ULVAC Inc.

Tsukuba, Japan

ULVAC Inc.

Tsukuba, Japan

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A method of manufacturing a multi-layered film of the invention includes: forming an electroconductive layer (3) on a substrate (2, 31); forming a seed layer (4) including an oxidative product having a perovskite structure so as to coat the electroconductive layer (3) by a sputtering method; and forming a dielectric layer (5) so as to coat the seed layer (4).


Patent
ULVAC Inc. | Date: 2017-02-01

There is provided a film forming apparatus in which, when film is formed continuously in a predetermined pattern on one surface of a base material by feeding a film forming material beyond a mask while a sheet-like base material is caused to travel at a predetermined speed, a portion of the sheet-like base material and a portion of the sheet-like transcription substrate can be aligned at a high accuracy, and in which the cost for the apparatus and the running cost can further be reduced. On condition that a direction from the film forming means (9) toward the sheet-like base material (Sw) is defined to be an upside, the mask material traveling means (4) has: a parallel travel region forming unit (42a, 42b) which causes a portion (Sm1) of the sheet-like mask material (Sm) to travel in parallel with, and at a predetermined vertical clearance with, a portion Sm1 of the sheet-like mask material (Sm), relative to a portion Sw1 of the sheet-like base material to be caused to travel in one direction; and a driving unit (42d, DM2) which causes the sheet-like mask material to travel in synchronization with the sheet-like base material. The parallel travel region forming unit and the driving unit are disposed on a single rack (41).


A multi-layered film includes a first electroconductive layer, a dielectric layer, and a second electroconductive layer, which are sequentially layered and disposed on a main surface of a substrate. A lower surface of the dielectric layer comes into contact with an upper surface of the first electroconductive layer, an upper surface and an side surface of the dielectric layer is coated with the second electroconductive layer, and an side end of a portion at which the first electroconductive layer directly overlaps the second electroconductive layer is located inside a side end of the substrate on the main surface of the substrate.


Patent
ULVAC Inc. | Date: 2016-12-22

The present invention provides a technology for preventing the generation of a pyrochlore phase, which is an impurity phase, in forming a PZT thin film by sputtering, without using a conventional seed layer. The present invention provides a PZT thin film laminate including: a Si substrate 10; a TiO_(x )layer 4 serving as a platinum-adhesion layer on the Si substrate 10; a Pt electrode layer 5 on the TiO_(x )layer 4; a Ti thin film layer 6 on the Pt electrode layer 5; and a PZT thin film layer 7 on the Ti thin film layer 6. The Ti thin film layer 6 can have a thickness of 1 nm or more and 10 nm or less.


Patent
ULVAC Inc. | Date: 2017-04-26

A multi-layered film includes an electroconductive layer made of platinum (Pt), a seed layer including lanthanum (La), nickel (Ni), and oxygen (O), and a dielectric layer being preferentially oriented in a c-axis direction, which are at least sequentially disposed on a main surface of a substrate made of silicon.


Patent
ULVAC Inc. | Date: 2017-04-26

A method of manufacturing a multi-layered film at least includes: a step A of forming an electroconductive layer on a substrate; a step B of forming a seed layer so as to coat the electroconductive layer; and a step C of forming a dielectric layer so as to coat the seed layer. In the step B, a compound including strontium (Sr), ruthenium (Ru), and oxygen (O) is formed as the seed layer by a sputtering method. In the step C, where a substrate temperature is defined by Td when the dielectric layer is formed, 560CTd720C is determined.


The present invention provides a technology for preventing the generation of a pyrochlore phase, which is an impurity phase, in forming a PZT thin film by sputtering, without using a conventional seed layer. The present invention provides a PZT thin film laminate including: a Si substrate 10; a TiOx layer 4 serving as a platinum-adhesion layer on the Si substrate 10; a Pt electrode layer 5 on the TiOx layer 4; a Ti thin film layer 6 on the Pt electrode layer 5; and a PZT thin film layer 7 on the Ti thin film layer 6. The Ti thin film layer 6 can have a thickness of 1 nm or more and 10 nm or less.


A multi-layered film includes a first electroconductive layer, a dielectric layer, and a second electroconductive layer, which are sequentially layered and disposed on a main surface of a substrate. A lower surface of the dielectric layer comes into contact with an upper surface of the first electroconductive layer, an upper surface and an side surface of the dielectric layer is coated with the second electroconductive layer, and an side end of a portion at which the first electroconductive layer directly overlaps the second electroconductive layer is located inside a side end of the substrate on the main surface of the substrate.


Patent
Ulvac Inc. | Date: 2015-06-11

A multi-layered film includes an electroconductive layer made of platinum (Pt), a seed layer including lanthanum (La), nickel (Ni), and oxygen (O), and a dielectric layer being preferentially oriented in a c-axis direction, which are at least sequentially disposed on a main surface of a substrate made of silicon.


Patent
ULVAC Inc. | Date: 2017-08-02

There is provided a sputtering apparatus which is capable of forming, with good uniformity of film thickness distribution, an insulator film having further improved crystallinity. Inside a vacuum chamber 1 in which is provided an insulator target 4, there is disposed a stage 2 for holding a substrate W to be processed so as to face the insulator target. The sputtering apparatus has: a driving means 3 for driving to rotate the stage; a sputtering power source E1 for applying HF power to the insulator target; and a gas introduction means 13, 14 for introducing a rage gas into the vacuum chamber. The sputtering apparatus is characterized in that a distance d3 between the substrate and the insulator target is set to a range between 40 mm - 150 mm.

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