Palo Alto, CA, United States
Palo Alto, CA, United States

Varian, Inc. was one of the largest manufacturers of scientific instruments for the scientific industry. They had offerings over a broad range of chemical analysis equipment, with a particular focus on Information Rich DetectionTemplate:Huh? and Vacuum technology. Varian was spun off from Varian Associates in 1999 and was purchased by Agilent Technologies in May 2010 for $1.5 billion, or $52 per share.Varian Inc. had its corporate headquarters in Palo Alto, California, and offices in Australia, the Benelux countries, Brazil, Canada, China, Germany, France, Italy, Japan, Korea, Russia, Sweden, Taiwan, the United Kingdom, and the United States. Wikipedia.


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Patent
Varian, Inc | Date: 2015-11-06

A system and method for monitoring the temperature of a platen and a workpiece disposed on that platen is disclosed. Since the platen is a dielectric material, its properties, such as resistivity and conductivity, may change as a function of temperature. By understanding the relationship between these parameters and temperature, it may be possible to indirectly determine the temperature of the platen. For example, the platen may be in electrical communication with a power supply, which provides a clamping voltage for the workpiece. By monitoring the current waveform associated with the clamping voltage, it is possible to determine changes in the characteristics of the platen. Based on these changes, the temperature of the platen may be calculated.


A method may include providing a patterned feature extending from a substrate plane of a substrate, the patterned feature including a semiconductor portion and a coating in an unhardened state extending along a top region and along sidewall regions of the semiconductor portion; implanting first ions into the coating, the first ions having a first trajectory along a perpendicular to the substrate plane, wherein the first ions form a etch-hardened portion comprising a hardened state disposed along the top region; and directing a reactive etch using second ions at the coating, the second ions having a second trajectory forming a non-zero angle with respect to the perpendicular, wherein the reactive etch removes the etch-hardened portion at a first etch rate, wherein the first etch rate is less than a second etch rate when the second ions are directed in the reactive etch to the top portion in the unhardened state.


Patent
Varian, Inc | Date: 2017-01-25

A method of forming a superconductor includes exposing a layer disposed on a substrate to an oxygen ambient, and selectively annealing a portion of the layer to form a superconducting region within the layer.


Patent
Foundation University and Varian, Inc | Date: 2016-10-27

Various nanostructures, including silicon nanowires and encapsulated silicon nanoislands, and methods of making the nanostructures are provided. The methods can include providing a fin structure extending above a substrate, wherein the fin structure has at least one silicon layer and at least two silicon:germanium alloy (SiGe) layers that define sidewalls of the fin structure; and annealing the fin structure in oxygen to form a silicon nanowire assembly. The silicon nanowire assembly can include a silicon nanowire, a SiGe matrix surrounding the silicon nanowire; and a silicon oxide layer disposed on the SiGe matrix. The annealing can be, for example, at a temperature between 800 C. and 1000 C. for five minutes to sixty minutes. The silicon nanowire can have a long axis extending along the fin axis, with perpendicular first and second dimensions extending less than 50 nm along directions perpendicular to the fin axis.


Patent
Varian, Inc | Date: 2017-02-01

An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.


Patent
Varian, Inc | Date: 2015-11-16

A low profile extraction electrode assembly including an insulator having a main body, a plurality of spaced apart mounting legs extending from a first face of the main body, a plurality of spaced apart mounting legs extending from a second face of the main body opposite the first face, the plurality of spaced apart mounting legs extending from the second face offset from the plurality of spaced apart mounting legs extending from the first face in a direction orthogonal to an axis of the main body, the low profile extraction electrode assembly further comprising a ground electrode fastened to the mounting legs extending from the first face, and a suppression electrode fastened to the mounting legs extending from the second face, wherein a tracking distance between the ground electrode and the suppression electrode is greater than a focal distance between the ground electrode and the suppression electrode.


Patent
Varian, Inc | Date: 2015-11-13

A single piece ceramic platen is disclosed. This platen may be manufactured using additive manufacturing. The single piece ceramic platen may be manufactured using additive manufacturing processes. As such, the single piece ceramic platen may include a plurality of embedded features. Electrodes, cooling channels, heating elements, temperature sensors, strain gauges and back side gas channels may each be embedded in the electrode. Incorporation of cooling channels and heating elements allows the platen to operate over a wider range of temperatures. Further, these features may be disposed on a plurality of different depths following a planar or non-planar pathway. For example, the heating elements may be configured such that heating element in one region of the platen, such as an outer edge, are disposed closer to the top surface of the platen.


Patent
Varian, Inc | Date: 2016-01-14

Embodiments of the disclosure provide an apparatus and methods for localized stress modulation for overlay and substrate distortion using electron or ion implantation directly to a glass substrate. In one embodiment, a process for modifying a bulk property of a glass substrate generally includes identifying a stress pattern of a glass substrate, determining doping parameters to correct a defect (e.g., overlay error or substrate distortion) based on the stress pattern, and providing a treatment recipe to a treatment tool, wherein the treatment recipe is formulated according to the doping parameters. The process may further include performing a doping treatment process on the glass substrate using the treatment recipe to correct the overlay error or substrate distortion. In some embodiments, the treatment recipe is determined by comparing the stress pattern with a database library containing data correlating stress changes in glass substrates to various doping parameters.


Patent
Varian, Inc | Date: 2017-03-22

An apparatus for processing a melt may include a crucible configured to contain the melt, where the melt has an exposed surface that is separated from a floor of the crucible by a first distance. The apparatus may further include a submerged heater comprising a heating element and a shell disposed between the heating element and the melt, wherein the heating element does not contact the melt. The heating element may be disposed at a second distance with respect to the exposed surface of the melt that is less than the first distance.


A crystallizer for growing a crystalline sheet from a melt may include a cold block having a cold block surface that faces an exposed surface of the melt, the cold block configured to generate a cold block temperature at the cold block surface that is lower than a melt temperature of the melt at the exposed surface. The system may also include a nozzle disposed within the cold block and configured to deliver a gas jet to the exposed surface, wherein the gas jet and the cold block are interoperative to generate a process zone that removes heat from the exposed surface at a first heat removal rate that is greater than a second heat removal rate from the exposed surface in outer regions outside of the process zone.

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