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Wang J.-Q.,Unionlight Technology Co. | Zhang Y.,Unionlight Technology Co. | Pei G.-Q.,Shanghai Unionlight Photoelectric Technology Co. | Zhou J.-T.,Unionlight Technology Co. | And 3 more authors.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2015

Wafers were chosen from different regions of sapphire single crystal with diameter of 320 mm grown by TSTGT method. Etched topography pictures have been characterized using molten KOH with chemical etching-metalloscope. The results show that the shapes of dislocation etch pits located in (0001) plane are typically triangle, and the dislocation boundaries have the characteristics of extension. With different etching time, temperature and surface roughness of wafer, the best condition for dislocation displaying is KOH at 400℃ for 15 min. The better surface roughness, the better displaying results of the dislocation. ©, 2015, Rengong Jingti Xuebao/Journal of Synthetic Crystals. All right reserved.


Zhang Y.,Unionlight Technology Co. | Wang J.-Q.,Unionlight Technology Co. | Wang Y.-M.,Unionlight Technology Co. | Huang X.-W.,Shanghai Unionlight Photoelectric Technology Co. | Liu Z.-P.,Unionlight Technology Co.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2012

The high quality terbium gallium garnet (Tb 3Ga 5O 12, TGG) single crystal with size of φ25 mm×40 mm was grown by three crucible Czochralski method. The crystal structure and mono-crystallinity were characterized by X-ray diffraction (XRD) and X-ray rocking curve (XRC), and the Verdet constant was measured by the Verdet constant testing device using He-Ne laser. The results showed that the as-grown TGG single crystal had a <111> orientation. The full-width half-maximum (FWHM) was 17 arc sec. The Verdet constant was 0.553 min/cm·Oe under the incident wavelength at 632.8 nm.

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