Monmouth Junction, NJ, United States
Monmouth Junction, NJ, United States

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Patent
United Silicon Carbide, Inc. | Date: 2017-03-01

Systems and methods for semiconductor wafer processing include irradiating a surface of a semiconductor wafer with a laser beam of sufficient energy to alter a band gap of semiconductor material thereby melting a portion of the wafer to generate a graphitic layer area. A metal layer is then depositing on the surface to create ohmic contacts at the area that where melted by the laser.


Patent
United Silicon Carbide, Inc. | Date: 2015-12-30

A hybrid semiconductor bipolar switch in which a normally-on high-voltage wide-bandgap semiconductor bipolar switch and a normally-off field effect transistor are connected in a cascode (Baliga-pair) configuration. The switch may be constructed as a stacked hybrid device where a discrete transistor is bonded on top of a bipolar switch. Power systems may use plural switches paired with anti-parallel diodes.


Patent
United Silicon Carbide, Inc. | Date: 2016-09-15

A vertical JFET made by a process using a limited number of masks. A first mask is used to form mesas and trenches in active cell and termination regions simultaneously. A maskless self-aligned process is used to form silicide source and gate contacts. A second mask is used to open windows to the contacts. A third mask is used to pattern overlay metallization. An optional fourth mask is used to pattern passivation. Optionally the channel may be doped via angled implantation, and the width of the trenches and mesas in the active cell region may be varied from those in the termination region.


Grant
Agency: Department of Energy | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 154.80K | Year: 2015

The U.S. represents the worlds leading market for electric vehicles and is producing some of the most advanced plug-in electric vehicles PEVs) available today. PEVs are gaining widespread adoption every year, where 58% of all PEV sales occurred in 2013 and it is expected that by 2023, there will be ~3.2 million PEVs on the road in the U.S. alone. To increase adoption and maintain this leadership, the EV Everywhere initiative has set the goal to make electric vehicles as affordable as gasoline vehicles by 2022. To meet the goals of the EV Everywhere initiative, the primary efforts lie in reducing costs for the batteries, PM motor and electric drive train while simultaneously reducing weight. Increasing the drive train conversion efficiency has a significant impact as it extends battery life, vehicle range and allows for a reduction of heavy cooling components through the reduction of heat generating losses. Therefore much attention is placed on increasing the efficiency of the traction power inverter that drives the electric motor. It is well documented that inverter efficiency and power density can be increased while simultaneously reducing weight through the use of Silicon Carbide SiC) wide bandgap semiconductors. For example, demonstrations of inverters utilizing SiC-JFETs and SiC-MOSFETs are emerging, where the efficiencies are reaching >99% with 10X increased power densities. However, todays electric vehicle motor drive applications require high current 200-400A) power modules. SiC devices have been limited to lower current <50A) due to the material defects, lower yields and higher costs associated with large area devices. For the electric vehicle traction inverters, it is of great interest to push up the SiC device current to 100-200A per device to make full use of the SiC system. Material defect densities have dropped dramatically in recent years as the commercial acceptance of the SiC Schottky diode have driven higher volume and more state-of-the-art semiconductor fabrication. To address topic 17b, USCi proposes in Phase I to fabricate 200A 650V SiC Schottky Diodes on 6 diameter wafers. The high current diodes will begin reliability qualifications in Phase I. The cost of manufacturing SiC diodes will be addressed in Phase I as well. In Phase II, the diodes will be co-packaged with Si switches to form hybrid modules. When integrated, the SiC diodes will increase the efficiency of electric motor power conversion from the battery to the drive train. In Phase II, the goal will be to qualify the high current diodes on the system level for automotive applications.


Grant
Agency: Department of Energy | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 154.60K | Year: 2016

In 2014, approximately ~120,000 plug-in electric vehicles (PEV’s) were sold in the US alone, representing a 23% increase from 2013 and a 128% increase from 2012 and nearly 1/3 of the PEV’s sold worldwide, making the US the largest market for PEV and HEV adoption. It is expected that by 2023, there will be ~3.2 million PEV’s on the road in the U.S. alone. The EV Everywhere initiative has set the goal to make electric vehicles as affordable as gasoline vehicles by 2022. To meet the goals of the EV Everywhere initiative, the primary efforts lie in reducing costs for the batteries, PM motor and electric drive train while simultaneously reducing weight. Increasing the drive train conversion efficiency has a significant impact as it extends battery life, vehicle range and allows for a reduction of heavy cooling components through the reduction of heat generating losses. Therefore much attention is placed on increasing the efficiency of the traction power inverter that drives the electric motor. It is well documented that inverter efficiency and power density can be increased while simultaneously reducing weight through the use of Silicon Carbide (SiC) wide bandgap semiconductors. For example, demonstrations of inverters utilizing SiC-JFETs and SiC-MOSFETs are emerging, where the efficiencies are reaching >99% with 10X increased power densities. However, today’s electric vehicle motor drive applications require high current (200-400A) power modules. SiC devices have been limited to lower current (


Grant
Agency: Department of Energy | Branch: | Program: SBIR | Phase: Phase II | Award Amount: 1.01M | Year: 2016

The U.S. represents the world’s leading market for electric vehicles and is producing some of the most advanced plugin electric vehicles (PEV’s) available today. PEV’s are gaining widespread adoption every year, where 58% of all PEV sales occurred in 2013 and it is expected that by 2023, there will be ~3.2 million PEV’s on the road in the U.S. alone. To increase adoption and maintain this leadership, the EV Everywhere initiative has set the goal to make electric vehicles as affordable as gasoline vehicles by 2022. To meet the goals of the EV Everywhere initiative, the primary efforts lie in reducing costs


Grant
Agency: National Aeronautics and Space Administration | Branch: | Program: SBIR | Phase: Phase II | Award Amount: 749.64K | Year: 2016

Radiation tolerant, extreme temperature capable electronics are needed for a variety of planned NASA missions. For example, in-situ exploration of Venus and long duration Europa-Jupiter missions will expose electronics to temperatures up to 500 ?C and radiation of 3 Mrad (Si) total dose. During this program, United Silicon Carbide will extend the capability of its SiC JFET integrated circuit (IC) fabrication technology to produce electronics compatible with such extreme environments. Silicon Carbide (SiC) junction field effect (JFET) based electronics are ideal for these environments due to their radiation tolerance and their high performance and reliability over an extremely wide operating temperature range. SiC electronics can be used in applications ranging from low power, low noise mixed signal electronics for precision actuator control, sensor interfaces, and guidance and navigation electronics to power electronics for power management and distribution and power processing units. SiC based electronics will have longer storage and operating lifetimes when compared to existing silicon electronics. Use of SiC integrated circuits will also lower system mass, volume, and power by reducing or eliminating the need for cooling and radiation shielding. In Phase I, we showed the feasibility of our approach by measuring SiC JFET IC device characteristics at 500 ?C; performing a 500 hour, 500 ?C reliability test; and using TCAD simulations to further explore the devices behavior at high temperature and when subjected to radiation. In Phase II, we will fully develop the extreme environment capable SiC IC fabrication technology and use it to fabricate an integrated circuit which will be characterized at 500 ?C and before and after radiation exposure. Following Phase II, we will provide access to the process technology and related design intellectual property through a commercial fabrication service so that NASA and others can fully leverage its capability.


Patent
United Silicon Carbide, Inc. | Date: 2015-02-10

The present invention concerns a monolithically merged trenched-and-implanted Bipolar Junction Transistor (TI-BJT) with antiparallel diode and a method of manufacturing the same. Trenches are made in a collector, base, emitter stack downto the collector. The base electrode is formed on an implanted base contact region at the bottom surface of the trench. The present invention also provides for products produced by the methods of the present invention and for apparatuses used to perform the methods of the present invention.


Patent
United Silicon Carbide, Inc. | Date: 2016-07-28

Trench JFETs may be created by etching trenches into the topside of a substrate of a first doping type to form mesas. The substrate is made up of a backside drain layer, a middle drift layer, and topside source layer. The etching goes through the source layer and partly into the drift layer. Gate regions are formed on the sides and bottoms of the trenches using doping of a second type. Vertical channel regions are formed behind the vertical gate segments via angled implantation using a doping of the first kind, providing improved threshold voltage control. Optionally the substrate may include a lightly doped channel layer between the drift and source layers, such that the mesas include a lightly doped channel region that more strongly contrasts with the implanted vertical channel regions.


Patent
United Silicon Carbide, Inc. | Date: 2016-09-09

Trench JFETs may be created by etching trenches into the topside of a substrate of a first doping type to form mesas. The substrate is made up of a backside drain layer, a middle drift layer, and topside source layer. The etching goes through the source layer and partly into the drift layer. Gate regions are formed on the sides and bottoms of the trenches using doping of a second type. Vertical channel regions are formed behind the vertical gate segments via angled implantation using a doping of the first kind, providing improved threshold voltage control. Optionally the substrate may include a lightly doped channel layer between the drift and source layers, such that the mesas include a lightly doped channel region that more strongly contrasts with the implanted vertical channel regions.

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