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Villebon-sur-Yvette, France

Taktak F.T.,UMS
3rd EAGE/AAPG Workshop on Tight Reservoirs in the Middle East | Year: 2015

The main goal is to present a comprehensive sedimentary and structural architecture for the Gulf of Gabes Basin-GGB-during the Eocene time period, using a detailed interpretation of a near 2000-km line of migrated and multi-channel seismic reflection profiles acquired by the Compagnie Generale de Geophysique-CGG-in the period 1978-1995, to reconstitute the environments of deposition of largescale sedimentary systems and structural elements which can be mapped in the studied basin, to those in the central and central-east provinces of Tunisia in the west. Furthermore, the geodynamic and depositional environment controls on the petroleum potential of Eocene series in the study area are also envisaged. Source

Cheron J.,University of Limoges | Campovecchio M.,University of Limoges | Barataud D.,University of Limoges | Reveyrand T.,University of Limoges | And 3 more authors.
International Journal of Microwave and Wireless Technologies | Year: 2012

The electrical modeling of power packages is a major issue for designers of high-efficiency hybrid power amplifiers. This paper reports the synthesis and the modeling of a packaged Gallium nitride (GaN) High electron mobility transistor (HEMT) associating a nonlinear model of the GaN HEMT die with an equivalent circuit model of the package. The extraction procedure is based on multi-bias S-parameter measurements of both packaged and unpackaged (on-wafer) configurations. Two different designs of 20 W packaged GaN HEMTs illustrate the modeling approach that is validated by time-domain load-pull measurements in S-band. The advantage of the electrical modeling dedicated to packaged GaN HEMTs is to enable a die-package co-design for power matching. Internal matching elements such as Metal oxide semiconductor (MOS) capacitors, Monolithic microwave integrated circuits (MMICs), and bond wires can be separately modeled to ensure an efficient optimization of the package for high power Radio frequency (RF) applications. © Copyright 2012 Cambridge University Press and the European Microwave Association. Source

Lazar O.,CNRS Laboratory for Analysis and Architecture of Systems | Tartarin J.G.,CNRS Laboratory for Analysis and Architecture of Systems | Lambert B.,UMS | Moreau C.,Directorate General of Armaments | And 2 more authors.
2015 IEEE MTT-S International Microwave Symposium, IMS 2015 | Year: 2015

This paper proposes a diagnostic tool dedicated to the analysis of the Schottky Barrier Height (SBH). The proposed method is mainly relevant for studying gate related failure mechanisms in electronic devices. In this case, the SBH of gallium nitride High Electron Mobility Transistors (HEMTs) is investigated in terms of mean SBH's value and dispersion. It is shown that according to given temperature and gate current ranges, linear relationships can be extracted between the mean SBH and the inhomogeneities that appear in forward-biased diode. These behaviors are able to highlight different kind of defects, revealing possible weaknesses of the devices. © 2015 IEEE. Source

Nallatamby J.-C.,R.A.U.M. | Abdelhadi K.,R.A.U.M. | Jacquet J.-C.,III V Laboratory | Prigent M.,R.A.U.M. | And 3 more authors.
Solid-State Electronics | Year: 2013

Commercially available simulators present considerable advantages in performing accurate DC, AC and transient simulations of semiconductor devices, including many fundamental and parasitic effects which are not generally taken into account in house-made simulators. Nevertheless, while the TCAD simulators of the public domain we have tested give accurate results for the simulation of diffusion noise, none of the tested simulators perform trap-assisted GR noise accurately. In order to overcome the aforementioned problem we propose a robust solution to accurately simulate GR noise due to traps. It is based on numerical processing of the output data of one of the simulators available in the public-domain, namely SENTAURUS (from Synopsys). We have linked together, through a dedicated Data Access Component (DAC), the deterministic output data available from SENTAURUS and a powerful, customizable post-processing tool developed on the mathematical SCILAB software package. Thus, robust simulations of GR noise in semiconductor devices can be performed by using GR Langevin sources associated to the scalar Green functions responses of the device. Our method takes advantage of the accuracy of the deterministic simulations of electronic devices obtained with SENTAURUS. A Comparison between 2-D simulations and measurements of low frequency noise on InGaP-GaAs heterojunctions, at low as well as high injection levels, demonstrates the validity of the proposed simulation tool. © 2012 Elsevier Ltd. All rights reserved. Source

Cheron J.,University of Limoges | Campovecchio M.,University of Limoges | Barataud D.,University of Limoges | Reveyrand T.,University of Limoges | And 3 more authors.
IEEE MTT-S International Microwave Symposium Digest | Year: 2012

This paper presents an internally-matched packaged GaN HEMT for achieving not only high-efficiency and high-power performances but also wide bandwidth and insensitivity to harmonic terminations in S-band. The internal matching circuits of the optimized package enable to reach a wider bandwidth and to confine the harmonic impedances seen by the internal GaN powerbar into high-efficiency regions whatever the external impedances presented to the package. In a 50 environment, the packaged GaN HEMT delivers 45 W output power with more than 55% PAE from 2.9 to 3.7 GHz (24% relative bandwidth). By optimizing source and load impedances at the 1 st-harmonic, the packaged GaN HEMT demonstrates 50 W output power with more than 60% PAE over 21% bandwidth. © 2012 IEEE. Source

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