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Buntov E.,Ural Federal Universitymira St 19 | Zatsepin A.,Ural Federal Universitymira St 19 | Slesarev A.,Ural Federal Universitymira St 19 | Mikhailovich A.,Ural Federal Universitymira St 19 | Mikhaylov A.,Lobachevsky UniversityGagarin Ave
Physica Status Solidi (A) Applications and Materials Science | Year: 2015

SiO2 films, grown on a Si substrate and implanted with Li, Na, and K ions were studied by means of optically stimulated electron emission spectroscopy (OSEE). Interference effects of exciting light were observed in OSEE spectra. Application of original normalization technique allowed to compensate interference fringes in the experimental results. Three categories of defect states were identified and studied: intrinsic luminescent, emission-active silica defect centers, and implanted cation-related localized states. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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