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Urganch, Uzbekistan

Rudenko I.,Urgench State University | Bekchanov M.,Center for Development Research | Djanibekov U.,Center for Development Research | Lamers J.P.A.,Center for Development Research
Global and Planetary Change | Year: 2013

Since independence from the former Soviet Union in 1991, Uzbekistan is challenged to consolidate its efforts and identify and introduce suitable agricultural policies to ease the threat of advancing land, water and ecosystem deterioration. On the one hand, irrigated cotton production provides income, food and energy sources for a large part of the rural households, which accounts for about 70% of the total population. On the other hand, this sector is considered a major driver of the on-going environmental degradation. Due to this dual nature, an integrated approach is needed that allows the analyses of the cotton sector at different stages and, consequently, deriving comprehensive options for action. The findings of the economic based value chain analysis and ecologically-oriented water footprint analysis on regional level were complemented with the findings of an input-output model on national level. This combination gave an added value for better-informed decision-making to reach land, water and ecosystem sustainability, compared to the individual results of each approach. The synergy of approaches pointed at various options for actions, such as to (i) promote the shift of water use from the high water consuming agricultural sector to a less water consuming cotton processing sector, (ii) increase overall water use efficiency by expanding the highly water productive industrial sectors and concurrently decreasing sectors with inefficient water use, and (iii) reduce agricultural water use by improving irrigation and conveyance efficiencies. The findings showed that increasing water use efficiency, manufacturing products with higher value added and raising water users' awareness of the real value of water are essential for providing water security in Uzbekistan. © 2013 Elsevier B.V. Source


In this paper the unique solvability of the analog of the Tricomi problem for the third order loaded differential and integro-differential equations with parabolic-hyperbolic operators is proved. The existence of a solution is proved by the reduction to the integral equations with a shift of the second kind. We obtain necessary and sufficient conditions for the existence of a unique solution. © 2014, Baltaeva; licensee Springer. Source


Cabada A.,University of Santiago de Compostela | Urazboev G.,Urgench State University
Inverse Problems | Year: 2010

In this paper, it is shown that the solutions of the Toda lattice in Flaschka's form with a self-consistent integral-type source can be found by the inverse scattering problem for the discrete Sturm-Liouville operator. Moreover, the conditions are obtained under which the Toda lattice with an integral-type source has pure soliton solutions. The results can be used in modeling special types of electric transmission lines. © 2010 IOP Publishing Ltd. Source


Abdullaev B.I.,Urgench State University
Journal of Siberian Federal University - Mathematics and Physics | Year: 2014

In this work we study the P-measure and P-capacity in the class of m-wsh functions and prove a number of their properties. © Siberian Federal University. All rights reserved. Source


Wei J.D.,TU Braunschweig | Li S.F.,TU Braunschweig | Atamuratov A.,TU Braunschweig | Atamuratov A.,Urgench State University | And 2 more authors.
Applied Physics Letters | Year: 2010

The behavior of GaN surfaces during photoassisted Kelvin probe force microscopy is demonstrated to be strongly dependant on surface polarity. The surface photovoltage of GaN surfaces illuminated with above-band gap light is analyzed as a function of time and light intensity. Distinct differences between Ga-polar and N-polar surfaces could be identified, attributed to photoinduced chemisorption of oxygen during illumination. These differences can be used for a contactless, nondestructive, and easy-performable analysis of the polarity of GaN surfaces. © 2010 American Institute of Physics. Source

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