Unilite Corporation

Miaoli, Taiwan

Unilite Corporation

Miaoli, Taiwan
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Huang H.-W.,National Chiao Tung University | Huang J.-K.,National Chiao Tung University | Huang J.-K.,Unilite Corporation | Kuo S.-Y.,Chang Gung University | And 2 more authors.
Applied Physics Letters | Year: 2010

In this paper, GaN-based LEDs with a nanoscale patterned sapphire substrate (NPSS) and a SiO2 photonic quasicrystal (PQC) structure on an n-GaN layer using nanoimprint lithography are fabricated and investigated. The light output power of LED with a NPSS and a SiO2 PQC structure on an n-GaN layer was 48% greater than that of conventional LED. Strong enhancement in output power is attributed to better epitaxial quality and higher reflectance resulted from NPSS and PQC structures. Transmission electron microscopy images reveal that threading dislocations are blocked or bended in the vicinities of NPSS layer. These results provide promising potential to increase output power for commercial light emitting devices. © 2010 American Institute of Physics.


Huang H.W.,National Chiao Tung University | Huang J.K.,National Chiao Tung University | Lin C.H.,Unilite Corporation | Lee K.Y.,Unilite Corporation | And 3 more authors.
IEEE Electron Device Letters | Year: 2010

The enhancement of light extraction from GaN-based light-emitting diodes (LEDs) with a patterned sapphire substrate (PSS) and a SiO2 12-fold photonic quasi-crystal (PQC) structure using nanoimprint lithography is presented. At a driving current of 20 mA on transistor-outline-can package, the light output powers of LED with a PSS and LED with a PSS and a SiO2 PQC structure are enhanced by 35% and 48%, compared with the conventional LED. In addition, the higher output power of the LED with a PSS and a SiO2 PQC structure is due to better reflectance on PSS and higher epitaxial quality on an n-GaN using a SiO2 12-fold PQC structure pattern. These results provide promising potential to increase output powers of commercial light-emitting devices. © 2006 IEEE.


Huang H.W.,National Chiao Tung University | Huang H.W.,Unilite Corporation | Lai F.-I.,Yuan Ze University | Kuo S.Y.,Chang Gung University | And 3 more authors.
Solid-State Electronics | Year: 2011

GaN-based LEDs with photonic crystal (PhC) patterns on an n-and a p-GaN layer by nano-imprint lithography (NIL) are fabricated and investigated. At a driving current of 20 mA on Transistor Outline (TO)-can package, the light output power of the GaN-based LED with PhC patterns on an n-and a p-GaN layer is enhanced by a factor of 1.30, and the wall-plug efficiency is increased by 24%. In addition, the higher output power of the LED with PhC patterns on the n-and p-GaN layer is due to better crystal quality on n-GaN and higher scattering effect on p-GaN surface using PhC pattern structure. © 2010 Elsevier Ltd. All rights reserved.

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