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Kawasaki, Japan

The recent applications of argon gas cluster ion beam (GCIB) for X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS) are briey reviewed. Depth prôling of organic materials has been one of the most notable challenges in conventional XPS and TOF-SIMS. Recently, it is getting widely accepted that GCIB has enabled us to obtain the depth prôles of organic materials. GCIB has unique sputtering characteristics, such as extremely low chemical damage, high sputtering yield and surface smoothing capability. These superior characteristics facilitate diverse applications of XPS and TOF-SIMS, increasing the analysis of organic devices and advanced polymers. In this review, the recent applications of GCIB are discussed, focusing on the organic ̂lm depth prôling and the surface cleaning ešect. Source


Miyayama T.,ULVAC PHI Inc.
Journal of the Vacuum Society of Japan | Year: 2016

Argon Gas Cluster Ion Beam (Ar-GCIB) is now widely spread in the field of practical surface analysis, such as X-ray photoelectron spectroscopy (XPS) and Time-of-Flight secondary ion mass spectrometry (TOF-SIMS), because of its unique sputtering effect of low chemical degradation for organic materials. GCIB provides the lateral sputtering effect and the high sputtering yield of which are never achieved by monotonic Ar ion beam on organic materials, so that the low chemical degradation of organic materials with high depth resolution and high sputtering rate could be achieved. Of course, a study of the GCIB sputtering phenomena with chemically reactive gasses, instead of Ar gas, for the advanced materials is one of the interesting things from an academic point of view. But the Ar-GCIB technique is expected to use for more practical applications, especially in the industrial field. In this paper, some practical applications of Ar-GCIB with recent XPS and TOF-SIMS instruments will be briefly introduced. Source


Sanada N.,ULVAC PHI Inc.
Zairyo to Kankyo/ Corrosion Engineering | Year: 2015

Auger Electron Spectroscopy (AES), X-ray Photoelectron Spectroscopy (XPS), and Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) are surface analysis techniques which provide atomic- and molecular-level surface chemical information. They are widely used for failure analysis, quality control, and research and development of advanced materials and devices. In this review, we overview the recent progress of the commercial apparatus, and also highlight their improved sensitivity and depth profiling capabilities. We also introduce their recent application in corrosion science. Source


Shard A.G.,National Physical Laboratory United Kingdom | Havelund R.,National Physical Laboratory United Kingdom | Seah M.P.,National Physical Laboratory United Kingdom | Spencer S.J.,National Physical Laboratory United Kingdom | And 7 more authors.
Analytical Chemistry | Year: 2012

The depth profiling of organic materials with argon cluster ion sputtering has recently become widely available with several manufacturers of surface analytical instrumentation producing sources suitable for surface analysis. In this work, we assess the performance of argon cluster sources in an interlaboratory study under the auspices of VAMAS (Versailles Project on Advanced Materials and Standards). The results are compared to a previous study that focused on C 60 q+ cluster sources using similar reference materials. Four laboratories participated using time-of-flight secondary-ion mass spectrometry for analysis, three of them using argon cluster sputtering sources and one using a C 60 + cluster source. The samples used for the study were organic multilayer reference materials consisting of a ∼400-nm-thick Irganox 1010 matrix with ∼1 nm marker layers of Irganox 3114 at depths of ∼50, 100, 200, and 300 nm. In accordance with a previous report, argon cluster sputtering is shown to provide effectively constant sputtering yields through these reference materials. The work additionally demonstrates that molecular secondary ions may be used to monitor the depth profile and depth resolutions approaching a full width at half maximum (fwhm) of 5 nm can be achieved. The participants employed energies of 2.5 and 5 keV for the argon clusters, and both the sputtering yields and depth resolutions are similar to those extrapolated from C 60 + cluster sputtering data. In contrast to C 60 + cluster sputtering, however, a negligible variation in sputtering yield with depth was observed and the repeatability of the sputtering yields obtained by two participants was better than 1%. We observe that, with argon cluster sputtering, the position of the marker layers may change by up to 3 nm, depending on which secondary ion is used to monitor the material in these layers, which is an effect not previously visible with C 60 + cluster sputtering. We also note that electron irradiation, used for charge compensation, can induce molecular damage to areas of the reference samples well beyond the analyzed region that significantly affects molecular secondary-ion intensities in the initial stages of a depth profile in these materials. © 2012 American Chemical Society. Source


Patent
Ulvac Inc. and Ulvac Phi Inc. | Date: 2010-10-19

The object of the present invention is to analyze a functional organic compound with high accuracy. In the present invention, cluster ions are accelerated so that the kinetic energy of cluster ions is less than 3.1 eV per one atom that makes up the cluster ion and the cluster ions enter a sample. Since the functional organic compound in the sample is etched without the breakdown of the chemical structure, the functional organic compound, which has not been chemically denatured, is exposed on the surface of the sample. By alternately performing the etching and the surface analysis of the sample, or performing the surface analysis of the sample while performing the etching, the sample can be accurately analyzed in the depth direction.

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