Universities of Inner Mongolia Autonomous Region

Hohhot, China

Universities of Inner Mongolia Autonomous Region

Hohhot, China
SEARCH FILTERS
Time filter
Source Type

Yao D.,Tianjin University of Technology | Li W.,Tianjin University of Technology | Sun Y.,Universities of Inner Mongolia Autonomous Region | Wu H.,Universities of Inner Mongolia Autonomous Region | And 5 more authors.
Journal of Magnetism and Magnetic Materials | Year: 2016

The effect of ZnO layer thickness t on the structure, static magnetic properties and high frequency properties is systemically studied for [Fe65Co35/ZnO(t)]50 multilayer films. The gradually increasing crystallinity of ZnO layer with increasing t is observed in the XRD patterns. The VSM measurements show good soft magnetic properties are obtained in these multilayer films, even though the ZnO layer is thick (up to 3.6 nm). For the typical sample with t=3.6 nm, an obvious in-plane anisotropy field and comparatively small coercivity are achieved, and high electric resistivity up to 12.6 mΩ cm is obtained. The measurement of permeability spectra indicates that the multilayers have an invariable ferromagnetic resonance frequency fr about 4.0 GHz; however, the initial permeability μi can be adjusted from 48 to 136 by decreasing t from 3.6 nm to 1.0 nm. The phenomenon that fr is almost invariable is the result of the decreasing saturation magnetization 4πMs and the increasing dynamic anisotropy field Hk-dyn with increasing t. For our samples, the real part (μ'2G) of complex permeability at f=2.0 GHz remains a high value beyond 90, while the imaginary part (μ"2G) keeps a low value below 1.55, indicating that these multilayer films are promising for application in high frequency range. © 2015 Elsevier B.V. All rights reserved.


Ren B.,Shanghai University | Cao M.,Shanghai University | Zhang Q.,Shanghai University | Huang J.,Shanghai University | And 5 more authors.
Journal of Alloys and Compounds | Year: 2016

CdS nanowires with controllable size, orientation, and morphology were synthesized on a large scale by a solvothermal method. The mechanism for the formation of CdS nanowires evolved from CdS spherical particles can be divided into a short-period solid-solid transformation process and a long-period ripening process. Near-band-emission without distinct split phenomenon was observed in the PL spectrum of CdS nanowires at 10 K. The best fit results based on Varshni empirical equation support our assignment of FX. Temperature dependent integrated peak intensity and linewidth of FX were analyzed by means of a two-step quenching process model and well fitted by Toyozawa's theory. All fitted results including thermal activation energy, LO-phonon energy were close to that observed in bulk CdS, indicating high quality of nanomaterial but also revealing its promising applications in photonics. © 2015 Elsevier B.V.


Xu B.,Universities of Inner Mongolia Autonomous Region | Wu H.-Y.,Universities of Inner Mongolia Autonomous Region | Zhang Y.-C.,CAS Institute of Physics | Wang H.-T.,CAS Institute of Physics | Liu W.-M.,CAS Institute of Physics
Physical Review A - Atomic, Molecular, and Optical Physics | Year: 2015

A generalized double-well-basis coupled representation is proposed to investigate excitation spectra and thermodynamics of bosonic atoms in double-well optical superlattices. In the hard-core limit and with a filling factor of one, excitations describing the creation of pairs of a doubly occupied state and a simultaneous empty state, and those from a symmetric singly occupied state to an antisymmetric state are carefully analyzed and their excitation spectra are calculated within mean-field theory. Based on the hard-core statistics, the equilibrium properties such as heat capacity and particle populations are studied in detail. The cases with other filling factors are also briefly discussed. © 2015 American Physical Society.


Zhou L.,Inner Mongolia University | Xing Y.,Inner Mongolia University | Xing Y.,Universities of Inner Mongolia Autonomous Region | Wang Z.P.,Inner Mongolia University | Wang Z.P.,Universities of Inner Mongolia Autonomous Region
European Physical Journal B | Year: 2012

A variational approach is used within the framework of effective mass approximation to study the binding energy of the hydrogenic impurity in a spherical quantum dot quantum well (QDQW) structure. The electron-and ion-longitudinal-optical (LO) phonon interactions are taken into account in the calculation. The numerical results for the CdS/HgS QDQW structure embedded in an insulator matrix show that the binding energy is sensitive both to the size of the core and the width of the shell. The binding energy decreases with the core radius being increased, and exhibits a maximum with the shell width being increased. The LO phonon effect lowers the binding energy of the on-center impurity and decreases sharply with the shell well-width being increased. © EDP Sciences, Societá Italiana di Fisica, Springer-Verlag 2012.


Zhu J.,Universities of Inner Mongolia Autonomous Region | Ban S.L.,Universities of Inner Mongolia Autonomous Region | Ha S.H.,Inner Mongolia University of Technology
Modern Physics Letters B | Year: 2012

The ground state binding energies of donor impurities in strained [0001]-oriented wurtzite GaN/Al xGa 1-xN asymmetric double quantum wells are investigated using a variational method combined with numerical computation. The built-in electric field due to the spontaneous and strain-induced piezoelectric polarization and the strain modification on material parameters are taken into account. The variations of binding energies versus the width of central barrier, the ratio of two well widths, and the impurity position are presented, respectively. It is found that the built-in electric field causes a mutation of binding energies with increasing the width of central barrier to some value. The results for symmetrical double quantum wells and without the built-in electric field are also discussed for comparison. © World Scientific Publishing Company.


Qu Y.,Inner Mongolia University of Technology | Qu Y.,Universities of Inner Mongolia Autonomous Region | Ban S.L.,Inner Mongolia University of Technology | Ban S.L.,Universities of Inner Mongolia Autonomous Region
Journal of Applied Physics | Year: 2011

Based on the dielectric continuum phonon model, uniaxial model and force balance equation, the influence of an InxGa1-xN nanogroove inserted in a strained wurtzite AlN/GaN/AlN quantum well on electron mobility is studied. The results show that the optical phonon modes will be changed by the introduction of InGaN/GaN interfaces and the In component. It can be also found that the electron wave function will shift to the InGaN layer as long as the conductor band energy at GaN/InGaN interface gets lower than that at the AlN/GaN interface. Electron mobility first increases and then decreases as x increases, whereas the mobility is always greater than the case without an InGaN nanogroove when electrons mainly distribute in the GaN layer. Once most of the electrons transfers to the InGaN nanogroove, electron mobility drops sharply and then increases with the increase of x. © 2011 American Institute of Physics.


Xiao L.,Universities of Inner Mongolia Autonomous Region | Zhu J.,Universities of Inner Mongolia Autonomous Region | Ding T.,Universities of Inner Mongolia Autonomous Region | Wang Y.,Universities of Inner Mongolia Autonomous Region | And 2 more authors.
Materials Letters | Year: 2015

Abstract CuInS2 thin films incorporating with cerium have been successfully fabricated by a powder metallurgy method. X-ray diffraction and scanning electron microscope measurements showed that the as-prepared CuIn1-xCexS2 samples crystallize with chalcopyrite structure at 250 °C and the crystallinity and film compactness could be improved as annealing temperature rises. In the ultraviolet-visible-near infrared spectrum, two additional light absorption peaks were observed at 1690 nm and 1930 nm. The optical bandgaps of CuIn1-xCexS2 films decrease from 1.38 eV to 1.34 eV with increasing cerium content. These observed optical behaviors could suggest that an intermediate band forms in the forbidden band of CuInS2 semiconductor due to cerium incorporation. The position of intermediate band locates at 0.64 eV below conduction-band bottom. This kind of rare-earth doped materials enhances long-wavelength absorption, which could be helpful for high-efficiency solar cells. © 2015 Elsevier B.V.


Xia Z.,Universities of Inner Mongolia Autonomous Region | Li R.,Universities of Inner Mongolia Autonomous Region | Dong H.,Universities of Inner Mongolia Autonomous Region | Ren Y.,Universities of Inner Mongolia Autonomous Region | And 2 more authors.
2011 International Conference on Remote Sensing, Environment and Transportation Engineering, RSETE 2011 - Proceedings | Year: 2011

In this thesis,the Gd-doped CdTe films are prepareted by using the double source vacuum evaporation method,and sputtered by XPS every other 10 seconds,the whole XPS spectra of the Gd-doped CdTe film and the fine XPS spectra of every element characteristic peak are obtained.We analyzed the the films by XPS,we also did the research about the atomic concentration and combined state changes of each element in the growth of thin films. © 2011 IEEE.


Ren Y.,Universities of Inner Mongolia Autonomous Region | Li R.,Universities of Inner Mongolia Autonomous Region | Wu R.,Universities of Inner Mongolia Autonomous Region | Xia Z.,Universities of Inner Mongolia Autonomous Region | And 2 more authors.
2011 International Conference on Remote Sensing, Environment and Transportation Engineering, RSETE 2011 - Proceedings | Year: 2011

ZnSe thin films are prepared by vacuum evaporation on glass substrate and Dy-doped by double-source evaporation. Dy doping did not change the sample's crystal structure but can increase its grain size and roughness. Analysing the XPS spectrum, doping change the chemic states of the main ingredient, use this verdict with other results to study the influence by the Dy-doping. © 2011 IEEE.


Zou K.,Inner Mongolia University of Technology | Zou K.,Universities of Inner Mongolia Autonomous Region | Li R.-P.,Inner Mongolia University of Technology | Li R.-P.,Universities of Inner Mongolia Autonomous Region | And 4 more authors.
Chinese Rare Earths | Year: 2014

CdS thin films contained different thickness of Pr layer were prepared on glass substrates by using the chemical bath deposition (CBD) and vacuum electron beam evaporation method. The structure, surface morphology and photoelectric properties of the films were studied. The results show that un-doped CdS thin film is the cubic phase structure and preferentially orients in the (111) direction. It is an N type semiconductor. Pr-doping does not change the crystal structure of CdS. It is still preferentially grown along the (111) crystal direction, and the intensity of the diffraction peak increases. Furthermore, Pr-doping results in a wider band gap and an increasing of transmittance in the range of visible light. At the same time, rare earth Pr layer doped in CdS affects the electrical performances of CdS films. When doped with a lower concentration, the resistivity of the films increases, but a higher doping concentration leads to a reducing of resistivity and a change of conductivity from N to P type.

Loading Universities of Inner Mongolia Autonomous Region collaborators
Loading Universities of Inner Mongolia Autonomous Region collaborators