Hsinchu, Taiwan

United Microelectronics

www.umc.com
Hsinchu, Taiwan

United Microelectronics Corporation was founded as Taiwan's first semiconductor company in 1980 as a spin-off of the government-sponsored Industrial Technology Research Institute . Wikipedia.

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Patent
United Microelectronics | Date: 2016-12-04

The present invention provides a semiconductor structure, including a base, a patterned oxide semiconductor (OS) layer, two source/drain regions, a protective layer, a gate layer and a gate dielectric layer. The patterned OS layer is disposed on the base. Two source/drain regions are disposed on the patterned OS layer and are separated by a recess. Each source/drain region includes an inner sidewall facing the recess and an outer sidewall opposite to the inner sidewall. The protective layer is disposed on a sidewall of the patterned OS layer but is not on the inner sidewall of the source/drain region. The gate layer is disposed on the patterned OS layer, and the gate dielectric layer is disposed between the gate layer and the patterned OS layer.


Patent
United Microelectronics | Date: 2017-02-14

A semiconductor transistor device includes an oxide semiconductor layer having an active surface, a source electrode, a drain electrode, a gate electrode and a control capacitor. The gate electrode, the source electrode and the drain electrode are directly in contact with the active surface. The gate electrode is disposed between the drain electrode and the source electrode. The gate electrode, the source electrode and the drain electrode are separated from each other. The control capacitor is electrically connected to the gate electrode through a connection.


Patent
United Microelectronics | Date: 2017-01-11

A method for fabricating semiconductor device includes the steps of: providing a substrate having a gate structure thereon and an interlayer dielectric (ILD) layer surrounding the gate structure; forming a sacrificial layer on the gate structure; forming a first contact plug in the sacrificial layer and the ILD layer; removing the sacrificial layer; and forming a first dielectric layer on the gate structure and the first contact plug.


Patent
United Microelectronics | Date: 2017-01-17

An image sensor includes a semiconductor substrate, a plurality of photoelectric transducer devices, a dielectric isolating structure and a plurality of spacers. The semiconductor substrate has a backside surface and a front side surface opposite to the backside surface. The photoelectric transducer devices are disposed on the front side surface. The dielectric isolating structure extends downwards into the semiconductor substrate from the front side surface and penetrates through the backside surface, so as to from a grid structure and isolate the photoelectric transducer devices from each other. The spacers are disposed on a plurality of sidewalls of the grid structure.


Patent
United Microelectronics | Date: 2017-01-13

A method of forming a semiconductor device is provided. At least two shallow trenches are formed in a substrate. An insulating layer is formed on surfaces of the substrate and the shallow trenches. A conductive layer is formed on the substrate between the shallow trenches. At least one spacer is formed on a sidewall of the conductive layer, wherein the spacer fills up each shallow trench.


Patent
United Microelectronics | Date: 2017-01-11

A method for fabricating semiconductor device includes the steps of: providing a substrate having at least a fin-shaped structure thereon and the fin-shaped structure includes a top portion and a bottom portion; forming a gate structure on the fin-shaped structure; forming a cap layer on the top portion of the fin-shaped structure not covered by the gate structure; performing an annealing process to drive germanium from the cap layer to the top portion of the fin-shaped structure; removing the cap layer; and forming an epitaxial layer around the top portion of the fin-shaped structure.


Patent
United Microelectronics | Date: 2017-01-06

A semiconductor device includes: a substrate having a first fin-shaped structure and a second fin-shaped structure thereon, a shallow trench isolation (STI) around the first fin-shaped structure and the second fin-shaped structure, a gate isolation directly on the second fin-shaped structure, and a gate line on the STI and the first fin-shaped structure. Preferably, the gate line includes a L-shaped structure.


Patent
United Microelectronics | Date: 2017-02-22

A method for fabricating the semiconductor device is disclosed. A semiconductor substrate having a main surface is provided. A gate is formed on the main surface of the semiconductor substrate. An offset liner is formed on the sidewall of the gate. An ion implantation process is performed to form lightly doped drain (LDD) region in the semiconductor substrate. A spacer is formed on a sidewall of the gate. A cavity is recessed into the main surface of the semiconductor substrate. The cavity is adjacent to the spacer. An epitaxial layer is grown in the cavity. The spacer is then subjected to a surface treatment to form a dense oxide film on the spacer. A mask layer is deposited on the dense oxide film. The dense oxide film has a thickness that is smaller or equal to 12 angstroms.


A method of forming a non-continuous line pattern includes forming a DSA material layer on a substrate, performing a phase separation of the DSA material layer to form an ordered periodic pattern including a plurality of first polymer structures and the second polymer structures arranged alternately, forming a first mask to cover a first portion of the ordered periodic pattern, performing a first etching process to remove a portion of the first polymer structures exposed by the first mask, removing the first mask, forming a second mask to cover a second portion of the ordered periodic pattern, with an interval to the first portion of the ordered periodic pattern, performing a second etching process to remove a portion of the second polymer structures exposed by the second mask, and removing the second mask. The remaining first polymer structures and the remaining second polymer structures are not connected to each other.


Patent
United Microelectronics | Date: 2017-01-08

A semiconductor device includes a hard mask layer and a plurality of spacers. The hard mask layer is disposed on a target layer and has a first material and a second material. The spacers are disposed on the hard mask layer, wherein a first portion of the spacers is disposed on the first material, and a second portion of the spacers is disposed on the second material.

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