University LeipzigInstitute for Experimental Physics innestrasse 5

University LeipzigInstitute for Experimental Physics innestrasse 5


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Frenzel H.,University LeipzigInstitute for Experimental Physics innestrasse 5 | Dorfler T.,University LeipzigInstitute for Experimental Physics innestrasse 5 | Schlupp P.,University LeipzigInstitute for Experimental Physics innestrasse 5 | von Wenckstern H.,University LeipzigInstitute for Experimental Physics innestrasse 5 | Grundmann M.,University LeipzigInstitute for Experimental Physics innestrasse 5
Physica Status Solidi (A) Applications and Materials Science | Year: 2015

We report on the fabrication of amorphous zinc tin oxide (ZTO) thin films by long-throw magnetron sputtering on glass substrate. This method is especially appropriate for the growth of amorphous oxides at room temperature. ZTO films were deposited from single ceramic target and via co-sputtering of ZnO and SnO2 targets in inert Ar atmosphere only. Without additional annealing steps, the films showed a minimum resistivity of 2.4×10-3Omegam and a maximum resistivity of 5×102Omegam. The conductivity can be tuned via total pressure, power ratio in case of co-sputtering and the applied substrate voltage from semiconducting to insulating. Furthermore, 30nm thick ZTO films deposited at room temperature showed a mean transmittance of 90% in the visible spectral range, are X-ray amorphous, and their surface roughness is as low as 0.3nm. The application of these films is shown in the demonstration of an all amorphous oxide pn-diode. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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