Ulvac Inc. | Date: 2015-03-27
A method for etching a substrate with plasma, including: holding a substrate on a substrate stage; forming an annular zero magnetic field region lying along a circumferential direction of an inner side of a middle-stage coil of three stages of concentrically-arranged magnetic field coils; supplying-etching gas to an interior of a chamber main body; supplying high frequency power to a high-frequency antenna and an electrode to form an induced electric field in the zero magnetic field region to generate plasma; and etching the substrate with the plasma. Forming an annular zero magnetic field region includes forming the region in a state in which the chamber main body is internally inserted from an inner side of a lowermost stage coil of the magnetic field coils to the inner side of the middle-stage coil so that the zero magnetic field region is formed near an inner surface of the top part.
Ulvac Inc. | Date: 2015-08-24
Positive ions that fly within an ion acceleration tube are accelerated by a plurality of acceleration electrodes arranged within the ion acceleration tube and are irradiated to an irradiation target. A plurality of magnet devices is arranged within the ion acceleration tube; the directions of the lines of magnetic force formed respectively by the magnet devices are made to differ between the adjacent magnet devices by an angle of more than 0 degree and at most 90 degrees or less; and each of the lines of magnetic force is rotated in one direction within the ion acceleration tube. Electrons travelling in reverse within the ion acceleration tube are made to intersect the lines of magnetic force, and made to increase a distance from a flying axis while traveling in reverse. Since the electrons collide with members within the ion acceleration tube and stop before having high energy, high-energy X-rays are not generated.
Ulvac Inc. | Date: 2014-06-17
Ulvac Inc. | Date: 2015-11-12
A catalytic chemical vapor deposition apparatus comprising a catalyst wire including a tantalum wire and a boride layer formed on a surface of the tantalum wire is used. The boride of the metal tantalum (tantalum boride) is harder than the metal tantalum. Therefore, by using the tantalum wire having the boride layer formed on the surface thereof as a catalyst wire, it is possible to reduce thermal expansion of the catalyst wire, improve mechanical strength, and prolong the service life. Further, by performing energization heating of the catalyst wire by continuous energization, it is further possible to prolong the service life of the catalyst wire.
ULVAC Inc. | Date: 2014-02-11
A vacuum processing device and a vacuum processing method that strongly chuck and hold an insulating substrate when plasma processing is performed are provided. The vacuum processing device includes a vacuum chamber that is grounded; a vacuum evacuation device connected to the vacuum chamber; a chuck device arranged inside the vacuum chamber; a chuck power supply for applying an output voltage to a single-pole type electrode provided in the chuck device; a plasma generation gas introduction device for introducing a plasma generation gas into the vacuum chamber; and a plasma generation portion which converts the plasma generation gas into plasma. An object to be processed is arranged on the chuck device; and the chuck power supply applies an output voltage to the single-pole type electrode while the plasma is being generated inside the vacuum chamber; and the object to be processed is processed by the plasma while the object to be processed is being chucked by the chuck device. An insulating substrate is used as the object to be processed and the chuck power supply applies the output voltage that periodically changes between a positive voltage and a negative voltage to the single-pole type electrode.