The method may include implanting a dose of a helium species into the substrate through a surface of the substrate at an implant temperature of 300 C. or greater. The method may further include depositing a doping layer containing a dopant on the surface of the substrate, and annealing the substrate at an anneal temperature, the anneal temperature being greater than the implant temperature.


A method may include providing a patterned feature extending from a substrate plane of a substrate, the patterned feature including a semiconductor portion and a coating in an unhardened state extending along a top region and along sidewall regions of the semiconductor portion; implanting first ions into the coating, the first ions having a first trajectory along a perpendicular to the substrate plane, wherein the first ions form a etch-hardened portion comprising a hardened state disposed along the top region; and directing a reactive etch using second ions at the coating, the second ions having a second trajectory forming a non-zero angle with respect to the perpendicular, wherein the reactive etch removes the etch-hardened portion at a first etch rate, wherein the first etch rate is less than a second etch rate when the second ions are directed in the reactive etch to the top portion in the unhardened state.


Patent
Varian, Inc | Date: 2017-01-25

A method of forming a superconductor includes exposing a layer disposed on a substrate to an oxygen ambient, and selectively annealing a portion of the layer to form a superconducting region within the layer.


A system and method for removing metal from a substrate in a controlled manner is disclosed. The system includes a chamber, with one or more gas inlets to allow the flow of gasses into the chamber, at least one exhaust pump, to exhaust gasses from the chamber, and a heater, capable of modifying the temperature of the chamber. In some embodiments, one or more gasses are introduced into the chamber at a first temperature. The atoms in these gasses chemically react with the metal on the surface of the substrate to form a removable compound. The gasses are then exhausted from the chamber, leaving the removable compound on the surface of the substrate. The temperature of the chamber is then elevated to a second temperature, greater than the sublimation temperature of the removable compound. This increased temperature allows the removable compound to become gaseous and be exhausted from the chamber.


Patent
Varian, Inc | Date: 2017-09-13

A solid-state fault current limiter including a current splitting reactor, comprising a system current input, a passive current output and a control current output. A voltage control reactor includes a first end and a second end, the first end coupled to the control current output and the second end coupled to the passive current output. A fault current trigger circuit coupled in parallel with the voltage control reactor and configured to open when a fault current, received by the system current input, exceeds a predefined trigger current. A transient voltage control circuit coupled in parallel with the voltage control reactor to receive the fault current.

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