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Brisbane, Australia

Gertsbakh I.B.,Ben - Gurion University of the Negev | Shpungin Y.,Sami Shamoon College of Engineering | Vaisman R.,University of Quensland
Proceedings - 2nd International Symposium on Stochastic Models in Reliability Engineering, Life Science, and Operations Management, SMRLO 2016 | Year: 2016

Network reliability is an important problem from both theoretical and practical points of view. One of the most powerful approaches for handling this problem is by using a so-called D-spectra method. We describe the D-spectra for twostate networks with binary and ternary components and give an overview of its principal combinatorial properties. In particular, we establish an important connection between the D-spectra and the number of network's failure sets of a given size. © 2016 IEEE.

Kelly P.M.,University of Quensland | Qiu D.,University of Quensland
Solid State Phenomena | Year: 2011

A minor, but crucial, modification to the original version of the TM was recently proposed in order to ensure that the model predictions were entirely consistent with those of the phenomenological theory of martensite crystallography (PTMC). In the present paper an analysis based on the principles of the Frank-Bilby equation is used to derive this modified version of the two-dimensional TM equation for the habit plane orientation from first principles. A considerably simpler and more accurate expression for the tilt rotation is also presented. Finally, a simple method for using the TM approach to calculate the shape strain, its magnitude and direction is described. The results of the predictions made with this improved version of the TM are compared with those of the original TM and with the corresponding PTMC predictions. © (2011) Trans Tech Publications.

Qiu D.,University of Quensland | Qiu D.,University of Queensland | Zhang M.X.,University of Quensland | Zhang M.X.,University of Queensland | Kelly P.,University of Quensland
Solid State Phenomena | Year: 2011

Low dimensional nanostructures, e.g. nanowires, self-assembled through heteroepitaxy, present a variety of crystallographic features that do not always follow conventional V-W or S-K growth mode. Applying Δg parallelism rules and edge-to-edge matching (E2EM) model in β-DySi2/Si and CoSi2/Si systems provides a better understanding of the natural preference of the interface orientation and the orientation relationship (OR) during heteroepitaxial growth. This may help improving the quality of nanowires through optimizing the substrate orientation. © (2011) Trans Tech Publications.

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